eml4 / uml4n transistors rev.c 1/4 general purpose transistor (isolated transistor and diode) eml4 / uml4n 2sc5585 and rb521s-30 are housed independ ently in a emt5 or umt5 package. z applications dc / dc converter motor driver z features 1) tr : low v ce (sat) di : low v f 2) small package z structure pnp silicon epitaxial planar transistor schottky barrier diode the following characteristics apply to both di1 and tr2. z equivalent circuit tr2 di1 (1) (2) (3) (4) (5) z packaging specifications type eml4 emt5 l4 t2r 8000 uml4n umt5 l4 tr 3000 package marking code basic ordering unit(pieces) z dimensions (unit : mm) each lead has same dimensionseach lead has same dimensions rohm : emt5 umt5 emt5 abbreviated symbol : l4 rohm : umt5eiaj : sc-88a abbreviated symbol : l4 0.9 0.15 0.1min. 0.7 2.1 1.3 0.65 2.0 0.2 1.25 0.65 ( 4 ) ( 1 ) ( 5 ) ( 2 ) ( 3 ) 1pin mark 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 3 ) ( 5 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 1pin mark downloaded from: http:///
eml4 / uml4n transistors rev.c 2/4 z absolute maximum ratings (ta=25 c) di1 parameter symbol i o i fsm v r tj limits 200 1 30 125 unit ma av c average rectified forward currentf orward current surge peak (60h z , 1 ) reverse voltage (dc)junction temperature tr2 parameter symbol v cbo v ceo v ebo i c i cp pd tj limits 15 12 6 500 120150 1 ? unit vv v ma a mw c ? each terminal mounted on a recommended. collector-base voltagecollector-emitter voltage emitter-base voltage collector current power dissipation junction temperature di1 / dtr2 parameter symbol pd tstg limits 150 55 to +125 unit mw ? ? each terminal mounted on a recommended. c power dissipationstorage temperature z electrical characteristics (ta=25 c) di1 parameter symbol min. typ. max. unit conditions 0.50 v f 0.40 v i f =200ma v r =10v forward voltage i r 4.0 30 a reverse current tr2 parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0ma, f = 1mhz f t 260 mhz v ce = 2v, i e = 10ma, f = 100mhz bv ceo 12 v i c = 1ma bv cbo 15 v i c = 10 a bv ebo 6 v i e = 10 a i cbo 100 na v cb = 15v i ebo 100 na v eb = 6v v ce(sat) 100 250 mv i c = 200ma, i b = 10ma h fe 270 680 v ce = 2v, i c = 10ma cob 6.5 pf transition frequency collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current collector-emitter saturation voltage dc current gain collector output capacitance downloaded from: http:///
eml4 / uml4n transistors rev.c 2/4 ' 0 3 8 " 3 % 7 0 - 5 " ( & 7 ' n 7 7 ' * ' $ ) " 3 " $ 5 & |