p age:p 4 - p 1 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. fe a tures the AO3402 uses advanced trench technology to provide excellent rds(on), low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch applicatio ns. parameter symbol maximum unit drain - source voltage v ds 30 v gate - source voltage v gs 1 2 v continuous drain current a t a =25c i d 4 a t =70c 3.4 pulsed drain current b i dm 15 power dissipation a t a =25c p d 1.4 w t a =70c 1 junction and storage temperature range t j , t stg - 55 to 150 c thermal characteristics parameter symbol typ max unit maximum junct ion - to - ambient a t 10s r ja 70 90 c/w maximum junction - to - ambient a steady - state 100 125 c/w maximum junction - to - lead c steady - state r jl 63 80 c/w ao340 2 n - channel mosfet sot - 23 1.gate 2.source 3.drain g d s g d s absolute maximum ratings (ta=25 o c, unless otherwise noted)
p age:p 4 - p 2 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. electrical characteristics (ta=25c, unless otherwise noted) a: the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are o btained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with t a=25c. the soa curve provides a single pulse rating s y m bo l p a r ame t er cond iti on s m i n t y p m ax un it s t a t i c p a r a m e t er s bv d s s d r a i n - s ou r ce b r ea k do w n v o l t age i d = 250 a , v g s = 0v 30 v i d s s z e r o g a t e v o l t age d r a i n c u rr ent v d s = 24 v , v g s = 0v 1 ua t j = 55 c 5 i g s s g a t e - b ody l ea k age cu rr ent v d s = 0 v , v g s = 12v 100 na v g s ( t h ) g a t e t h r esho l d v o l t age v d s =v gs i d = 250 a 0 . 6 1 1 . 4 v i d( o n ) o n s t a t e d r a i n cu rr ent v g s = 4 . 5 v , v d s = 5v 10 a r ds(on) s t a t i c d r a i n - s ou r ce o n - r es i s t ance v g s = 10 v , i d = 4a 45 55 t j = 125 c 66 80 v g s = 4 . 5 v , i d = 3a 55 70 v g s = 2 . 5 v , i d = 2a 83 110 g fs f o r w a r d t r ansconduc t an ce v d s = 5 v , i d = 4a 8 s v s d di ode f o r w a r d v o l t age i s = 1 a , v g s = 0v 0 . 8 1 v i s m a x i m um b od y - di ode c on t i nuous c u rr ent 2 . 5 a d y n a m i c p a r a m e t er s c i s s i nput c apac i t ance v g s = 0 v , v d s = 15 v , f = 1 m h z 390 pf c o s s o u t put c apac i t ance 54 . 5 pf c r s s r eve r se t r ans f er c apac i t ance 41 pf r g g a t e r es i s t ance v g s = 0 v , v d s = 0 v , f = 1 m h z 3 s w i t ch i n g p a r a m e t er s q g t o t al g a t e c ha r ge v g s = 4 . 5 v , v d s = 15 v , i d = 4a 4 . 34 nc q g s g a t e s ou r ce c ha r ge 0 . 6 nc q g d g a t e d r a i n c ha r ge 1 . 38 nc t d(on ) t u r n - o n d e l a y ti m e v g s = 10 v , v d s = 15 v , r l = 3 . 75 , r g e n = 6 3 . 3 ns t r t u r n - o n ri se ti m e 1 ns t d(o ff ) t u r n - of f d e l a y ti m e 21 . 7 ns t f t u r n - of f f a l l ti m e 2 . 1 ns t r r b ody di ode r eve r se r ecove r y ti m e i f = 4 a , d i/ d t = 100 a / 12 ns q r r b ody di ode r eve r se r ecove r y c ha r ge i f = 4 a , d i / d t = 100 a / 6 . 3 nc a o3402 m m m us us
p age:p 4 - p 3 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. ao340 2 typical charact eristics 0 3 6 9 12 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =2v 2.5v 3v 4.5v 10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 i d (a) v gs (volts) figure 2: transfer characteristics 0 25 50 75 100 125 150 0 2 4 6 8 10 r ds(on) (m w w w w ) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v v gs =10v 0 3 6 9 12 15 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =2v 2.5v 3v 4.5v 10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 i d (a) v gs (volts) figure 2: transfer characteristics 0 25 50 75 100 125 150 0 2 4 6 8 10 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =2.5v v gs =10v v gs =4.5v 0 50 100 150 200 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =2a 25 c 125 c
p age:p 4 - p 4 plastic - encapsulate m osfets guangdong hottech industrial co,. ltd. ao340 2 typical charact eristics 0 1 2 3 4 5 0 1 2 3 4 5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 10 20 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 5 10 15 20 power (w) c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =15v i d =4a t j(max) =150 c t a =25 c 10 m s 0 1 2 3 4 5 0 1 2 3 4 5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 10 20 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =15v i d =4a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s
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