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  128k x 4-bit bicmos static ram Datasheet PDF File

For 128k x 4-bit bicmos static ram Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Toshiba
Part No. TC55B8128J
Description 128k x 4-bit bicmos static ram

File Size 231.10K  /  6 Page

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    CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV25LL-55BAI CY62137CV25LL-55BVI CY62137CV25LL-70BAI CY62137CV25LL-70BVI CY62137CV30 CY62137CV30LL-55BAI CY62137CV30LL-55BVI CY62137CV30LL-70BAI CY62137CV30LL-70BVI CY62137CV33 CY62137CV33LL-55BAI CY62137CV33LL-55BVI CY62137CV33LL-70BAI CY62137CV33LL-70BVI CY62137CVLL-70BAI CY62137CVLL-70BVI CY62137CVSL-70BAI
Description Very high speed: 55 ns and 70 ns
(CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128k x 16) static ram
32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85
2M (128k x 16) static ram 128k x 16 STANDARD Sram, 55 ns, PBGA48
2M (128k x 16) static ram 128k x 16 STANDARD Sram, 70 ns, PBGA48

File Size 225.88K  /  13 Page

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    UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431000AGU-A10-9JH UPD431000AGU-A12-9JH UPD431000AGU-A12-9KH UPD431000AGU-

NEC
Part No. UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431000AGU-A10-9JH UPD431000AGU-A12-9JH UPD431000AGU-A12-9KH UPD431000AGU-B12-9KH UPD431000AGU-A10-9KH UPD431000AGU-B15-9KH UPD431000AGW-A12 UPD431000AGZ-B12-KJH UPD431000AGZ-A10-KJH UPD431000AGZ-A10-KKH UPD431000AGZ-A12-KKH UPD431000AGZ-A12-KJH UPD431000AGZ-B12-KKH UPD431000AGZ-B10-KKH
Description 1M-bit (128k-word by 8-bit) CMOS static ram, 70ns
1M-bit (128k-word by 8-bit) CMOS static ram, 100ns
1M-bit (128k-word by 8-bit) CMOS static ram, 120ns
1M-bit (128k-word by 8-bit) CMOS static ram, 150ns

File Size 250.25K  /  32 Page

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    K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R1008C1C-J12 K6R1008C1C-J15 K6R1008C1C-T10 K6R1008C1C-T12 K6R1008C1C-T15 K6R1008C1C-P15 K6R1008C1C-L10 K6R1008C1C-L12 K6R1008C1C-L15 K6R1008C1C-P10 K6R1008C1C-P12 K6R1008C1C-JC15 K6R1008C1C-JI12 K6R1008C1C-JI10 K6R1008C1C-JC12
Description 128k x 8 high speed static ram, 5V operating, 12ns
128kx8 Bit High-Speed CMOS static ram(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128kx8位高速CMOS静态ramV的工作)。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128k x 8 high speed static ram, 5V operating, 15ns
128k x 8 high speed static ram, 5V operating, 10ns

File Size 130.06K  /  9 Page

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    Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
Part No. CY7C1019CV33 CY7C1019CV33-12VI CY7C1019CV33-15VC CY7C1019CV33-8VI CY7C1019CV33-10VC CY7C1019CV33-10VI CY7C1019CV33-10ZC CY7C1019CV33-10ZI CY7C1019CV33-12VC CY7C1019CV33-12ZC CY7C1019CV33-12ZI CY7C1019CV33-15VI CY7C1019CV33-15ZC CY7C1019CV33-15ZI CY7C1019CV33-8VC
Description 128k x 8 static ram 128k的8静态ram
JT 26C 26#20 SKT RECP 128k x 8 STANDARD Sram, 8 ns, PDSO32
128k x 8 static ram 128k x 8 STANDARD Sram, 12 ns, PDSO32
128k x 8 static ram 128k x 8 STANDARD Sram, 15 ns, PDSO32
128k x 8 static ram 128k x 8 STANDARD Sram, 10 ns, PDSO32
128k x 8 static ram 128k x 8 STANDARD Sram, 8 ns, PDSO32
Memory : Async Srams

