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? semiconductor components industries, llc, 2016 december, 2017 ? rev. 0 1 publication order number: nxh80b120h2q0/d NXH80B120H2Q0SG dual boost power module 1200 v, 40 a igbt with sic rectifier the NXH80B120H2Q0SG is a power module containing a dual boost stage consisting of two 40 a / 1200 v igbts, two 15 a / 1200 v silicon carbide diodes, two 25 a / 1600 v anti?parallel diodes for the igbts and two 25 a / 1600 v bypass rectifiers. an on?board thermistor is included. features ? dual boost 40 a / 1200 v igbt + sic rectifier hybrid module ? 25 a / 1600 v bypass and anti?parallel diodes ? igbt specifications: v ce(sat) = 2.2 v, e sw = 2180 j ? sic rectifier specification: v f = 1.4 v ? solderable pins ? thermistor typical applications ? solar inverter ? uninterruptible power supplies 7, 8 2 11 ,12 13,14 20 19 9,10 1 3,4 17,18 5,6,15,16 21 22 thermistor d3 d1 d2 t1 d4 ntc d5 bypass diode d6 bypass diode boost diode boost diode boost igbt 1 t2 boost igbt 2 igbt protection diode igbt protection diode figure 1. NXH80B120H2Q0SG schematic diagram NXH80B120H2Q0SG atyyww www. onsemi.com marking diagram q0boost case 180aj pin connections see detailed ordering and shipping information on page 4 o f this data sheet. ordering information NXH80B120H2Q0SG = device code yyww = year and work week code a = assembly site code t = test site code g = pb?free package
NXH80B120H2Q0SG www. onsemi.com 2 table 1. absolute maximum ratings (note 1) t j = 25 c unless otherwise noted rating symbol value unit boost igbt collector?emitter voltage v ces 1200 v gate?emitter voltage v ge 20 v continuous collector current @ t h = 80 c (t j = 175 c) i c 41 a pulsed collector current (t j = 175 c) i cpulse 123 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 103 w short circuit withstand time @ v ge = 15 v, v ce = 600 v, t j 150 c t sc 5 s minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c boost diode peak repetitive reverse voltage v rrm 1200 v continuous forward current @ t h = 80 c (t j = 175 c) i f 24 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 79 w surge forward current (60 hz single half?sine wave) i fsm 69 a i 2 t ? value (60 hz single half?sine wave) i 2 t 19 a 2 s minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c bypass diode / igbt protection diode peak repetitive reverse voltage v rrm 1600 v continuous forward current @ t h = 80 c (t j = 175 c) i f 46 a repetitive peak forward current (t j = 175 c, t p limited by t jmax ) i frm 130 a power dissipation per diode @ t h = 80 c (t j = 175 c) p tot 66 w minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c thermal properties storage temperature range t stg ?40 to 125 c insulation properties isolation test voltage, t = 1 sec, 60 hz v is 3000 v rms creepage distance 12.7 mm stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics, recommended operating ranges and/or application information for safe operating parameters. table 2. recommended operating ranges rating symbol min max unit module operating junction temperature t j ?40 (t jmax ?25) c functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability.
