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  800v 0.5a Datasheet PDF File

For 800v 0.5a Found Datasheets File :: 2008    Search Time::6.062ms    
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    APT35GP120BG

Microsemi Corporation
Part No. APT35GP120BG
OCR Text ...tion loss ? 100 khz operation @ 800v, 14a ? low gate charge ? 50 khz operation @ 800v, 25a ? ultrafast tail current shutoff ? rbsoa rated m...0.063" from case for 10 sec. to-247 g c e g c e power mos 7 ? igbt microsemi website - http://www.m...
Description POWER MOS 7? IGBT

File Size 250.77K  /  6 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTC80H29T3G
OCR Text 800v RDSon = 290m max @ Tj = 25C ID = 15A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Powe...0.5 670 Unit V A V m W A July, 2006 APTC80H29T3G All ratings @ Tj = 25C unless otherwise spe...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 312.44K  /  6 Page

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    ERB43

FUJI[Fuji Electric]
Part No. ERB43
OCR Text 800v / 0.5a ) Outline drawings, mm o3.0 o0.8 28 MIN. 5.0 28 MIN. Features High voltage by mesa design High reliability Marking Color code : Green B43 0 4 Abridged type name Applications High speed switching ...
Description FAST RECOVERY DIODE

File Size 60.80K  /  3 Page

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    APT35GP120B2DF2

Advanced Power Technology
Part No. APT35GP120B2DF2
OCR Text ...tion loss ? 100 khz operation @ 800v, 14a ? low gate charge ? 50 khz operation @ 800v, 25a ? ultrafast tail current shutoff ? rbsoa rated m...0.063" from case for 10 sec. power mos 7 ? igbt g c e 050-7407 rev c 1-2003 apt35gp120b2...
Description Power MOS 7 IGBT

File Size 119.12K  /  7 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTM100A13DG
OCR Text ...S = 0V,VDS= 1000V VGS = 0V,VDS= 800v Tj = 25C Tj = 125C Typ VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = 30 V, VDS = 0V 130 3 Max 600 2 156 5 450 Unit A mA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Q...
Description Phase leg with Series diodes MOSFET Power Module

File Size 268.23K  /  6 Page

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    Infineon
Part No. SGI02N120
OCR Text ...gy e ts t j =25 c, v cc =800v, i c =2a, v ge =15v/0v, r g =91 ? , l 1) =180nh, c 1) =40pf energy losses include ?tail? and diode reverse recovery. - 0.22 0.29 mj switching characteristic, inductive load, at t j =150 ...
Description IGBTs & DuoPacks - 2A 600V TO 262 SMD IGBT

File Size 324.52K  /  13 Page

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    APT15D120K

Advanced Power Technology
Part No. APT15D120K
OCR Text ...15a, di f /dt = -200a/s v r = 800v, t c = 25c i f = 15a, di f /dt = -200a/s v r = 800v, t c = 125c i f = 15a, di f /dt = -1000a/s...0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, jun...
Description MOSFET

File Size 54.24K  /  4 Page

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    CMF10120D

Cree, Inc
Part No. CMF10120D
OCR Text ...tance 928 pf v gs = 0v v ds = 800v f = 1mhz v ac = 25mv fig. 13 c oss output capacitance 63 c rss reverse transfer capacitance 7.5 e oss ...0/20v i d = 10a r g(ext) = 2.5, r l = 40 timing relative to v ds fg. 17 t fv fall time 21 t d(of...
Description Silicon Carbide Power MOSFET

File Size 684.16K  /  9 Page

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