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KS923C2 SD200 11171 6116A SD200 1EEJP SAMPLE SK110
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For adoption Found Datasheets File :: 32+       Page :: | <1> | 2 | 3 | 4 |   

    2SA1593S-TL-E 2SA1593T-E 2SA1593T-TL-E 2SA1593S-E 2SC4135 2SC4135S-E EN2511B

ON Semiconductor
Part No. 2SA1593S-TL-E 2SA1593T-E 2SA1593T-TL-E 2SA1593S-E 2SC4135 2SC4135S-E EN2511B
Description Bipolar Transistor adoption of FBET, MBIT processes

File Size 387.09K  /  9 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4695
Description adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].

File Size 205.83K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4601
Description Surface mount type device making the following possible. adoption of MBIT process.

File Size 167.68K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4104
Description High fT. Small reverse transfer capacitance. adoption of FBET process.

File Size 96.32K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4413
Description adoption of FBET process. Low collector-to-emitter saturation voltage.

File Size 60.00K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1580
Description High fT. Small reverse transfer capacitance. adoption of FBET process.

File Size 68.92K  /  1 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1415
Description adoption of FBET Process High Breakdown Voltage (VCEO = 160V)

File Size 469.60K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1729
Description adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.

File Size 525.17K  /  3 Page

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    TY Semiconductor Co., L...
Part No. 2SB1121
Description adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.

File Size 110.46K  /  2 Page

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    TY Semiconductor Co., L...
Part No. 2SA1434
Description adoption of FBET process. High DC current gain (hFE=500 to 1200).

File Size 66.61K  /  1 Page

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