NXH80B120H2Q0SG www. onsemi.com 3 table 3. electrical characteristics t j = 25 c unless otherwise noted parameter test conditions symbol min typ max unit boost igbt characteristics collector?emitter cutoff current v ge = 0 v, v ce = 1200 v i ces ? ? 200 a collector?emitter saturation voltage v ge = 15 v, i c = 40 a, t j = 25 c v ce(sat ) ? 2.20 2.5 v v ge = 15 v, i c = 40 a, t j = 150 c ? 2.16 ? gate?emitter threshold voltage v ge = v ce , i c = 1.5 ma v ge(th) ? 5.45 6.4 v gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 200 na turn?on delay time t j = 25 c v ce = 700 v, i c = 40 a v ge = 15 v, r g = 4 t d(on) ? 27 ? ns rise time t r ? 19 ? turn?off delay time t d(off) ? 94 ? fall time t f ? 78 ? turn?on switching loss per pulse e on ? 540 ? j turn?off switching loss per pulse e off ? 1640 ? turn?on delay time t j = 125 c v ce = 700 v, i c = 40 a v ge = 15 v, r g = 4 t d(on) ? 27 ? ns rise time t r ? 20 ? turn?off delay time t d(off) ? 110 ? fall time t f ? 189 ? turn?on switching loss per pulse e on ? 620 ? j turn?off switching loss per pulse e off ? 3590 ? input capacitance v ce = 25 v, v ge = 0 v, f = 10 khz c ies ? 9700 ? pf output capacitance c oes ? 200 ? reverse transfer capacitance c res ? 170 ? total gate charge v ce = 600 v, i c = 40 a, v ge = 15 v q g ? 400 ? nc thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 0.92 ? c/w boost diode characteristics diode reverse leakage current v r = 1200 v i r ? ? 300 a diode forward voltage i f = 15 a, t j = 25 c v f ? 1.42 1.7 v i f = 15 a, t j = 150 c ? 1.95 ? reverse recovery time t j = 25 c v ce = 700 v, i c = 40 a v ge = 15 v, r g = 4 t rr ? 27 ? ns reverse recovery charge q rr ? 280 ? nc peak reverse recovery current i rrm ? 16 ? a peak rate of fall of recovery current di/dt ? 1080 ? a/ s reverse recovery energy e rr ? 130 ? j reverse recovery time t j = 125 c v ce = 700 v, i c = 40 a v ge = 15 v, r g = 4 t rr ? 28 ? ns reverse recovery charge q rr ? 250 ? nc peak reverse recovery current i rrm ? 15 ? a peak rate of fall of recovery current di/dt ? 940 ? a/ s reverse recovery energy e rr ? 110 ? j thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 1.21 ? c/w bypass diode/igbt protection diode characteristics diode reverse leakage current v r = 1600 v, t j = 25 c i r ? ? 100 a
NXH80B120H2Q0SG www. onsemi.com 4 table 3. electrical characteristics t j = 25 c unless otherwise noted parameter unit max typ min symbol test conditions bypass diode/igbt protection diode characteristics diode forward voltage i f = 25 a, t j = 25 c v f ? 1.0 1.4 v i f = 25 a, t j = 150 c ? 0.90 ? thermal resistance ? chip?to?heatsink thermal grease, thickness < 100 m, = 0.84 w/mk r thjh ? 1.44 ? c/w thermistor characteristics nominal resistance r 25 ? 22 ? k nominal resistance t = 100 c r 100 ? 1486 ? deviation of r25 r/r ?5 ? 5 % power dissipation p d ? 200 ? mw power dissipation constant ? 2 ? mw/k b?value b(25/50), tolerance 3% ? 3950 ? k b?value b(25/100), tolerance 3% ? 3998 ? k product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. ordering information orderable part number marking package shipping NXH80B120H2Q0SG q0boost NXH80B120H2Q0SG q0boost ? case 180aj (pb?free and halide?free solder pins) 24 units / blister tray
