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SIT8009B high frequency, low power oscillator ow power, standard frequency oscillator features ? 100% pin - to - pin drop - in replacement to quartz - based xo ? excellent total frequency stability as low as 20 ppm ? operating temperatur e from - 40c to 85c. for 125c and/ or - 55c options, refer to sit8919 and sit8921 ? low power consumption of 4.9 ma typical at 1.8v ? standby mode for longer battery life ? fast startup time of 5 ms ? lvcmos/hcmos compatible output ? industry - standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm ? i nstant samples with time machine ii and field p rogrammable o scillators ? rohs and reach compliant, pb - free, halogen - free and antimo ny - free ? for aec - q100 oscillators, refer to sit8924 and sit8 925 applications ? ideal for gpon/ e pon, network switches, routers , servers, embedded systems ? ideal for ethernet, pci - e, ddr, etc. electrical characteristics all min and max limits are specified over temperature and rated operating voltage with 15 pf output load unless otherwise stated. typical values are at 25c and nominal supply voltage. table 1 . electrical characteristics parameters symbol min. typ. max. unit condition frequency range output frequency range f 115 C 1 37 mhz frequency stability and aging frequency stability f_stab - 20 C +20 ppm inclusive of initial tolerance at 25c, 1 st year aging at 25c, and variations over operating temperature, rated power supply voltage and load. - 25 C +25 ppm - 50 C +50 ppm operating temperature range operating temperature range t_use - 20 C +70 c extended commercial - 40 C +85 c industrial supply voltage and current consumption supply voltage vdd 1.62 1.8 1.98 v contact sitime for 1.5v support 2.25 2.5 2.75 v 2.52 2.8 3.08 v 2.7 3.0 3.3 v 2.97 3.3 3.63 v 2.25 C 3.63 v current consumption idd C 6.2 7.5 ma no load condition, f = 125 mhz, vdd = 2.8v, 3.0v, 3.3v or 2.25 to 3.63v C 5.5 6.4 ma no load condition, f = 125 mhz, vdd = 2.5v C 4.9 5.6 ma no load condition, f = 125 mhz, vdd = 1.8v oe disable current i_od C C 4.2 ma vdd = 2.5v to 3.3v, oe = gnd, output in high - z state C C 4.0 ma vdd = 1.8v, oe = gnd, output in high - z state stan dby current i_std C 2.6 4.3 ? a st ? ? ? = gnd, vdd = 2.8v to 3.3v, output is weakly pulled down C 1.4 2.5 ? a st ? ? ? = gnd, vdd = 2.5v, output is weakly pulled down C 0.6 1.3 ? a st ? ? ? = gnd, vdd = 1.8v, output is weakly pulled down lvcmos output characteristics duty cycle dc 45 C 55 % all vdds rise/fall time tr, tf C 1 2 ns vdd = 2.5v, 2.8v, 3.0v or 3.3v, 20% - 80% C 1.3 2.5 ns vdd =1.8v, 20% - 80% C 0.8 2 ns vdd = 2.25v - 3.63v, 20% - 80% output high voltage voh 90% C C vdd ioh = - 4 ma (vdd = 3.0v or 3.3v) output low voltage vol C C 10% vdd iol = 4 ma (vdd = 3.0v or 3.3v) rev 1.04 january 30, 2018 www.sitime.com
sit8009 b high frequency, low power oscillator rev 1.04 page 2 of 17 www.sitime.com table 1. elect rical characteristics (continued) parameters symbol min. typ. max. unit condition input characteristics input high voltage vih 70% C C vdd pin 1, oe or st ? ? ? input low voltage vil C C 30% vdd pin 1, oe or st ? ? ? input pull - up impedance z_in 50 87 150 k ? ? pin 1 , oe logic high or logic low, or st logic high 2 C C m ? ? pin 1, st ? ? ? logic low startup and resume timing startup time t_start C C 5 ms measured from the time vdd reaches its rated minimum value enable/disable time t_oe C C 122 ns f = 137 mhz. for other frequencies, t_oe = 100 ns + 3 * cycles resume time t_resume C C 5 ms measured from the time st ? ? ? pin crosses 50% threshold jitter rms period jitter t_jitt C 1.9 3 ps f = 125 mhz, vdd = 2.5v, 2.8v, 3.0v or 3.3v C 1.8 4 ps f = 125 mhz, vdd = 1.8v peak - to - peak period jitter t_pk C 12 25 ps f = 125 mhz, vdd = 2.5v, 2.8v, 3.0v or 3.3v C 14 30 ps f = 125 mhz, vdd = 1.8v rms phase jitter (random) t_phj C 0.5 0.9 ps integration bandwidth = 900 khz to 7.5 mhz C 1.3 2 ps integration bandwidth = 12 khz to 20 mhz table 2 . pin description pin symbol functionality 1 oe/ st ? ? ? /nc output enable h [ 1 ] : specified frequency output l: output is high impedance. only output driver is disabled. standby h [ 1 ] : specified frequency output l: output is low (weak pull down). device goes to sleep mode. supply current reduces to i_std. no connect any voltage between 0 and vdd or open [ 1 ] : sp ecified frequency output. pin 1 has no function. 