an itw company from deep uv to mid-ir revision may 25 , 2018 page 1 of 2 photodiode 331 mm 2 SXUV300C features rectangular active area excellent stability after euv exposure windowless package for responsivity to 1 nm ceramic package parameters test conditions min typ max units active area 22.05 mm x 15.85 mm 331 mm 2 responsivity see attached graph a/w shunt resistance @ 10 mv 5 mohms reverse breakdown voltage, v r i r = 1 a 20 25 volts capacitance, c v r = 0 v 40 nf response time , tr rl = 50 , v r = 0 v 10 u s ec storage and operating temperature range ambient - 10 to 40 c nitrogen or vacuum - 20 to 80 c maximum junction temperature 70 c lead soldering temperature 1 n/a electro - optical characteristics at 25 c thermal parameters 1 soldering not recommended. use with axuv300cts socket or equivalent.
an itw company from deep uv to mid-ir revision may 25 , 2018 page 2 of 2 photodiode 331 mm 2 SXUV300C 0.35 responsivity (a/w) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 100 wavelength (nm) 1000 typical photon responsivity package information dimensions are in inch [metric] units. ordering information 1260 calle suerte, camarillo, california 93012 phone: +1 805.499.03 3 5 | fax: +1 805.499.8108 | sales@optodiode.com | www. optodiode.com odd - sxu - 044 large euv high speed photodetector in a ceramic package specifications are subject to change without prior notice.
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