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Winsemi
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Part No. |
WFU1n60
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OCR Text |
n60 n60 n60 n60 rev.a dec .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 1.3a,600v,r ds(on) (max 8.5 ? )@v gs =10v ? ultra-low gate charge(typical 9.1nc) ? fast switching... |
Description |
Silicon N-Channel MOSFET
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File Size |
576.62K /
7 Page |
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it Online |
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Shenzhen Winsemi Microelectronics Co., Ltd
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Part No. |
WFU1n60
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OCR Text |
n60 n60 n60 n60 rev.a dec .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 1.3a,600v,r ds(on) (max 8.5 ? )@v gs =10v ? ultra-low gate charge(typical 9.1nc) ? fast switching... |
Description |
Silicon N-Channel MOSFET
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File Size |
517.89K /
7 Page |
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it Online |
Download Datasheet
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DinTek Semiconductor Co,.Ltd
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Part No. |
DTL2n60 DTL2n6013 DTP2n60 DTU2n60
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OCR Text |
... exemptions may apply dtl 2 n60/dtp 2 n60/dtu 2 n60 www.din-tek.jp
2 note a. w hen mounted on 1" square pcb (fr-4 or g-10 material). notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. ... |
Description |
Power MOSFET Available in Tape and Reel
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File Size |
3,380.91K /
11 Page |
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it Online |
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Tuofeng
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Part No. |
SSS5n60
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OCR Text |
...et mosfet description the sss5 n60 is a high voltage mosfet and is designed to have better characteristics , such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power... |
Description |
N-CHANNEL MOSFET
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File Size |
508.05K /
5 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SWP12n60 SWF12n60 SW12n60
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OCR Text |
n60 n60 features high ruggedness r ds(on) (max 0.7 ? )@v gs =10v gate charge (typ 58nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of sa... |
Description |
N-channel MOSFET
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File Size |
929.73K /
7 Page |
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it Online |
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IXYS[IXYS Corporation]
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Part No. |
IXFH20n60 IXFM20n60 IXFH15n60 IXFM15n60
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OCR Text |
n60 IXFH/IXFM 20 n60 600 V 600 V
ID25 15 A 20 A
RDS(on) 0.50 W 0.35 W
trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Cont... |
Description |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.35惟??娌??澧?己??HiPerFET???MOSFET)
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File Size |
80.93K /
4 Page |
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it Online |
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Price and Availability
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