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? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 rohs LSIC1MO120E0160 1200 v n-channel, enhancement-mode sic mosfet features applications ? optimized for high- frequency, high-effciency applications ? extremely low gate charge and output capacitance ? low gate resistance for high-frequency switching ? normally-off operation at all temperatures ? ultra-low on-resistance ? high-frequency applications ? solar inverters ? switch mode power supplies ? ups ? motor drives ? high voltage dc/dc converters ? battery chargers ? induction heating circuit diagram to-247-3l 2 1 3 * * body diode product summary characteristics value unit v ds 1200 v typical r ds(on) 160 m i d ( t c 100 c) 14 a ? littelfuse rohs logo = rohs conform ? littelfuse hf logo = halogen free ? littelfuse pb-free logo = pb-free lead plating environmental rohs pb pb sic mosfet LSIC1MO120E0160, 1200 v, 160 mohm, to-247-3l rev 1.0,
? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 thermal characteristics maximum ratings characteristics symbol conditions value unit continuous drain current i d v gs = 20 v, t c = 25 c 22 a v gs = 20 v, t c = 100 c 14 pulsed drain current 1 i d(pulse) t c = 25 c 44 a power dissipation p d t c = 25 c, t j = 150 c 125 w operating junction temperature t j -55 to 150 c gate-source voltage v gs,max absolute maximum values -6 to 22 v v gs,op,tr transient, <1% duty cycle -10 to 25 v gs,op recommended dc operating values -5 to 20 storage temperature t stg - -55 to 150 c lead temperature for soldering t sold - 260 c mounting torque m d m3 or 6-32 screw 0.6 nm 5.3 in-lb footnote 1: pulse width limited by t j,max characteristics symbol value unit maximum thermal resistance, junction-to-case r th,jc,max 1. 0 c/w maximum thermal resistance, junction-to-ambient r th,ja,max 40 c/w electrical characteristics (t j = 25 c unless otherwise specifed) characteristics symbol conditions min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 1200 - - v zero gate voltage drain current i dss v ds = 1200 v, v gs = 0 v - 1 100 a v ds = 1200 v, v gs = 0 v, t j = 150 c - 2 - gate leakage current i gss,f v gs = 22 v, v ds = 0 v - - 100 na i gss,r v gs = -6 v, v ds = 0 v - - 100 drain-source on-state resistance r ds(on) i d = 10 a, v gs = 20 v - 160 200 m i d = 10 a, v gs = 20 v, t j = 150 c - 210 - gate threshold voltage v gs,(th) v ds = v gs , i d = 5 ma 1. 8 2.8 4.0 v v ds = v gs , i d = 5 ma, t j = 150 c - 1. 9 - gate resistance r g resonance method, drain-source shorted - 0.95 - sic mosfet LSIC1MO120E0160, 1200 v, 160 mohm, to-247-3l rev 1.0, ? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 electrical characteristics (t j = 25 c unless otherwise specifed) characteristics symbol conditions value unit min typ max dynamic characteristics turn-on switching energy e on v dd = 800 v, i d = 10 a, v gs = -5/+20 v, r g,ext = 5 , l = 1.4mh, fwd=lsic2sd120a05 - 77 - j turn-off switching energy e off - 59 - total per-cycle switching energy e ts - 136 - input capacitance c iss v dd = 800 v, v gs = 0 v, f = 1 mhz, v ac = 25 mv - 870 - pf output capacitance c oss - 45 - reverse transfer capacitance c rss - 7 - c oss stored energy e oss - 14 - j total gate charge q g v dd = 800 v, i d = 10 a, v gs = -5/+20 v - 57 - nc gate-source charge q gs - 14 - gate-drain charge q gd - 20 - turn-on delay time t d(on) v dd = 800 v, v gs = -5/+20 v, i d = 10 a, r g,ext = 5 , r l = 80 , timing relative to v ds - 12 - ns rise time t r - 8 - turn-off delay time t d(off) - 19 - fall time t f - 14 - reverse diode characteristics characteristics symbol conditions value unit min typ max diode forward voltage v sd i s = 5 a, v gs = 0 v - 3.8 - v i s = 5 a, v gs = 0 v, t j = 150 c - 3.4 - continuous diode forward current i s v gs = 0 v, t c = 25 c - - 24 a peak diode forward current 1 i sp - - 44 footnote 1: pulse width limited by t j,max sic mosfet LSIC1MO120E0160, 1200 v, 160 mohm, to-247-3l rev 1.0, ? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 . b y j n v n 1 p x f s % j t t j q b u j p o 8 $ b t f 5 f n q f s b u v s f 5 $ $ figure 2: transfer characteristics ( v ds = 10 v ) figure 3: output characteristics ( t j = 25 c ) figure 1: maximum power dissipation ( t j = 150 c ) figure 4: output characteristics ( t j = 150 c ) figure 6: reverse conduction characteristics (t j = 25 c) figure 5: output characteristics (t j = -55 c) $ $ $ % s b j o $ v s s f o u * % " ( b u f 4 p v s d f 7 p m u b h f 7 ( 4 7 7 7 7 7 7 7 % s b j o $ v s s f o u * % " % s b j o 4 p v s d f 7 p m u b h f 7 % 4 7 1 v m t f 8 j e u i 0 t 7 7 7 7 7 7 % s b j o $ v s s f o u * % " % s b j o 4 p v s d f 7 p m u b h f 7 % 4 7 1 v m t f 8 j e u i 0 t 7 7 7 7 7 7 % s b j o $ v s s f o u * % " % s b j o 4 p v s d f 7 p m u b h f 7 % 4 7 1 v m t f 8 j e u i 0 t 7 7 7 7 7 7 3 f w f s t f $ v s s f o u * 4 " 3 f w f s t f 7 p m u b h f 7 4 % 7 1 v m t f 8 j e u i 0 t sic mosfet LSIC1MO120E0160, 1200 v, 160 mohm, to-247-3l rev 1.0, ? 2018 littelfuse, inc. specifcations are subject to change without notice. revised: 03/02/18 figure 7: reverse conduction characteristics (t j = 150 c) figure 8: reverse conduction characteristics (t j = -55 c) figure 9: transient thermal impedance figure 10: safe operating area (t c = 25 c) figure 11: on-resistance vs. drain current figure 12: normalized on-resistance 7 7 7 7 7 7 3 f w f s t f $ v s s f o u * 4 " 3 f w f s t f 7 p m u b h f 7 4 % 7 1 v m t f 8 j e u i 0 t 7 7 7 7 7 7 3 f w f s t f $ v s s f o u * 4 " 3 f w f s t f 7 p m u b h f 7 4 % 7 1 v m t f 8 j e u i 0 t 4 j o h m f 1 v m t f 5 s b o t j f o u 5 i f s n b m * n q f e b o d f ; u i + $ / p s n b m j [ f e u p 3 u i + $ 1 v m t f 8 j e u i t 0 t 0 t n t % $ 4 j o h m f 1 v m t f % s b j o $ v s s f o u * % " % s b j o 4 p v s d f 7 p m u b h f 7 % 4 7 $ $ $ / p s n b m j [ f e 0 o s f t j t u b o d f 3 % 4 0 / % s b j o $ v s s f o u * % " 7 ( 4 7 * % " |