mechanical data e}? ? dice size a x :330um,a y :330um,b x :150um,b y :150um wafer size 6(good die:139,000pcs) chip thickness 165um(max) scribe line width 50um top metal ti - ni - ag back side metal ti - ni - ag for soldering parameter ^?u}o }v]?}v? so hv]? reverse stand - of voltage v rwm 5 v peak pulse power p pp tp=8/20us 75 w peak pulse current i pp tp=8/20us 5 a electrostatc discharge v esd iec61000 - 4 - 2 25(air) kv max.juncton temp. t j + 150 parameter ^?u}o }v]?}v d]vx d??x d?x hv]? breakdown voltage v br i t =1ma 6.1 8.5 v reverse leakage current i r v r =5v 0.03 ua clamping voltage v c i pp =1a i pp =5a 9.0 15.0 v diode capacitancd pin1 to 2 c j v r =0v f=1mh z 8.0 10.0 13.0 pf characteristics ta=25c chip tvs diode fm - 05vr6t10 notes: ( 1)sampling testng:no bad dice inking/guaranteed good die >93% (2)testng follow customer (3)tj=ta+rth(j - a)*(pf+pr),where rth(j - a) - thermal resistance,pf - forward power dissipaton, pr - revers power dissipaton (4)**for device testng ew1608g1 - fw - a futurewafer technology co.,ltd www.futurewafer.com.tw+886 - 3 - 3573583
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