www.goodark.com page 1 of 4 rev.1.2 ssf3 2 e0e 30v n-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity s32e ssf32e0e sot-523 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v i d 0.1 i d (7 0 ) 0.07 a drain current-continuous@ current-pulsed (note 1) i dm 0.4 a maximum power dissipation p d 0.2 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 400 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 30 v general features v ds =30v,i d = 0.1a r ds(on) < 8 @ v gs =4v r ds(on) < 13 @ v gs =2.5v esd rating 1000v hbm high power and current handing capability lead free product surface mount package schematic d iagram marking and p in assignment sot - 52 3 t op v iew application s direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. battery operated systems solid-state relays
www.goodark.com page 2 of 4 rev.1.2 ssf3 2 e0e 30v n-channel mosfet zero gate voltage drain current i dss v ds =30v,v gs =0v 1 a v gs =5v,v ds =0v 100 na v gs =10v,v ds =0v 150 na gate-body leakage current i gss v gs =20v,v ds =0v 10 ua gate-source breakdown voltage bv gso v ds =0v, i g =250ua 20 v on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 0.8 1.5 v v gs =4v, i d =0.01a 5 8 drain-source on-state resistance r ds(on) v gs =2.5v, i d =0.001a 7 13 forward transconductance g fs v ds =3v,i d =0.01a 0.02 s dynamic characteristics (note4) input capacitance c lss 45 pf output capacitance c oss 12 pf reverse transfer capacitance c rss v ds =5v,v gs =0v, f=1.0mhz 7 pf switching characteristics (note 4) turn-on delay time t d(on) 15 ns turn-off delay time t d(off) v dd =5v,v gs =5v, r gen =10 r l =500 i d =0.01a 75 ns drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =0.01a 1.3 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
www.goodark.com page 3 of 4 rev.1.2 ssf3 2 e0e 30v n-channel mosfet typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms r(t),normalized effective transient thermal impedance figure 3 normalized maximum transient thermal impedance square wave pluse duration(sec)
www.goodark.com page 4 of 4 rev.1.2 ssf3 2 e0e 30v n-channel mosfet sot-523 package information dimensions in millimeters (unit: mm) notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters symbol min. max. a 0.700 0.900 a1 0.000 0.100 a2 0.700 0.800 b1 0.150 0.250 b2 0.250 0.350 c 0.100 0.200 d 1.500 1.700 e 0.700 0.900 e1 1.450 1.750 e 0.500typ e1 0.900 1.100 l 0.400ref l1 0.260 0.460 0 8
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