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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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Part No. |
APT8024LVFR APT8024B2VFR APT8024B2VFR_04 APT8024B2VFR04
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OCR Text |
800v 33A
0.240
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
136.78K /
4 Page |
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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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Part No. |
APT8024LVR APT8024B2VR APT8024B2VR_04 APT8024B2VR04
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OCR Text |
800v 33A
0.240
POWER MOS V
(R)
MOSFET
B2VR
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces th... |
Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
135.03K /
4 Page |
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NTE[NTE Electronics]
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Part No. |
NTE2387
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OCR Text |
.... . . . . . . . . . . . . . . . 800v Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0 VGS = 0, VDS = 800v, TC = +25C VGS = 0, VDS = 800v, TC = +125C Gate-Body Leakage Current Gate Thre... |
Description |
MOSFET N-Channel Enhancement Mode, High Speed Switch
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File Size |
23.05K /
2 Page |
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it Online |
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Infineon
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Part No. |
SGD02N120
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OCR Text |
...g energy e ts t j =25 c, v cc =800v, i c =2a, v ge =15v/0v, r g =91 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 0.22 0.29 mj switching characteristic, inductive load, at t j =150 c value par... |
Description |
IGBTs & DuoPacks - 2A 1200V TO252AA SMD IGBT
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File Size |
399.11K /
12 Page |
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it Online |
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Infineon
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Part No. |
IKB01N120H2E3045A IKP01N120H2
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OCR Text |
...gy e ts t j =25 c, v cc =800v, i c =1a, v ge =15v/0v, r g =241 ? , l 2) =180nh, c 2) =40pf energy losses include ?tail? and diode 3) reverse recovery. - 0.14 - mj anti-parallel diode characteristic diode reverse reco... |
Description |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT D2Pak IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT TO220 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
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File Size |
410.92K /
15 Page |
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
APTC80DDA29T3G
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OCR Text |
800v RDSon = 290m max @ Tj = 25C ID = 15A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Co...0.5 670
Unit V A V m W A
APTC80DDA29T3G
All ratings @ Tj = 25C unless otherwise specified Ele... |
Description |
Dual Boost chopper Super Junction MOSFET Power Module 15 A, 800 V, 0.29 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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File Size |
305.05K /
6 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SGW02N120
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OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
7A
60W
6A
50W
40W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISS... |
Description |
Fast IGBT in NPT-technology
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File Size |
307.92K /
11 Page |
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MICROSEMI[Microsemi Corporation]
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Part No. |
APTC80DSK29T3G
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OCR Text |
800v RDSon = 290m max @ Tj = 25C ID = 15A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies
11 22 19 CR1 23 ...0.5 670
Unit V A V m W A
July, 2006
APTC80DSK29T3G
All ratings @ Tj = 25C unless otherwise s... |
Description |
Dual Buck chopper Super Junction MOSFET Power Module
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File Size |
305.87K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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Part No. |
APTC80DSK29T3
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OCR Text |
800v RDSon = 290m max @ Tj = 25C ID = 15A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies
11 22 19 CR1 23 ...0 September, 2004
Max ratings 800 15 11 60 30 290 156 24 0.5 670
Unit V A
APTC80DSK29T3
Al... |
Description |
Dual buck chopper Super Junction MOSFET Power Module
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File Size |
333.72K /
6 Page |
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it Online |
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Price and Availability
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