2SA1357 transistor (pnp) features power dissipation p cm : 1.5 w (tamb=25 ) collector current i cm : -5 a collector-base voltage v (br)cbo : -35 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -1 ma, i e =0 -35 v collector-emitter breakdown voltage v (br)ceo ic= -10 ma, i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e = -1m a, i c =0 -8 v collector cut-off current i cbo v cb = -35 v, i e =0 -100 a emitter cut-off current i ebo v eb = -8 v, i c =0 -100 a h fe(1) v ce = -2 v, i c = -0.5 a 100 320 dc current gain h fe(2) v ce = -2 v, i c = -4 a 70 collector-emitter saturation voltage v ce(sat) i c = -4 a, i b = -0.1 a -1 v base-emitter voltage v be v ce = -2 v, i c = -4 a -1.5 v transition frequency f t v ce = -2 v, i c = -0.5 a 170 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 62 pf classification of h fe(1) rank o y range 100-200 160-320 marking 1 2 3 to-126c 1. emitter 2. collector 3. emitter 2SA1357 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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