2012. 8. 22 1/5 semiconductor technical data kma3d6n20sa n-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features h v dss =20v, i d =3.6a h drain-source on resistance r ds(on) =45m ? (max.) @ v gs =4.5v r ds(on) =65m ? (max.) @ v gs =2.5v h super hige dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q note : surface mounted on fr4 board, t ? 10sec. pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 20 v gate-source voltage v gss ? 12 v drain current dc i d 3.6 a pulsed i dp 14 drain-source-diode forward current i s 1.25 a drain power dissipation t a =25 ? p d 1.25 w t a =70 ? 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient r thja 100 ? /w 2 3 1 gs d 1 2 3 knc
2012. 8. 22 2/5 kma3d6n20sa revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =250 a, v gs =0v, 20 - - v drain cut-off current i dss v gs =0v, v ds =16v - - 1 a gate leakage current i gss v gs = ? 10v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 0.6 0.9 1.5 v drain-source on resistance r ds(on) * v gs =4.5v, i d =2.5a - 32 45 m ? v gs =2.5v, i d =2a - 50 65 on-state drain current i d(on) * v gs =4.5v, v ds =5v 10 - - a forward transconductance g fs * v ds =5v, i d =3a - 8 - s dynamic input capaclitance c iss v ds =15v, v gs = 0v, f=1mhz, - 437 - pf ouput capacitance c oss - 87 - reverse transfer capacitance c rss - 51 - total gate charge q g * v ds =10v, v gs =4.5v, i d =3.5a - 6.6 - nc gate-source charge q gs * - 0.8 - gate-drain charge q gd * - 1.85 - turn-on delay time t d(on) * v dd =10v, v gs =4.5v i d =1a, r g =6 ? (note 1) - 13 - ns turn-on rise time t r * - 19 - turn-off delay time t d(off) * - 85 - turn-off fall time t f * - 47 - source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i dr =1.25a - 0.81 1.2 v note 1> * : pulse test : pulse width <300 k , duty cycle < 2%
2012. 8. 22 3/5 kma3d6n20sa revision no : 2
2012. 8. 22 4/5 kma3d6n20sa revision no : 2
2012. 8. 22 5/5 kma3d6n20sa revision no : 2 fig9. gate charge circuit and wave form v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig10. resistive load switching v ds v gs v ds v gs 2.0 ma schottky diode 10 v 6 ? r l 0.5 v dss 0.5 v dss
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