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  800v 0.5a Datasheet PDF File

For 800v 0.5a Found Datasheets File :: 2009    Search Time::2.016ms    
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    IDP09E120 IDP09E12009

Infineon Technologies AG
Part No. IDP09E120 IDP09E12009
OCR Text ...tics reverse recovery time v r =800v, i f =9a, d i f /d t =750a/s, t j =25c v r =800v, i f =9a, d i f /d t =750a/s, t j =125c v r =800...0 5 10 15 a 25 i f 1 power dissipation p tot = f ( t c ) parameter: t j 150 c 25 50 7...
Description Fast Switching Diode

File Size 341.74K  /  8 Page

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    APT25GN120SG APT25GN120BG APT25GN120B APT25GN120S

Advanced Power Technolo...
Advanced Power Technology
Part No. APT25GN120SG APT25GN120BG APT25GN120B APT25GN120S
OCR Text ...Inductive Switching (25C) VCC = 800v VGE = 15V I C = 150A VGE = 15V MIN TYP MAX UNIT pF V nC 1800 105 85 9.5 155 10 85 75 22 17 280 135 T...0 7 TJ = +25C Turn-on Switching Energy (Diode) 6 mJ Inductive Switching (125C) VCC = 800v ...
Description IGBT

File Size 192.95K  /  6 Page

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    APTM120UM95F-ALN

Advanced Power Technology
Part No. APTM120UM95F-ALN
OCR Text ...itching @ 125C VGS = 15V VBus = 800v ID = 103A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800v ID = 103A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800v ID = 103A, R G = 0.8 Min Typ 30.9 4.6 0.78 1122 144 720 20...
Description Single Switch MOSFET Power Module

File Size 296.97K  /  6 Page

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    APT20GF120SRDQ1G APT20GF120BRDQ1 APT20GF120BRDQ1G APT20GF120SRDQ1

Advanced Power Technology
Part No. APT20GF120SRDQ1G APT20GF120BRDQ1 APT20GF120BRDQ1G APT20GF120SRDQ1
OCR Text ...Inductive Switching (25C) VCC = 800v VGE = 15V RG = 4.3 I C = 15A VGE = 15V MIN TYP MAX UNIT pF V nC 1090 125 65 10.5 100 12 65 64 10 9 1...0 V GE = 15V 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 APT20GF120B_SRDQ1(G) 15...
Description FAST IGBT & FRED

File Size 442.29K  /  9 Page

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    APT45GP120JDF2

Advanced Power Technology
Part No. APT45GP120JDF2
OCR Text ...ction loss ? 50 khz operation @ 800v, 16a ? low gate charge ? 20 khz operation @ 800v, 30a ? ultrafast tail current shutoff ? rbsoa rated p...0 750 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i...
Description MOSFET

File Size 206.50K  /  9 Page

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    APT45GP120B2DF2

Advanced Power Technology
Part No. APT45GP120B2DF2
OCR Text ...tion loss ? 100 khz operation @ 800v, 16a ? low gate charge ? 50 khz operation @ 800v, 28a ? ultrafast tail current shutoff ? rbsoa rated p...0 750 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i...
Description MOSFET

File Size 197.15K  /  9 Page

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    AOTF5N100

Alpha & Omega Semiconductors
Part No. AOTF5N100
OCR Text ...al gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters v ds =5v, i d =250 m a v ds =800v, t j =125c v ds =0v, v gs =30v v drain-...0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured wit...
Description 1000V,4A N-Channel MOSFET

File Size 336.02K  /  6 Page

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    APT1201R4BFLLG

Microsemi Corporation
Part No. APT1201R4BFLLG
OCR Text ...tive switching @ 25c v dd = 800v, v gs = 15v i d = 9a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = 15v i d ...0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junc...
Description POWER MOS 7 FREDFET

File Size 247.31K  /  5 Page

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    SGB07N120 SGB07N12007

Infineon Technologies AG
Part No. SGB07N120 SGB07N12007
OCR Text ...gy e ts t j =25 c, v cc =800v, i c =8a, v ge =15v/0v, r g =47 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 1.0 1.35 mj switching characteristic, inductive load, at t j =150 ...
Description Fast IGBT in NPT-technology lower Eoff compared to previous generation

File Size 437.70K  /  11 Page

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