2 gnd power electrical ground 3 out output oscillator output 4 vdd power power supply voltage [ 2 ] top view figure 1 . pin assig n ments notes: 1. in oe or st ? ? ? mode, a pull - up resistor of 10 k or less is recommended if pin 1 is not externally driven. if pin 1 needs to be left floating, use the nc option. 2. a capacitor of value 0.1 f or higher between vdd and gnd is req uired. oe/ st/nc
sit8009 b high frequency, low power oscillator rev 1.04 page 3 of 17 www.sitime.com table 3 . absolute maximum limits attempted operation outside the absolute maximum ratings may cause permanent damage to the part. actual performance of the ic is only guaranteed within the operational specifications, not at absolute maximum ra t ings. parameter min. max. unit storage temperature - 65 150 c vdd - 0.5 4 v electrostatic discharge C 2000 v soldering temperature (follow standard pb free soldering guidelines) C 260 c junction temperature [ 3 ] C 150 c note: 3. exceeding this temperature for extended period of time may damage the device. table 4 . thermal consideration [ 4 ] package ? ja, 4 layer board (c/w) ? ja, 2 layer board (c/w) ? jc, bottom (c/w) 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 note: 4. refer to jesd51 for ? ja and ? jc definitions, and reference layout used to determine the ? ja and ? jc values in the above table. table 5 . maximum operating junction temper a ture [ 5 ] max operating temperature (ambient) maximum operating junction temperature 70 c 80 c 85 c 9 5c note: 5. datasheet specifications are not guar anteed if junction temperature e x ceeds the maximum operating junction temperature. table 6 . environmental compliance parameter condition/test method mechanical shock mil - std - 883f, method 2002 mechanical vibration mil - std - 883f, met hod 2007 temperature cycle jesd22, method a104 solderability mil - std - 883f, method 2003 moisture sensitivity level msl1 @ 260c
sit8009 b high frequency, low power oscillator rev 1.04 page 4 of 17 www.sitime.com test circuit and wavefor m [ 6 ] figure 2 . test circuit figure 3 . waveform note: 6. duty cycle is computed as duty cycle = th/period. timing diagrams figure 4 . startup timing (oe/ st ? ? ? mode) figure 5 . standby resume timing ( st ? ? ? mode only) figure 6 . oe enable timing (oe mode only) figure 7 . oe disable timing (oe mode only) note: 7. sit800 9 has no runt pulses and no glitch output during startup or resume. p o w e r s u p p l y 1 5 p f ( i n c l u d i n g p r o b e a n d f i x t u r e c a p a c i t a n c e ) t e s t p o i n t v o u t v d d 0 . 1 u f 1 k v d d o e / s t f u n c t i o n 4 3 1 2 8 0 % v d d h i g h p u l s e ( t h ) 5 0 % 2 0 % v d d p e r i o d t f t r l o w p u l s e ( t l ) 9 0 % v d d v d d p i n 4 v o l t a g e c l k o u t p u t t _ s t a r t t _ s t a r t : t i m e t o s t a r t f r o m p o w e r - o f f n o g l i t c h d u r i n g s t a r t u p [ 7 ] h z 5 0 % v d d v d d s t v o l t a g e c l k o u t p u t t _ r e s u m e t _ r e s u m e : t i m e t o r e s u m e f r o m s t h z 5 0 % v d d v d d o e v o l t a g e c l k o u t p u t t _ o e t _ o e : t i m e t o r e - e n a b l e t h e c l o c k o u t p u t h z 5 0 % v d d v d d o e v o l t a g e c l k o u t p u t t _ o e : t i m e t o p u t t h e o u t p u t i n h i g h z m o d e h z t _ o e
