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datasheet www.rohm.com ? 2012 rohm co., ltd. all rights reserved. rsq015n06 nch 60v 1.5a power mosfet junction temperature t j 150 c range of storage temperature t stg 55 to +150 c power dissipation gate - source voltage v gss 20 v p d *3 1.25 w p d *4 0.6 w continuous drain current i d *1 1.5 a pulsed drain current i d,pulse *2 6 a drain - source voltage v dss 60 v taping code tr marking px absolute maximum ratings (t a = 25c) parameter symbol value unit packaging specifications type packaging taping application reel size (mm) 180 dc/dc converters tape width (mm) 8 basic ordering unit (pcs) 3,000 features inner circuit 1) low on - resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt6). 4) pb-free lead plating ; rohs compliant outline v dss 60v r ds(on) (max.) 290m i d 1.5a p d 1.25w (1) (2) (3) (4) (5) (6) (1) drain (2) drain (3) gate (4) source (5) drain (6) drain tsmt6 1 esd protection diode 2 body diode 1/11 2012.06 - rev.b 2016.06 - rev.b 5) aec-q101 qualified fra downloaded from: http:///
www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet rsq015n06 *1 limited only by maximum temperature allowed. *2 pw 10 s, duty cycle 1% *3 mounted on a seramic board (30300.8mm) *4 mounted on a fr4 (15200.8mm) f = 1mhz, open drain static drain - source on - state resistance r ds(on) *5 s - 10 - transconductance g fs *5 v ds = 10v, i d = 1.5a 1.0 2.4 - v gs =4.5v, i d =1.5a - 240 330 v gs =4v, i d =1.5a - 255 350 v gs =10v, i d =1.5a, t j =125c v gs =10v, i d =1.5a - 210 290 - 360 510 v gate threshold voltage temperature coefficient v (gs)th t j i d = 1ma referenced to 25c - 4.4 - mv/c gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 1.0 - 2.5 m - - a gate - source leakage current i gss v gs = 20v, v ds = 0v - - 10 a zero gate voltage drain current i dss v ds = 60v, v gs = 0v - - 1 thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *4 - - 208 c/w thermal resistance, junction - ambient r thja *3 - - 100 c/w gate input resistannce r g electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. v breakdown voltage temperature coefficient v (br)dss t j i d = 1ma referenced to 25c - 67 - mv/c drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 60 2/11 2012.06 - rev.b ra 2016.06 - rev.b downloaded from: http:/// www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet rsq015n06 *5 pulsed a forward voltage v sd *5 v gs = 0v, i s = 1.5a - - 1.2 v inverse diode continuous, forward current i s *1 t a = 25c - - 1 max. - 0.8 - gate - drain charge q gd *5 - 0.5 - body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. nc v dd c 30v, i d = 1.5a v gs = 10v - 3.5 - gate - source charge q gs *5 v dd c 30v, i d = 1.5a v gs = 5v v dd c 30v, i d = 1.5a v gs = 5v - 2 - total gate charge q g *5 - gate charge characteristics (t a = 25c) parameter symbol conditions values t f *5 r g = 10 - 10 unit min. typ. max. turn - on delay time t d(on) *5 v dd c 30v, v gs = 10v - 6 - ns rise time t r *5 i d = 0.7a - 9 - turn - off delay time t d(off) *5 r l = 42.8 - 15 - fall time pf output capacitance c oss v ds = 10v - 28 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 110 - - 12 - electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 3/11 2012.06 - rev.b ra 2016.06 - rev.b downloaded from: http:/// www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet rsq015n06 electrical characteristic curves 0.1 1 10 100 1000 0.0001 0.01 1 100 t a =25oc single pulse fig.1 power dissipati on derating curve power dissipation : p d /p d max. [%] junction temperature : tj [ r c] fig.2 maximum safe operating area drain current : -i d [a] drain - source voltage : v ds [v] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] fig.4 single pulse maxmum power dissipation peak transient power : p(w) pulse width : p w [s] 0 20 40 60 80 100 120 05 01 0 01 5 0 200 0.01 0.1 1 10 0.1 1 10 100 operation in this area is limited by r ds (on) (v gs = 10v h p w = 100 s p w = 10ms p w = 1ms dc operation t a =25oc single pulse mounted on a ceramic board. (30mm ?b 30mm ?b 0.8mm) 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 t a =25oc single pulse rth(ch -a)=100oc/w rth(ch -a)(t)=r(t) ?b rth(ch-a) mounted on ceramic board (30mm ?b 30mm ?b 0.8mm) top d=1 d=0.5 d=0.1 d=0.05 d=0.01 bottom signle 4/11 2012.06 - rev.b ra 2016.06 - rev.b downloaded from: http:/// www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet rsq015n06 electrical characteristic curves fig.5 typical output characteristics(i) drain current : -i d [a] drain - source voltage : -v ds [v] fig.6 typical output characteristics(ii) drain - source voltage : -v ds [v] avalanche energy : e as / e as max. [%] 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 v gs = 2.4v t a =25oc pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v 0 0.5 1 1.5 2 2.5 3 024681 0 v gs = 2.4v t a =25oc pulsed v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v 5/11 2012.06 - rev.b ra 2016.06 - rev.b downloaded from: http:/// www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet rsq015n06 electrical characteristic curves fig.7 breakdown voltage >>> vs. junction temperature drain - source breakdown voltage : v (br)dss [v] junction temperature : t j [ r c ] fig.8 typical transfer characteristics gate - source voltage : v gs [v] fig.9 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ r c ] fig.10 transconductan ce vs. drain current transconductance : g fs [s] drain current : i d [a] drain current : i d [a] 0 30 60 90 120 -50 0 50 100 150 v gs =0v i d =1ma pulsed 0.001 0.01 0.1 1 10 0123 v ds = 10v pulsed t a = 125 r & |