...tics reverse recovery time v r =800v, i f =9a, d i f /d t =750a/s, t j =25c v r =800v, i f =9a, d i f /d t =750a/s, t j =125c v r =800...0 5 10 15 a 25 i f 1 power dissipation p tot = f ( t c ) parameter: t j 150 c 25 50 7...
...al gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters v ds =5v, i d =250 m a v ds =800v, t j =125c v ds =0v, v gs =30v v drain-...0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured wit...
...tive switching @ 25c v dd = 800v, v gs = 15v i d = 9a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = 15v i d ...0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junc...
...gy e ts t j =25 c, v cc =800v, i c =8a, v ge =15v/0v, r g =47 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 1.0 1.35 mj switching characteristic, inductive load, at t j =150 ...
Description
Fast IGBT in NPT-technology lower Eoff compared to previous generation