NXH80B120H2Q0SG www. onsemi.com 5 typical characteristics ? boost igbt & boost diode figure 1. igbt typical output characteristics figure 2. igbt typical output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 10 8 6 4 2 0 0 30 60 90 150 8 4 3 2 1 0 0 30 60 90 150 figure 3. igbt typical transfer characteristics figure 4. diode forward characteristic v ge , gate?emitter voltage (v) v f , forward voltage (v) 10 8 6 412 2 0 0 30 60 120 150 2.5 2.0 1.0 0.5 0 0 3 6 15 18 figure 5. typical turn on loss vs. ic figure 6. typical turn off loss vs. ic i c , collector current (a) i c , collector current (a) 60 40 20 0 15 215 415 815 1215 1615 80 30 10 0 15 2015 3015 4015 5015 7015 i c , collector current (a) i c , collector current (a) i c , collector current (a) i f , forward current (a) e on , turn on loss ( j) e off , turn off loss ( j) t j = 25 c 17 v to 12 v 10 v 9 v 8 v 7 v t j = 150 c 17 v to 12 v 11 v 9 v 8 v 7 v t j = 25 c t j = 150 c 90 t j = 25 c t j = 150 c 25 c 125 c 80 1015 25 c 125 c 40 v ge = 15 v v ce = 700 v r g = 4 120 120 1015 6015 v ge = 15 v v ce = 700 v r g = 4 11 v 10 v 567 9 50 30 10 70 20 60 70 50 615 1415 1.5 12
NXH80B120H2Q0SG www. onsemi.com 6 typical characteristics ? boost igbt & boost diode figure 7. typical switching times vs. ic figure 8. typical switching times vs. ic i c , collector current (a) i c , collector current (a) 80 30 10 0 0 30 60 120 150 180 240 60 40 20 0 0 10 15 20 30 35 40 figure 9. typical reverse recovery time vs. ic figure 10. typical reverse recovery charge vs. ic i c , collector current (a) i c , collector current (a) 40 0 0 5 15 20 25 40 45 60 20 0 100 200 400 figure 11. typical reverse recovery peak current vs. ic figure 12. typical diode current slope vs. ic i c , collector current (a) i c , collector current (a) 60 40 20 0 8 10 12 14 16 18 60 40 20 0 0 200 400 800 1200 1400 time (ns) time (ns) t rr , reverse recovery time (ns) i rrm , reverse recovery current (a) di/dt, diode current slope (a/ s) 60 80 25 c 125 c 20 60 80 25 c 125 c 40 80 q rr , reverse recovery charge (nc) v ge = 15 v v ce = 700 v r g = 4 v ge = 15 v v ce = 700 v r g = 4 v ge = 15 v v ce = 700 v r g = 4 80 20 v ge = 15 v v ce = 700 v r g = 4 80 90 210 v ge = 15 v v ce = 700 v r g = 4 t d(off) @ 125 c t d(off) @ 25 c t f @ 125 c t f @ 25 c t d(on) @ 125 c t d(on) @ 25 c t r @ 125 c t r @ 25 c 10 30 35 250 300 350 600 25 c 125 c 25 c 125 c 5 v ge = 15 v v ce = 700 v r g = 4 20 40 50 70 30 10 50 70 50 10 30 70 150 25 50 30 10 70 50 30 10 70 50 30 10 70 1000
NXH80B120H2Q0SG www. onsemi.com 7 typical characteristics ? boost igbt & boost diode figure 13. typical reverse recovery energy vs. ic figure 14. gate voltage vs. gate charge i c , collector current (a) q g , gate charge (nc) 40 20 0 0 60 80 140 180 200 100 0 0 2 4 8 10 12 14 16 figure 15. igbt transient thermal impedance figure 16. diode transient thermal impedance e rr , reverse recovery energy ( j) v ge , gate voltage (v) 25 c 125 c v ge = 15 v v ce = 700 v r g = 4 v ce = 600 v i c = 40 a 60 80 100 300 500 on?pulse width (s) 1.0e?06 r(t), square?wave peak ( c/w) 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% on?pulse width (s) 1.0e?06 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 r(t), square?wave peak ( c/w) 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% 0.0001 0.0001 6 30 10 50 70 20 40 120 160 400
NXH80B120H2Q0SG www. onsemi.com 8 typical characteristics ? igbt protection diode and bypass diode figure 17. diode forward characteristic v f , forward voltage (v) 0.9 0.6 0.3 0 0 20 40 80 100 figure 18. diode transient thermal impedance i f , forward current (a) 25 c 150 c 1.5 60 on?pulse width (s) 1.0e?06 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 r(t), square?wave peak ( c/w) 0.001 0.01 0.1 1 10 single pulse dut = 50% 30% 10% 5% 1% 2% 0.0001 1.2 typical characteristics ? thermistor figure 19. thermistor characteristic temperature ( c) 105 65 45 25 0 4k 8k 12k 16k 24k resistance ( ) 125 20k 85
NXH80B120H2Q0SG www. onsemi.com 9 package dimensions pim22, 55x32.5 / q0boost case 180aj issue a
NXH80B120H2Q0SG www. onsemi.com 10 package dimensions pim20, 55x32.5 / q0pack case 180ab issue d
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