june 20 10 . version 1 .0 magnachip semiconductor ltd . 1 mds 1 951 C single n - channel trench mosfet 60v absolute maximu m ratings ( t a =25 o c unless otherwise noted ) characteristics symbol rating unit drain - source voltag e v dss 60 v gate - source voltage v gss 20 v continuous drain current (2) t a =25 o c i d 6.0 a t a = 7 0 o c 4. 8 a pulsed drain current i dm 30 a power dissipation for single operation t a =25 o c p d 2. 5 w t a = 7 0 o c 1. 6 single pulse avalanche energ y (3) e as 25 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristic characteristics symbol rating unit thermal resistance, junction - to - ambient (steady - state) (1) r ja 50 o c/w thermal resistance, junction - to - case r jc 25 md s 1 951 single n - channel trench mosfet 60 v, 6 a , 45 m general description the mds 1 951 uses advanced magnachips applications ? inverters ? general purpose applications features ? v ds = 60 v ? i d = 6 a @v gs = 10v ? r ds(on) < 45 m @ v gs = 10v < 55 m @ v gs = 4.5v 1( s ) 2(s) 3( s ) 4( g ) 8( d ) 7( d ) 6(d) 5( d ) d g s
june 20 10 . version 1 .0 magnachip semiconductor ltd . 2 mds 1 951 C single n - channel trench mosfet 60v ordering information p art number temp. range package packing rohs status mds 1 951urh - 55~150 o c so ic - 8 tape & reel h alogen free electrical characteristics (t a =25 o c unless otherwise noted) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 60 - - v gate thr eshold voltage v gs(th) v ds = v gs , i d = 250a 1.0 1.9 3.0 zero gate voltage drain current i dss v ds = 60 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 4.5 a - 3 7 45 m v gs = 4.5v, i d = 3.0 a - 4 4 55 forward transconductance g fs v ds = 10 v, i d = 3.3 a - 11 - s dynamic characteristics total gate charge ( v gs =10v) q g v ds = 30 v, i d = 4.5 a, v gs = 10 v - 9.0 10.5 nc total gate charge ( v gs =4.5v) 4. 4 gate - source charge q gs - 1.5 - gate - drain charge q gd - 2.0 - input capacitance c iss v ds = 30 v, v gs = 0v, f = 1.0mhz - 420 - pf reverse transfer capacitance c rss - 25 - output capacitance c oss - 50 - turn - on delay time t d(on) v gs = 10v ,v ds = 30 v, r l = 6.7 , r gen = 5 - 4.5 - ns turn - on rise time t r - 20 - t u r n - off delay time t d(off) - 15 - t u r n - off fall time t f - 9.5 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 1 .0 a, v gs = 0v - 0. 7 1. 1 v body diode rever se recovery time t rr i f = 4.5 a, di/dt = 100a/ s - 21 30 ns body diode reverse recovery charge q rr - 25 - nc note : 1. surface mounted rf4 board with 2oz. copper. 2. p d is based on t j(max) =150c a. p d (t c =25 c ) is based on r jc , b. p d (t a =25 c ) is ba sed on r j a, t<10sec 3. starting t j = 25 c , l=1mh, v gs =10v,i d = 5 a, v dd =30v , ra ted v ds =60v
june 20 10 . version 1 .0 magnachip semiconductor ltd . 3 mds 1 951 C single n - channel trench mosfet 60v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation w ith drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0 1 2 3 4 5 0 5 10 15 vgs=10.0v vgs=5.0v vgs=4.0v vgs=3.0v i d (a) v ds (volts) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v gs =4.5v i d =3.0a v gs =10v i d =4.5a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 4 6 8 10 0 40 80 120 160 t a = 25 t a = 125 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 1 2 3 4 5 0 5 10 15 20 125 25 i d (a) v gs (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 125 25 -i s [a] -v sd [v] 0 5 10 15 20 25 30 10 20 30 40 50 60 70 80 90 100 110 120 v gs =10v v gs =4.5v r ds(on) [m? ] i d [a]
june 20 10 . version 1 .0 magnachip semiconductor ltd . 4 mds 1 951 C single n - channel trench mosfet 60v fig.7 gate charge characteristics fig.8 capacitance characteristics f ig.9 maximum safe operating area fig.10 maximum drain current v s. ambient temperature fig.11 transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 0.01 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z ja * r ja (t) + t a r ja =50 /w single pulse d=0.5 0.02 0.2 0.05 0.1 z ja , normalized thermal response [t] t 1 , rectangular pulse duration [sec] 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 note : i d = 4.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 c rss c oss c iss capacitance [pf] v ds [v] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 i d , drain current [a] t a , ambient temperature [ ] 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 1s 10s 100ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse r ja =50 /w t a =25 i d [a] v ds [v]
june 20 10 . version 1 .0 magnachip semiconductor ltd . 5 mds 1 951 C single n - channel trench mosfet 60v physical dimensions 8 leads soic dimensions are in millimeters unless otherwise specified
june 20 10 . version 1 .0 magnachip semiconductor ltd . 6 mds 1 951 C single n - channel trench mosfet 60v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or system s in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registere d trademark of magnachip semiconductor ltd.
|