File Size 192.46K  /  8 Page

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    MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
Part No. MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R MCM63P818TQ100R MCM63P818ZP100R MCM63P818ZP66 MCM63P818ZP66R
Description Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128k x 36 and 256K x 18 Bit Pipelined Burstram Synchronous Fast static ram 256K x 18 CACHE Sram, 5 ns, PQFP100
128k x 36 and 256K x 18 Bit Pipelined Burstram Synchronous Fast static ram 128k x 36 CACHE Sram, 4 ns, PBGA119
128k x 36 and 256K x 18 Bit Pipelined Burstram Synchronous Fast static ram 128k x 36 CACHE Sram, 5 ns, PQFP100
Replaced by PTH12000W :

File Size 320.35K  /  20 Page

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    UPD431000A-XXX UPD431000AGZ-85L-KJH UPD431000ACZ-XXX

NEC
Part No. UPD431000A-xxx UPD431000AGZ-85L-KJH UPD431000ACZ-xxx
Description 1M-BIT CMOS static ram 128k-WORD BY 8-BIT
128k x 8 STANDARD Sram, 85 ns, PDSO32

File Size 229.19K  /  32 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008C2C-GB55 K6T1008C2C-GF70 K6T1008C2C-GL70 K6T1008C2C-GP70 K6T1008C2C-GL55 K6T1008C2C-GB70 K6T1008C2C-TF70 K6T1008C2C-TB55 K6T1008C2C-TB70 K6T1008C2C-RF70 K6T1008C2C-P K6T1008C2C-B K6T1008C2C-F K6T1008C2C-DL70 K6T1008C2C-DL55 K6T1008C2C-DB70 K6T1008C2C-DB55 K6T1008C2C-L K6T1008C2C-NF700
Description 128k x 8 STANDARD Sram, 70 ns, PDSO32
128k x8 bit Low Power CMOS static ram 128kx8位低功CMOS静态ram
128k x8 bit Low Power CMOS static ram 128kx8位低功耗CMOS静态ram
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static ram
55ns; 128 x 8-bit low power CMOS static ram
70ns; 128 x 8-bit low power CMOS static ram

File Size 187.70K  /  10 Page

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    IDT71124 IDT71124S12Y IDT71124S12YI IDT71124S15Y IDT71124S15YI IDT71124S20Y IDT71124S20YI IDT71124S12YG8 IDT71124S15YG8

Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT71124 IDT71124S12Y IDT71124S12YI IDT71124S15Y IDT71124S15YI IDT71124S20Y IDT71124S20YI IDT71124S12YG8 IDT71124S15YG8 IDT71124S15YG IDT71124S12YG IDT71124S12YGI8
Description CMOS static ram 1 Meg (128k x 8-Bit) Revolutionary Pinout
128k x 8 static ram Center Pwr & Gnd Pinout

File Size 82.35K  /  8 Page

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    Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.

Part No. UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 UPD4265400G5-A80 UPD4265400LE-A50 UPD4265400LE-A60 UPD4265400LE-A70 UPD4265400LE-A80 UPD4264400LE-A80 UPD4264400LE-A50 UPD4264400LE-A70 UPD4264400LE-A60 UPD4264400G5-A70 UPD4264400G5-A80 UPD4264400G5-A50
Description 2M x 8 static ram
256K x 4 static ram x4快速页面模式的Dram
512K x 32 static ram x4快速页面模式的Dram
3.3V 16K/32K x 36 FLEx36&#153; Synchronous Dual-Port static ram x4快速页面模式的Dram
x4 Fast Page Mode Dram x4快速页面模式的Dram
512K x 24 static ram x4快速页面模式的Dram
2-Mbit (128k x 16) static ram x4快速页面模式的Dram
128k x 8 static ram 128k的8静态ram
x4FastPageModeDram

File Size 488.69K  /  24 Page

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For 128k x 4-bit bicmos static ram Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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