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Philips
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Part No. |
BF245A BF245B BF245C
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OCR Text |
silicon field-effect transistors
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30
...gate-source input must be protected against static discharge during transport or handling. QUICK REF... |
Description |
N-channel silicon field-effect transistors
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File Size |
63.45K /
11 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M68731H 68731H
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OCR Text |
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
300.2 26.60.2 21.20.2
Dimensions in mm
BLOCK DI...GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (... |
Description |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER 150-175MHz 7W FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER / 150-175MHz / 7W / FM PORTABLE RADIO
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File Size |
27.49K /
3 Page |
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Shenzhen Winsemi Microelectronics Co., Ltd
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Part No. |
WFF830
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OCR Text |
...830 830 830 830 rev.a nov .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 4.5a,500v,r ds(on)( max 1.5 )@v gs =10v ultra-low gate charge(typical 32nc) fast switching capa... |
Description |
Silicon N-Channel MOSFET
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File Size |
582.12K /
7 Page |
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TOSHIBA
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Part No. |
TPN7R506NH
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OCR Text |
silicon n-channel mos (u-mos -h) tpn7r506nh tpn7r506nh tpn7r506nh tpn7r506nh start of commercial production 2013-01 1. 1. 1. 1. applica...gate charge: q sw = 9.2 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 6.0 m ? (typ.) (... |
Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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File Size |
237.68K /
9 Page |
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it Online |
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Price and Availability
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