bpw 34 silizium-pin-fotodiode; in smt und als reverse gullwing silicon pin photodiode; in smt and as reverse gullwing bpw 34 s bpw 34 s (e9087) 2003-02-04 1 bpw 34, bpw 34 s, bpw 34 s (e9087) wesentliche merkmale ? speziell geeignet fr anwendungen im bereich von 400 nm bis 1100 nm kurze schaltzeit (typ. 20 ns) dil-plastikbauform mit hoher packungsdichte bpw 34 s/(e9087): geeignet fr vapor-phase l?ten und ir-reflow l?ten (jedec level 4) anwendungen lichtschranken fr gleich- und wechsellichtbetrieb ir-fernsteuerungen industrieelektronik ?messen/steuern/regeln? typ type bestellnummer ordering code bpw 34 q62702-p73 bpw 34 s q62702-p1602 bpw 34 s (e9087) q62702-p1790 features especially suitable for applications from 400 nm to 1100 nm short switching time (typ. 20 ns) dil plastic package with high packing density bpw 34 s/(e9087): suitable for vapor-phase and ir-reflow soldering (jedec level 4) applications photointerrupters ir remote controls industrial electronics for control and drive circuits
2003-02-04 2 bpw 34, bpw 34 s, bpw 34 s (e9087) grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit bpw 34 s bpw 34 s (e9087) bpw 34 betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 ? + 100 ? 40 ? + 85 c sperrspannung reverse voltage v r 32 v verlustleistung, t a = 25 c total power dissipation p tot 150 mw kennwerte ( t a = 25 c, normlicht a, t = 2856 k) characteristics ( t a = 25 c, standard light a, t = 2856 k) bezeichnung parameter symbol symbol wert value einheit unit fotoempfindlichkeit, v r = 5 v spectral sensitivity s 80 ( 50) na/ix wellenl?nge der max. fotoempfindlichkeit wavelength of max. sensitivity s max2003-02-04 850 nm spektraler bereich der fotoempfindlichkeit s = 10% von s max spectral range of sensitivity s = 10% of s max 400 ? 1100 nm bestrahlungsempfindliche fl?che radiant sensitive area a 7.00 mm 2 abmessung der bestrahlungsempfindlichen fl?che dimensions of radiant sensitive area l b l w 2.65 2.65 mm mm halbwinkel half angle ? 60 grad deg. dunkelstrom, v r = 10 v dark current i r 2 ( 30) na spektrale fotoempfindlichkeit, = 850 nm spectral sensitivity s 0.62 a/w quantenausbeute, = 850 nm quantum yield 0.90 electrons photon
bpw 34, bpw 34 s, bpw 34 s (e9087) 2003-02-04 3 leerlaufspannung, e v = 1000 ix open-circuit voltage v o 365 ( 300) mv kurzschlu ? strom, e v = 1000 ix short-circuit current i sc 80 a anstiegs- und abfallzeit des fotostromes rise and fall time of the photocurrent r l = 50 ?; v r = 5 v; = 850 nm; i p = 800 a t r , t f 20 ns durchla ? spannung, i f = 100 ma, e = 0 forward voltage v f 1.3 v kapazit ? t, v r = 0 v, f = 1 mhz, e = 0 capacitance c 0 72 pf temperaturkoeffizient von v o temperature coefficient of v o tc v ? 2.6 mv/k temperaturkoeffizient von i sc temperature coefficient of i sc tc i 0.18 %/k rausch ? quivalente strahlungsleistung noise equivalent power v r = 10 v, = 850 nm nep 4.1 10 ? 14 nachweisgrenze, v r = 10 v, = 850 nm detection limit d* 6.6 10 12 kennwerte ( t a = 25 c, normlicht a, t = 2856 k) characteristics ( t a = 25 c, standard light a, t = 2856 k) (cont ? d) bezeichnung parameter symbol symbol wert value einheit unit w hz ----------- - cm hz w --------------------------
bpw 34, bpw 34 s, bpw 34 s (e9087) 2003-02-04 4 relative spectral sensitivity s rel = f ( ) dark current i r = f ( v r ), e = 0 directional characteristics s rel = f ( ? ) ohf00078 0 rel s 400 20 40 60 80 % 100 500 600 700 800 900 nm 1100 0 ohf00080 r r v 0 5 10 15 v 20 1000 2000 3000 4000 pa ohf01402 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ? 0.2 0.4 0.6 0.8 1.0 100 0 0 0 photocurrent i p = f ( e v ), v r = 5 v open-circuit voltage v o = f ( e v ) capacitance c = f ( v r ), f = 1 mhz, e = 0 e ohf01066 v 0 10 p -1 10 10 1 10 2 10 4 10 0 10 1 10 2 10 34 10 3 10 2 10 1 10 10 0 v o amv p v o 10 3 lx v ohf00081 r -2 10 c 0 -1 10 0 10 1 10 2 10 v 10 20 30 40 50 60 70 80 pf 100 total power dissipation p tot = f ( t a ) dark current i r = f ( t a ), v r = 10 v, e = 0 t ohf00958 a 0 tot p 0 20 40 60 80 ?c 100 mw 20 40 60 80 100 120 140 160 t ohf00082 a -1 10 0 r 10 0 10 1 10 2 10 3 na 20 40 60 80 ? c 100
bpw 34, bpw 34 s, bpw 34 s (e9087) 2003-02-04 5 ma?zeichnung package outlines ma e werden wie folgt angegeben: mm (inch) / dimensions are specified as follows: mm (inch). geoy6643 4.0 (0.157) 3.7 (0.146) 4.3 (0.169) 4.5 (0.177) 5.4 (0.213) 4.9 (0.193) 0.6 (0.024) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) 1.2 (0.047) 0.7 (0.028) 0.3 (0.012) 0.5 (0.020) 0.8 (0.031) 0.6 (0.024) cathode marking 0.6 (0.024) 0.8 (0.031) 1.9 (0.075) 2.2 (0.087) 3.0 (0.118) 3.5 (0.138) 0.6 (0.024) 0.4 (0.016) chip position 0.4 (0.016) 0.6 (0.024) 0.35 (0.014) 0.2 (0.008) 0 ... 5 ? 5.08 (0.200) spacing 1.4 (0.055) photosensitive area 2.65 (0.104) x 2.65 (0.104) 1.8 (0.071) bpw 34 4.5 (0.177) 4.3 (0.169) 4.0 (0.157) 3.7 (0.146) 1.5 (0.059) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) photosensitive area cathode lead geoy6863 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 1.2 (0.047) 1.1 (0.043) (0...0.004) 0...5 ? 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 2.65 (0.104) x 2.65 (0.104) 1.8 (0.071) 0.2 (0.008) chip position 0...0.1 bpw 34 s
2003-02-04 6 bpw 34, bpw 34 s, bpw 34 s (e9087) ma e werden wie folgt angegeben: mm (inch) / dimensions are specified as follows: mm (inch). published by osram opto semiconductors gmbh & co. ohg wernerwerkstrasse 2, d-93049 regensburg ? all rights reserved. attention please! the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. 4.5 (0.177) 4.3 (0.169) 4.0 (0.157) 3.7 (0.146) 1.5 (0.059) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) photosensitive area cathode lead geoy6916 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 1.2 (0.047) 1.1 (0.043) (0...0.004) 0...5 ? 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 2.65 (0.104) x 2.65 (0.104) 1.8 (0.071) 0.2 (0.008) 0...0.1 chip position bpw 34 s (e9087)
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