sit8009 b high frequency, low power oscillator rev 1.04 page 5 of 17 www.sitime.com 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 115 117 119 121 123 125 127 129 131 133 135 137 55 54 5 3 52 51 50 49 48 47 46 45 115 117 119 121 123 125 127 129 131 133 135 137 1.8 v 2.5 v 2.8 v 3.0 v 3.3 v 2.5 2.0 1.5 1.0 0.5 0.0 - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 2.5 2.0 1.5 1.0 0.5 0.0 - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 1.8 v 2.5 v 2.8 v 3.0 v 3.3 v performance plots [ 8 ] figure 8 . idd vs frequency figure 9 . frequency vs temperature , 1.8v figure 10 . rms period jitter vs frequency figure 11 . duty cycle vs frequency figure 12 . 20% - 80% rise time vs temperature figure 13 . 20% - 80% fall time vs temperature r m s perio d j i tt e r (p s ) 20 15 10 - 5 - 10 - 15 - 20 - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 dut1 dut6 dut2 dut7 dut3 dut8 dut4 dut9 dut5 dut10 i d d (ma) d u ty c yc l e (%) r i s e tim e ( n s) f a l l t i m e ( n s)
sit8009 b high frequency, low power oscillator rev 1.04 page 6 of 17 www.sitime.com 2.0 1.8 1.6 1.4 1.2 1.0 115 117 119 121 123 125 127 129 131 133 135 137 performance plots [ 8 ] figure 14 . rms integrated phase jitter random (12 khz to 20 mhz) vs frequency [ 9 ] figure 15 . rms integrated phase jitter random (900 khz to 20 mhz) vs frequency [ 9 ] notes: 8. all plots are measured with 15 pf load at room temperature, unless otherwise stated. 9. phase noise pl ots are measured with agilent e5052b signal source analyzer. integration range is up to 5 mhz for carrier frequencies below 40 mhz. i pj (p s) i p j ( p s)
sit8009 b high frequency, low power oscillator rev 1.04 page 7 of 17 www.sitime.com programmable drive strength the sit8009 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. benefits from the programmable drive strength feature are: ? improves system radiated electromagnetic inte r- fer e nce ( emi) by slowing down the clock rise/fall time . ? improves the downstream clock receivers (rx) jit ter by de creasing (speeding up) the clock rise/fall time. ? ability to drive large capacitive loads while maintaining full swing with sharp edge rates. for m ore detailed information about rise/fall time control and drive strength selection, see the sitime application notes section . emi reduction by slowing rise/fall time figure 16 show s the harmonic power reduction as the rise/fall times are increased (slowed down). the rise/fall times are expressed as a ratio of the clock period. for the ratio of 0.05, the signal is very close to a square wave. for the ratio of 0.45, the rise/fall time s are very close to near - triangular wav e form. these results, for example, show that the 11 th clock harmonic can be reduced by 35 db if the rise/fall edge is increased from 5% of the period to 45% of the period. figure 16 . harmonic emi reduction as a fun c tion of slower rise/fall time jitter reduction with faster rise/fall time power supply noise can be a source of jitter for the dow n- stream chipset. one way to reduce this jitter is to speed up the rise/fa ll time of the input clock. some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. refer to the rise/fall time tables (t able 7 to table 11) to determine the proper drive strength. high output load capability the rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. at any given drive strength, the rise/fall time becomes slow er as the output load increases. as an example, for a 3.3v sit8009 device with default drive strength setting, the typical rise/fall time is 0.46 ns for 5 pf output load. the typical rise/fall time slows down to 1 ns when the output load i n creases to 15 pf . one can choose to speed up the rise/fall time to 0.72 ns by then increasing the driven strength setting on the sit8009 to f . the sit8009 can support up to 30 pf or higher in maximum capacitive loads with up to 3 additional drive strength settings. ref er to the rise/fall time tables (table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. sit8009 drive strength selection tables 7 through 11 define the rise/fall time for a given capacitive load and supp ly voltage. 