jmnic product specification silicon pnp power transistors 2sb512 description ? with to-220 package ? low collector saturation voltage applications ? for low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a p c collector power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon pnp power transistors 2sb512 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ,i b =0 -60 v v (br)cbo collector-base breakdown voltage i c =-1ma ,i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-1ma ,i c =0 -6 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -1.0 v v besat base-emitter saturation voltage i c =-2a; i b =-0.2a -1.5 v i cbo collector cut-off current v cb =-40v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 | a h fe dc current gain i c =-0.5a ; v ce =-5v 60 320 f t transition frequency i c =-0.5a ; v ce =-10v 3 mhz
jmnic product specification 3 silicon pnp power transistors 2sb512 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
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