opb732 uses an infrared led and phototransistor in a refectve switch confguraton. the assembly is ofered with either pcboard through hole pins ( opb732 ) or 24 (610 mm), 26 awg wires ( OPB732WZ ), and uses an opaque housing to reduce the sensors ambient light sensitvity. the emiter and sensor are protected by a clear window, providing a device that can operate in a dusty environment. the phototransistor can be confgured as a common collector or common emiter device. while an object is in the refectve path of the device, light from the led will be refected back to the housing irradiatng th e surface (base) of the phototransistor. when infrared light strikes the phototransistor, the transistor becomes forward biased and is considered to be in the on state, providing an i c(on) current proportonal to the light striking the phototransistor. with the infrared light from the led not being refected to the phototransistor, the phototransistor turns off, minimizing the i c(on) current. custom electrical, wire and cabling and connectors are available. contact your local representatve or optek for more informaton. ? non - contact refectve object sensor ? assembly line automaton ? machine automaton ? equipment security ? door sensor ? machine safety ? end of travel sensor ? pc board mountng (opb732) ? 24 (610 mm) 26 awg wired with mountng tabs (OPB732WZ) ? non - contact infrared switch ? up to 1 or more refectve distance depending on circuitry OPB732WZ opb732 ordering information part number led peak wavelength lead length / spacing opb732 850 nm 0.150/ see diagram OPB732WZ 24" / 26 awg wire rohs
3 4 2 1 opb732 dimensions are in: inches [ millimeters] OPB732WZ pin # led green - 1 emitter white - 2 collector red - 3 anode black - 4 cathode [7.62] .300 min.
storage temperature - 40 c to +100 c operatng temperature - 40 c to +85 c lead soldering temperature (1/16 (1.6mm) from case for 5 seconds with soldering iron) (2) 260 c forward current 50 ma peak forward current (2 s pulse width, 0.1% duty cycle) 1 a reverse dc voltage 3 v power dissipaton 100 mw collector - emiter voltage 30 v collector dc current 50 ma power dissipaton 100 mw v f forward voltage - - 1.8 v i f = 20 ma i r reverse current - - 100 a v r = 2 v v (br)ceo collector - emiter breakdown voltage 30 - - v i c = 100 a, e e = 0 mw/cm 2 i ceo collector - emiter dark current - - 100 na v ce = 10 v, e e = 0 mw/cm 2 v ce(sat) collector - emiter saturaton voltage (4) - - 0.4 v i c = 250 a, i f = 30 ma , (4) i c(on) on - state collector current (4) 0.25 - - ma v ce = 1 v, i f = 30 ma, (4) i cx cross talk - - 50 a v ce = 5 v, i f = 30 ma, no refectve surface notes: (1) all parameters tested using pulse technique. (2) rma fux is recommended. duraton can be extended to 10 seconds maximum when fow soldering. (3) methanol or isopropanol are recommended as cleaning agents. the plastc housing is soluble in chlorinated hydrocarbons and keytones. (4) distance = 1 (from front of package to a 90% difuse refectve white card)
dc drive circuit for led & phototransistor pulsed drive circuit for led & phototransistor i c(on) vs distance (i f =30ma) inverted output light drive ckt. drive ckt. light output r light d output r l light output inverted r l d r d r r l r d r l d d i cc r v = led - v l l i cc r v = ce - v l r ce cc = l i - v v led cc r = d d i v - v - v ce v cc cc v cc v cc v ee v (gnd) ee v (gnd) ee v (gnd) ee v (gnd) i l l r - v v = cc ce i d d - v r v = cc led l r i = l - v cc v ce - v i d = r d cc v - v led ce pulsed - driver circuits for led & phototransistor i c(on) vs distance (i f =30ma) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.00 0.50 1.00 1.50 2.00 2.50 3.00 distance (inches) normalized i c(on) normalized at 1.00 inches
|
