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  800v 0.5a Datasheet PDF File

For 800v 0.5a Found Datasheets File :: 2008    Search Time::1.937ms    
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    APT45GP120JDQ2

MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
Part No. APT45GP120JDQ2
OCR Text ...t shutoff * 100 kHz operation @ 800v, 16A * 50 kHz operation @ 800v, 30A * RBSOA Rated S OT 22 7 ISOTOP (R) "UL Recognized...0.063" from Case for 10 Sec. Watts C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH...
Description 75 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT

File Size 452.88K  /  9 Page

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    APT45GP120J

Advanced Power Technology
Part No. APT45GP120J
OCR Text ...ansient * 50 kHz operation @ 800v, 16A * 20 kHz operation @ 800v, 30A * RBSOA rated G C E All Ratings: TC = 25C unless otherwis...0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Char...
Description MOSFET
POWER MOS 7 IGBT

File Size 97.29K  /  6 Page

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    APT75GN120JDQ3

Advanced Power Technology
Part No. APT75GN120JDQ3
OCR Text ...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 75A VGE = 15V MIN TYP MAX UNIT pF V nC 4800 275 210 9.0 425 30 245 225 60 41 620 110 8045 9620 7640 60 41 725 200 8620 13000 11400 J ns ns A Gate-Emitter Charge Gate-Collector ("Mi...
Description IGBT

File Size 445.80K  /  9 Page

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    APT75GN120J

Advanced Power Technology
Part No. APT75GN120J
OCR Text ...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 75A VGE = 15V MIN TYP MAX UNIT pF V nC 4800 275 210 9.0 425 30 245 225 60 41 620 110 8045 9620 7640 60 41 725 200 8620 13000 11400 J ns ns A Gate-Emitter Charge Gate-Collector ("Mi...
Description IGBT

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT5N100
OCR Text ...al gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters v ds =5v, i d =250 m a v ds =800v, t j =125c v ds =0v, v gs =30v v drain-...0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured wit...
Description 1000V,4A N-Channel MOSFET

File Size 392.38K  /  6 Page

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    APT25GT120BR APT25GT120BRG

Advanced Power Technology
Part No. APT25GT120BR APT25GT120BRG
OCR Text ...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 25A RG = 5 Turn-on Switching Energy (Diode) 6 TJ = +25C Inductive Switching (125...0 0 2 4 6 8 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE V GE = ...
Description Thunderbolt IGBT

File Size 392.33K  /  6 Page

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    APT25GN120SG APT25GN120BG APT25GN120B APT25GN120S

Advanced Power Technolo...
Advanced Power Technology
Part No. APT25GN120SG APT25GN120BG APT25GN120B APT25GN120S
OCR Text ...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 150A VGE = 15V MIN TYP MAX UNIT pF V nC 1800 105 85 9.5 155 10 85 75 22 17 280 135 T...0 7 TJ = +25C Turn-on Switching Energy (Diode) 6 mJ Inductive Switching (125C) VCC = 800v ...
Description IGBT

File Size 192.95K  /  6 Page

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    APT20GF120SRDQ1G APT20GF120BRDQ1 APT20GF120BRDQ1G APT20GF120SRDQ1

Advanced Power Technology
Part No. APT20GF120SRDQ1G APT20GF120BRDQ1 APT20GF120BRDQ1G APT20GF120SRDQ1
OCR Text ...Inductive Switching (25C) VCC = 800v VGE = 15V RG = 4.3 I C = 15A VGE = 15V MIN TYP MAX UNIT pF V nC 1090 125 65 10.5 100 12 65 64 10 9 1...0 V GE = 15V 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 APT20GF120B_SRDQ1(G) 15...
Description FAST IGBT & FRED

File Size 442.29K  /  9 Page

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    APTC80H29T1G

Microsemi Corporation
Part No. APTC80H29T1G
OCR Text 800v RDSon = 290m max @ Tj = 25C ID = 15A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Powe...0.5 670 Unit V A V m W A mJ August, 2007 1-6 APTC80H29T1G - Rev 0 Tc = 25C These Devices are ...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 322.05K  /  6 Page

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    APT35GN120B

Advanced Power Technology
Part No. APT35GN120B
OCR Text ...ductive switching (25c) v cc = 800v v ge = 15v i c = 35a r g = 2.2 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v ...0.5 % duty cycle 120 100 80 60 40 20 0 100 80 60 40 20 0 4 3.5 3 2.5 2 1.5 1.0 0.5 0 1.10 1.05 1.00...
Description MOSFET

File Size 180.06K  /  6 Page

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