1. select the table that matches the sit8009 nominal supply voltage (1.8v, 2.5v, 2.8v, 3.0v, 3 .3v). 2. select the capacitive load column that matches the application requirement (5 pf to 30 pf) 3. under the capacitive load column, select the desired rise/fall times. 4. the left - most column represents the part number code for the corresponding drive strength . 5. add the drive strength code to the part number for ordering purposes. calculating maximum frequency based on the rise and fall time data given in table 7 through 11 , the maximum freq uency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: where trf_20/80 is the typical value for 20 % - 80% rise/ fall time. example 1 calculate f max for the following conditi on: ? vdd = 3. 3v ( table 11 ) ? capacitive load: 30 pf ? desired tr/f time = 1.46 ns (rise/fall time part number code = u) part number for the above example: drive strength code is inserted here. default setting is - SIT8009Bi u 12 - 33e - 136.986300 1 3 5 7 9 1 1 - 8 0 - 7 0 - 6 0 - 5 0 - 4 0 - 3 0 - 2 0 - 1 0 0 1 0 h a r m o n i c n u m b e r h a r m o n i c a m p l i t u d e ( d b ) t r i s e = 0 . 0 5 t r i s e = 0 . 1 t r i s e = 0 . 1 5 t r i s e = 0 . 2 t r i s e = 0 . 2 5 t r i s e = 0 . 3 t r i s e = 0 . 3 5 t r i s e = 0 . 4 t r i s e = 0 . 4 5 = 1 5 x t r f _ 2 0 / 8 0 m a x f r e q u e n c y
sit8009 b high frequency, low power oscillator rev 1.04 page 8 of 17 www.sitime.com rise/fall time (20% to 80%) vs c load tables table 7 . vdd = 1.8v rise/fall times for specific c load rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf t 0.93 n/ a n/a e 0.78 n/ a n/a u 0.70 1.4 8 n/a f or " - ": default 0.65 1.3 0 n/a table 8 . vdd = 2.5v rise/fall times for specific c load rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf r 1.45 n/a n/a b 1.09 n/a n/a t 0.62 1.28 n/a e 0.54 1.00 n/a u or " - ": default 0.43 0.96 n/a f 0.34 0.88 n/a table 9 . vdd = 2.8v rise/fall times for specific c load table 10 . vdd = 3.0v rise/fall times for specific c load table 11 . vdd = 3.3v rise/fall times for specific c load rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf r 1.16 n/a n/a b 0.81 n/a n/a t or " - ": default 0.46 1.00 n/a e 0.33 0.87 n/a u 0.28 0.79 1.46 f 0.25 0.72 1.31 note: 10. n/a in table 7 to t able 11 indicates that the resulting rise/fall time from the respective combination of the drive strength and output load doe s not provide rail - to - rail swing and is not available. rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf r 1.29 n/a n/a b 0.97 n/a n/a t 0.55 1.12 n/a e 0.44 1.00 n/a u or " - ": defaul t 0.34 0.88 n/a f 0.29 0.81 1.48 rise/fall time typ (ns) drive strength \ c load 5 pf 15 pf 30 pf r 1.22 n/a n/a b 0.89 n/a n/a t or " - ": default 0.51 1.00 n/a e 0.38 0.92 n/a u 0.30 0.83 n/a f 0.27 0.76 1.39
sit8009 b high frequency, low power oscillator rev 1.04 page 9 of 17 www.sitime.com pin 1 configuration option s (oe, st ? ? ? , or nc) pin 1 of the sit800 9 can be factory - programmed to support three modes: output enable (oe), standby ( st ? ? ? ) or no connect (nc). these modes can also be programmed with the time machine using field programmable devices. output enable (oe) mode in the oe mode, applying logic low to the oe pin only disable s the output driver and puts it in hi - z mode. the core of the device continues to operate normally. power consumption is reduced due to the inactivity of the output. when the oe pin is pulled hi gh, the output is typically enabled in <1s. standby ( st ? ? ? ) mode in the st ? ? ? mode, a device enters into the standby mode when pin 1 pulled low. all internal circuits of the device are turned