050-7604 rev b 10-2005 APT35GN120L2DQ2(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250 a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 35a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 35a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) intergrated gate resistor symbol v (br)ces v ge(th) v ce(on) i ces i ges r gint units volts a na ? symbol v c es v ge i c1 i c2 i cm ssoa p d t j ,t stg t l APT35GN120L2DQ2(g) 1200 30 94 46 105 105a @ 1200v 379 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt w ebsite - http://www .a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest non-punch through (npt) field stop technology, these igbts have a very short, low amplitude tail current and low eoff. the trench gate design results in superior v ce(on) performance. easy paralleling results from very tight parameter distribution and slightly positive v ce(on) temperature coef?cient. built-in gate resistance ensures ultra-reliable o peration. low gate charge simpli?es gate drive design and minimizes losses. ? 1200v npt field stop ? trench gate: low v ce(on) ? easy paralleling ? 10s short circuit capability ? intergrated gate resistor: low emi, high reliability applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 1200 5 5.8 6.5 1. 4 1.7 2.1 1.9 200 tbd 600 6 12 00v APT35GN120L2DQ2 APT35GN120L2DQ2g* *g denotes rohs compliant, pb free terminal finish. ? g c e to-264 ma x c e g
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa scsoa t d(on) t r t d(of f) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 35a t j = 150c, r g = 2.2 ? 7 , v ge = 15v, l = 100h,v ce = 1200v v cc = 960v, v ge = 15v, t j = 125c, r g = 2.2 ? 7 i nductive switching (25c) v cc = 800v v ge = 15v i c = 35a r g = 2.2 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 35a r g = 2.2 ? 7 t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area short circuit safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 2500 150 120 9.5 220 15 130 105 10 24 22 300 55 tbd 2395 2315 24 22 365 100 tbd 3745 3435 unit pf v nc a s ns j ns j unit c/w gm min typ max .33 .61 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clam ped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r gint nor gate driver impedance. (mic4452) apt reserves the right to change, without notice, the speci?cations and information contained herein.
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) i c = 35a t j = 25c 250s pulse test<0.5 % duty cycle 120 100 80 60 40 20 0 100 80 60 40 20 0 4 3.5 3 2.5 2 1.5 1.0 0.5 0 1.10 1.05 1.00 0.95 0.90 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 3 2.5 2 1.5 1 0.5 0 140 120 100 80 60 40 20 0 v ce = 600v v ce = 240v v ce = 960v v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 15v 11v 9v 8v 12v 10v 7v 15v 11v 10v 9v 12v 8v 7v t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 70a i c = 35a i c = 17.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 70a i c = 35a i c = 17.5a 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 0 50 100 150 200 250 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 lead temperatur e limite d lead temperatur e limite d
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 800v r g = 2.2 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 800v v ge = +15v r g = 2.2 ? r g = 2.2 ? , l = 100 h, v ce = 800v v ce = 800v t j = 25c , t j =125c r g = 2.2 ? l = 100 h 30 25 20 15 10 5 0 80 70 60 50 40 30 20 10 0 12000 10000 8000 6000 4000 2000 0 25000 20000 15000 10000 5000 0 v ge = 15v t j = 25c , v ge = 15v v ce = 800v v ge = +15v r g = 2.2 ? v ce = 800v v ge = +15v r g = 2.2 ? e on2, 70a e off, 70a e off, 35a e on2, 35a e on2, 17.5a e off, 17.5a e on2, 70a e off, 70a e on2, 35a e off, 35a e on2, 17.5a e off, 17.5a v ce = 800v v ge = +15v t j = 125 c r g = 2.2 ? , l = 100 h, v ce = 800v 450 350 300 250 200 150 100 50 0 150 125 100 75 50 25 0 8000 7000 6000 5000 4000 3000 2000 1000 0 12000 10000 8000 6000 4000 2000 0 t j = 125c , v ge = 15v t j = 25c , v ge = 15v t j = 25c ,v ge = 15v t j = 125c ,v ge = 15v t j = 125c , v ge = 15v t j = 25 or 125c ,v ge = 15v 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 0 10 20 30 40 50 0 25 50 75 100 125
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) typical performance curves 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 4,000 1,000 500 100 50 10 120 100 80 60 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance v s collecto r-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400 figure 19b, transient thermal impedance model 10 20 30 40 50 60 70 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current 140 10 1 c 0es c res 0.5 0.1 0.05 f max = min (f ma x , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e of f f max2 = p diss = t j - t c r jc c ies t j = 125 c t c = 75 c d = 50 % v ce = 800v r g = 2.2 ? peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.163 0.168 0.00661f 0.181f power (watts ) rc mode l junctio n temp. ( c) case temperature. ( c)
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collectorvoltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collectorvoltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt40dq120 i c a d.u.t. v ce figure 21, inductive switching test circui t v cc *driver same type as d.u.t. i c v clam p 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circui t
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) typical performance curves characteristic / test conditions maximum average forward current (t c = 112c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 35a forward voltage i f = 70a i f = 35a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.7 3.28 2.06 apt35gp120l2dq2(g) 40 63 210 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 26 - 350 - 570 - 4 - - 430 - 2200 - 9 - - 210 - 3400 - 29 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 40a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 40a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 40a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c figure 25b, transient thermal impedance model z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.0442 c/w 0.242 c/w 0.324 c/w 0.00222 j/ c 0.00586 j/ c 0.0596 j/ c power (watts) junction temp ( c) rc model case temperature ( c)
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) t j = 125 c v r = 800v 20a 40a 80a 600 500 400 300 200 100 0 35 30 25 20 15 10 5 0 duty cycle = 0.5 t j = 175 c 80 70 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic paramete rs (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c 0 1 2 3 4 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 125 c v r = 800v 80a 20a 40a 120 100 80 60 40 20 0 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 t j = 125 c v r = 800v 80a 40a 20a t rr q rr q rr t rr i rrm 1.2 1.0 0.8 0.6 0.4 0.2 0.0 200 150 100 50 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200
050-7604 rev b 10-2005 APT35GN120L2DQ2(g) typical performance curves apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. e1 sac: tin, silver, copper to-264max (l2) package outline 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) gate dimensions in millimeters and (inches) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bs c 2-plcs. collector (cathode ) collector (cathode) emitter (anode) 4 3 1 2 5 5 zer o 1 2 3 4 di f /d t - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - reverse r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 33. diode test circui t figure 34, diode reverse recovery waveform and definitions 0.25 i rr m pearson 2878 current transformer di f /d t adjus t 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt10035lll
|
