ret y rt - low power loss, high efficiency - ideal for automated placement - ultra fast recovery time for high efficiency - high surge current capability - halogen-free according to iec 61249-2-21 definition sy m bol u nit v rrm v v rms v v dc v i f(av) a trr ns cj pf t j o c t stg o c document number ds_d1310015 version:d13 o c/w note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. 1 50 typical junction capacitance (note 3) 25 typical thermal resistance r jl r ja 2075 150 200 70 105 140 100 150 200 ESH2BA thru esh2d a surface mount ultra fast rectifiers feat u res - moisture sensitivity level : level 1, per j-std-020 taiwan semiconductor - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a case do-214ac(sma) do-214ac(sma) molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free, rohs compliant terminal matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test polarity indicated by cathode band weight 0.07 gram (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract erst i cs (t a =25 unless otherwise noted) param et er maximum repetitive peak reverse voltage maximum rms voltage esh 2 ba esh 2 ca esh 2 da 100 maximum dc blocking voltage maximum average forward rectified current 1 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 50 mj a maximum instantaneous forward voltage (note 1) @ 1 a v f v 0.90 maximum reverse current @ rated vr t j =25 t j =100 t j =125 i r a 10 note 1 pulse test with pw=300u sec, 1% duty cycle operating junction temperature range - 55 to + 175 storage temperature range - 55 to + 175 maximum reverse recovery time (note 2) 25 pulse energy in avalanche mode, non repetitive (inductive load switch off), l=120mh, tj=25 e rsm 20 downloaded from: http:///
part n o. note 1: "xx" defines voltage from 100v (ESH2BA) to 200v (esh2da) part n o. esh2da esh2da (ta=25 unless otherwise noted) document number ds_d1310015 version:d13 orderi n g i n form at i on r2 sma 7500 / 13" paper reel m2 ESH2BA thru esh2d a taiwan semiconductor pack i n g code green com pou n d code pack age pack i n g sma 7500 / 13" plastic reel f3 folded sma 1800 / 7" plastic reel f2 folded sma 7500 / 13" paper reel suffix "g" sma f4 folded sma 7500 / 13" plastic reel preferred p/n pack i n g code green com pou n d code descri pt i on esh2xa (note 1) r3 1800 / 7" plastic reel ex am ple rat i n gs an d ch aract eri st i cs cu rv es esh2da r3 r3 esh2da r3g r3 g green compound 0 0.5 1 1.5 0 25 50 75 100 125 150 175 average forward current (a) lead temperature ( o c) fig.1 forward current derating curve resister or inductive load 0 10 20 30 40 50 60 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.01 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 instantaneous reverse current (ua) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics tj=25 tj=125 tj=75 0.01 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics pulse width=300us 1% duty cycle downloaded from: http:///
min max min max a 1.27 1.58 0.050 0.062 b 4.06 4.60 0.160 0.181 c 2.29 2.83 0.090 0.111 d 1.99 2.50 0.078 0.098 e 0.90 1.41 0.035 0.056 f 4.95 5.33 0.195 0.210 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = specific device code g = green compound yw = date code f = factory code document number ds_d1310015 version:d13 ESH2BA thru esh2d a taiwan semiconductor pack age ou t li n e di m en si on s dim. unit(mm) unit(inch) su ggest ed pad lay ou t symbol unit(mm) a1 . 6 8 b1 . 5 2 m ark i n g di agram c3 . 9 3 d2 . 4 1 e5 . 4 5 0 10 20 30 40 50 60 0.1 1 10 100 capacitance (pf) reverse voltage (v) fig. 5 typical junction capacitance downloaded from: http:///
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