off. the current is reduced to a standby current, typ i- cally in the range of a few a. when st ? ? ? is pulled high, the device goes through the resume process, which can take up to 5 ms. no connect (nc) mode in the nc mode, the device always operates in its normal mode and outputs the specified frequency regardless of th e logic level on pin 1. table 12 below summarizes the key relevant parameters in the operation of the device in oe, st ? ? ? , or nc mode. table 12 . oe vs. st ? ? ? vs. nc oe st ? ? ? nc active current 125 mhz (max, 1.8v) 5.6 ma 5.6 ma 5.6 ma oe disable current (max. 1.8v) 4.0 ma n/a n/a standby current (typical 1.8v) n/a 0.6 ua n/a oe enable time at 125 mhz (max) 124 ns n/a n/a resume t ime from standby (max, all frequency) n/a 5 ms n/a output driver in oe disable/standby mode high z weak pull - down n/a output on startup and resume the sit8009 comes with gated output. its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. in addition, the sit8009 has no runt, no glitch ou t put during startup or resume as shown in the waveform captures in figure 17 and figure 18. figure 17 . startup waveform vs. vdd figure 18 . startup waveform vs. vdd (zoomed - in view of figure 17) instant samples with time machine and field programmable oscillators sitime suppo rts a field programmable version of the sit8009 high frequency, high temperature oscillator for fast prototyping and real time customization of features. the field program mable devices (fp devices) are available for all five standard sit8009 package sizes and can be configured to ones exact specification using the time machine ii , an u sb powered mems oscillator programmer. customizable features of the sit8009 fp devices include ? frequencies between 115 mhz C 137 mhz ? three frequency stability options, 20 ppm, 25 ppm, 50 ppm ? two operating temperatures, - 20 to 70c or - 40 to 85c ? six s upply voltage options, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v and 2.25 to 3.63v continuous ? output drive strength ? oe, st ? ? ? , or nc mode for more information regarding sitimes field programmable solutions, see time machine ii and field programmable oscillators . sit8009 is factory - programmed per customer ordering codes for volume delivery.
sit8009 b high frequency, low power oscillator rev 1.04 page 10 of 17 www.sitime.com dimensions and patterns package size C dimensions (unit: mm ) [ 11 ] recommended land pa ttern (unit: mm) [ 12 ] 2.0 x 1.6 x 0.75 mm 2.5 x 2.0 x 0.75 mm 3.2 x 2.5 x 0.75 mm 5.0 x 3.2 x 0.75 mm 2 . 5 0 . 0 5 2 . 0 0 . 0 5 1 . 1 1 . 0 0 0 . 7 5 0 . 5 0 . 7 5 0 . 0 5 y x x x x # 1 # 2 # 4 # 3 # 2 # 1 # 3 # 4 1 . 9 1 . 1 1 . 0 1 . 5 3 . 2 0 . 0 5 2 . 5 0 . 0 5 2 . 1 0 . 9 0 . 7 0 . 9 0 . 7 5 0 . 0 5 # 1 # 2 # 4 # 3 # 2 # 1 # 3 # 4 y x x x x 2 . 2 1 . 9 1 . 4 1 . 2 5 . 0 0 . 0 5 3 . 2 0 . 0 5 2 . 3 9 0 . 8 1 . 1 5 1 . 1 0 . 7 5 0 . 0 5 # 1 # 2 # 4 # 3 # 2 # 1 # 3 # 4 y x x x x 2 . 5 4 1 . 5 1 . 6 2 . 2
sit8009 b high frequency, low power oscillator rev 1.04 page 11 of 17 www.sitime.com d imensions and patterns package size C dimensions (unit: mm ) [ 11 ] recommended land pattern (unit: m m) [ 12 ] 7. 0 x 5.0 x 0.90 mm n otes: 11. top marking: y denotes manufacturing origin and xxxx denotes manufacturing lot number. the value of y will depend on the as sembly location of the device. 12. a capacitor of v alue 0.1 f or higher between vdd and gnd is required. 1 . 4 1 . 1 y x x x x 5 . 0 0 . 0 5 0 . 9 0 0 . 1 0 7 . 0 0 . 0 5 5 . 0 8 2 . 6 2 . 2 2 . 0 5 . 0 8 3 . 8 1
sit8009 b high frequency, low power oscillator rev 1.04 page 12 of 17 www.sitime.com o rdering information the part no. guide is for reference only. to customize and build an exact part number, use the sitime part number generator . table 13 . ordering codes for supported tape & reel packing method device size (mm x mm) 16 mm t&r (3ku) 16 mm t&r (1ku) 12 mm t&r (3ku) 12 mm t&r (1ku) 8 mm t&r (3ku) 8 mm t&r (1ku) 2.0 x 1.6 C C C C d e 2.5 x 2.0 C C C C d e 3.2 x 2.5 C C C C d e 5.0 x 3.2 C C t y C C 7.0 x 5.0 t y C C C C SIT8009Bc - 1 2 - 18e - 125.123456d
