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  800v 0.5a Datasheet PDF File

For 800v 0.5a Found Datasheets File :: 1986    Search Time::1.906ms    
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    2SC5003

SANKEN[Sanken electric]
Part No. 2SC5003
OCR Text ...ditions VCB=1200V VCB=1500V VCE=800v IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=-0.5a VCB=10V, f=1MHz 0.80.2 15.60.2 23.00.3 9.50.2 Equivalent circuit B C ( 50 ) E Silicon NPN Tr...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ...fT ton tstg tf Conditions VCB = 800v, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5a, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = - 0.6A, VCC = 200V 8 1.5...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...fT ton tstg tf Conditions VCB = 800v, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 0.5a, f = 1MHz IC = 4A, IB1 = 0.8A, IB2 = -1.6A, ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

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    D2SB80

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. D2SB80
OCR Text 800v 1.5A FEATURES OUTLINE DIMENSIONS Case : 2S Unit : mm *oeSingle In-Line Package Thin *oe High IFSM *oe Applicable to Automatic ...0.75A, Pulse measurement,Rating of per diode Forward Voltage F Max.1.05 V IR V =V , Pulse measuremen...
Description General Purpose Rectifiers(800v 1.5A)

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    G2SB20 G2SB60 G2SB80

VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
Part No. G2SB20 G2SB60 G2SB80
OCR Text ...20.7) Reverse Voltage 200 to 800v Forward Current 1.5A Features 0.421 (10.7) 0.411 (10.4) 0.080 (2.03) 0.060 (1.50) 0.095 (2.41) 0.080 (2.03) 0.098 (2.5) 0.075 (1.9) 0.043 (1.1) 0.035 (0.9) 0.210 (5.3) 0.190 (4.8) 0.040 (1.02) ...
Description Glass Passivated Single-Phase Bridge Rectifier, Forward Current 1.5A
Glass Passivated Single-Phase Bridge Rectifier 玻璃钝化单相桥式整流

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    MA2830

Shindengen Electric Manufacturing Company, Ltd.
Shindengen Electric Mfg.Co.Ltd
Part No. MA2830
OCR Text ...=0.6A, ,,IB Junction to Case VR=800v,+,IF=0.6A,-,+ IC=1.5A, IB=0.3A, +, - 1326 816 D1 Driving Saturation Voltage MAX 1.0 MAX 1.0 MAX 2.26 MAX 2.26 MAX 10 MAX 10 MAX 1.7 MAX 1.7 MIN 1.7 MIN 1.7 MAX 2.3 MAX 2.3 Copyright & ...
Description IND, HIGH-POWER DENSITY, HIGH EFFICIENCY, SHIELDED
Power Switching Regulators

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 350W 300W 250W 200W 150W 100W 50W 0W 25C 60A 50A IC, COLLECTOR CURRENT 50...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

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    2SC4557

SANKEN[Sanken electric]
Part No. 2SC4557
OCR Text ... VBE(sat) fT COB Conditions VCB=800v VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=-1A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 Unit A 23.00.3 V 9....
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

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    APT8058HVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8058HVR
OCR Text 800v 13.5A 0.580 POWER MOS V (R) TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. P...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800v 13.5A 0.580 Ohm

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    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text 800v 11.5A 0.650 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power ...
Description POWER MOS V 800v 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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For 800v 0.5a Found Datasheets File :: 1986    Search Time::1.906ms    
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