sit8009 b high frequency, low power oscillator rev 1.04 page 13 of 17 www.sitime.com table 14 . additional information d ocument description download link time machine ii mems oscillator programmer http://www.sitime.com/support/time - machine - oscillator - programmer field programmable oscillators devices that can be programmable in the field by time machine ii http://www.sitime.com/products/field - programmable - oscillators manufacturing notes tape & reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/manufacturing - notes qualification reports rohs report, reliability reports, composition reports http://w ww.sitime.com/support/quality - and - reliability performance reports additional performance data such as phase noise, current consumption and jitter for selected frequencies ht tp:// www.sitime.com/support/performance - measurement - report termination techniques termination design recommendations http://www.sitime.com/support/application - notes layout techniques layout recommendations http://www.sitime.com/support/application - notes table 15 . revisi o n history revision release date change su mmary 1.0 06/10/2014 final production release 1.01 05/07/2015 revised the electrical characteristics, timing diagrams and performance plots revised 2016 package diagram 1.02 06/18/2015 added 16 mm t&r informatio n to table 13 revised 12 mm t&r information to table 13 1.03 08/30/2016 revised part number example in the ordering information 1.04 01/30/2018 r evise d 2520 package land pattern updated logo and company add ress, other page layout changes sitime corporation , 5451 patrick henry drive , santa clara , ca 95054 , usa | phone: + 1 - 408 - 328 - 4400 | fax: +1 - 408 - 328 - 4439 ? sitime corporation 2014 - 2018 . the information contained herein is subject to change at any time witho ut notice. sitime assumes no responsibility or liability for any loss, damage or defect of a product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a sitime produc t, (ii) misuse or abuse including static di scharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or alte red during assembly and are not capable of being tested by sitime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. disclaimer: sitime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and al l express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common - law duties relating to accuracy or lack of negligence, with respect to this material, any sitime product and any product documentation. products sold by sitime are not suitable or intended to be used in a life support application or c omponent, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below. critical use exclusion policy bu yer agrees not to use sitime's products for any application or in any components used in life support devices or to operate n uclear facilities or for use in other mission - critical applications or components where human life or property may be at stake. si time owns all rights, title and interest to the intellectual property related to sitime's products, including any software, f irmware, copyright, patent, or trademark. the sale of sitime products does not convey or imply any license under patent or other ri ghts. sitime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by sitime. unless otherwise agreed to in writing by sitime, any reproduction, modification, t ranslation, compilation, or representation of this material shall be strictly prohibited.
silicon mems outperforms quartz rev 1.04 page 14 of 17 www.sitime.com supplemental information the supplemental information section is not part of the datasheet and is for informational purp oses only.
silicon mems outperforms quartz rev 1.04 page 15 of 17 www.sitime.com best reliability silicon is inherently more reliable than quartz. unlike quartz suppliers, sitime has in - house mems and analog cmos expertise, which allows sitime to develop the most reliable products . figure 1 shows a comparison with quartz technology. why is sitime best in class: ? sitimes mems resonators are vacuum sealed using an advanced episeal? process, which eliminates foreign particles and improves long term aging and r e liability ? world - class mems and cmos design expertise figure 1 . reliability comparison [1] best agin g unlike quartz, mems oscillators have excellent long term aging performance which is why every new sitime product specifies 10 - year aging. a comparison is shown in figure 2 . why is sitime best in class: ? sitimes me ms resonators are vacuum sealed using an advanced episeal? process, which eliminates foreign particles and improves long term aging and r e liability ? inherently better immunity of electrostatically driven mems resonator figure 2 . aging comparison [2] best electro magnetic susceptibility (ems) sitimes oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in figure 3 . why is sitime best in class: ? internal differential architecture for best common mode noise rejection ? electrostatically driven mems re sonator is more immune to ems figure 3 . electro magnetic susceptibility (ems) [3] best power supply noise reje ction sitimes mems oscillators are more resilient against noise on the power supply. a comparison is shown in figure 4 . why is sitime best in class: ? on - chip regulators and internal differential architecture for com mon mode noise rejection ? mems resonator is paired with advanced analog cmos ic figure 4 . power supply noise rejection [4] 2 8 3 8 1 , 1 4 0 e p s n i d t s i t i m e r e l i a b i l i t y ( m i l l i o n h o u r s ) s i t i m e o s c i l l a t o r q u a r t z o s c i l l a t o r 1.5 3.5 3 8 0 2 4 6 8 10 1-year 10-year aging ( ppm) mems vs. quartz aging episeal mems oscillator quartz oscillator s i t i m e s l a b k y c a c w e p s n t x c s i t i m e k y c a e p s n
silicon mems outperforms quartz rev 1.04 page 16 of 17 www.sitime.com best vibratio n robustness high - vibration environments are all around us. all electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. figure 5 shows a comparison of vibration robustness. why is sitime best in class: ? the moving mass of sitimes mems resonators is up to 3000 times smaller than quartz ? center - anchored mems resonator is the most robust design figure 5 . vibration robust ness [5] best shock robustness sitimes oscillators can withstand at least 50,000 g shock. they all maintain their electrical performance in operation during shock events. a comparison with quartz devices is shown in figure 6 . why is sitime best in class: ? the moving mass of sitimes mems resonators is up to 3000 times smaller than quartz ? center - anchored mems resonator is the most robust design figure 6 . shock robustness [6] figure labels: ? txc = txc ? epson = epsn ? connor winfield = cw ? kyocera = kyca ? silabs = slab ? sitime = episeal mems s i t i m e s l a b k y c a c w e p s t x c 0.0 0.1 1.0 10.0 100.0 10 100 1000 vibration sensitivity (ppb/g) vibration frequency (hz) txc eps cw kyca slab episeal mems s i t i m e s l a b k y c a c w e p s n t x c
silicon mems outperforms quartz rev 1.04 page 17 of 17 www.sitime.com notes: 1. data source: reliability documents of named companies. 2. data source: sitime and quartz oscillator devices datasheets. 3. test conditions for electro magnetic susceptibility (ems): ? according to iec en61000 - 4.3 (electromagnetic compatibility standard) ? field stre ngth: 3v/m ? radiated signal modulation: am 1 khz at 80% depth ? carrier frequency scan: 80 mhz C 1 ghz in 1% steps ? antenna polarization: vertical ? dut position: center aligned to antenna devices used in this test: label manufacturer part number technology epi seal mems sitime sit9120ac - 1d2 - 33e156.250000 mems + pll epsn epson eg - 2102ca156.2500m - phpal3 quartz, saw txc txc bb - 156.250mbe - t quartz, 3 rd overtone cw conner winfield p123 - 156.25m quartz, 3 rd overtone kyca avx kyocera kc7050t156.250p30e00 quartz, saw slab silab 590ab - bdg quartz, 3 rd overtone + pll 4. 50 mv pk - pk sinusoidal voltage. devices used in this test: label manufacturer part number technology episeal mems sitime sit8208ai - 33 - 33e - 25.000000 mems + pll ndk ndk nz2523sb - 25.6m quartz kyca avx kyoc era kc2016b25m0c1ge00 quartz epsn epson sg - 310scf - 25m0 - mb3 quartz 5. devices used in this test: same as ems test stated in note 3. 6. test conditions for shock test: ? mil - std - 883f method 2002 ? condition a: half sine wave shock pulse, 500 - g, 1ms ? continuous frequency measurement in 100 s gate time for 10 seconds devices used in this test: same as ems test stated in note 3. 7. additional data, including setup and detailed results, is available upon request to qualified customer. please contact pro d u ctsupp or t@sitime.com .

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