RQ3E100AT pch -30v -31a power mosfet datasheet l l outline v dss -30 v r ds(on) (max.) 11.4 m i d 31 a hsmt8 p d 17 w l l inner circuit l l features 1) low on - resistance 2) high power small mold package (hsmt8) 3) pb-free lead plating ; rohs compliant 4) halogen free l l packaging specifications type packing embossed tape reel size (mm) 330 l l application tape width (mm) 12 switching basic ordering unit (pcs) 3000 taping code tb marking e100at l l absolute maximum ratings (t a = 25c ,unless otherwise specified) parameter symbol value unit drain - source voltage v dss -30 v continuous drain current t c = 25c i d *1 31 a t a = 25c i d 10 a pulsed drain current i dp *2 40 a gate - source voltage v gss 20 v avalanche current, single pulse i as *3 -10 a avalanche energy, single pulse e as *3 36 mj power dissipation p d *1 17 w p d *4 2.0 w junction temperature t j 150 operating junction and storage temperature range t stg -55 to + 150 www.rohm.com ? 2017 rohm co., ltd. all rights reserved. 1/10 20180219 - rev. 001
RQ3E100AT datasheet thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc *1 - - 7.3 /w thermal resistance, junction - ambient r thja *4 - - 62.5 /w electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0 v, i d = -1 ma -30 - - v breakdown voltage temperature coefficient v (br)dss i d = -1 ma - -22 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = -30 v, v gs = 0 v - - -1 a gate - source leakage current i gss v gs = 20 v, v ds = 0 v - - 100 na gate threshold voltage v gs(th) v ds = v gs , i d = -1 ma -1.0 - -2.5 v gate threshold voltage temperature coefficient v gs(th) i d = -1 ma - 2.9 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *5 v gs = -10 v, i d = -10 a - 9.0 11.4 m v gs = -4.5 v, i d = -10 a - 13.1 16.7 gate resistance r g f=1mhz, open drain - 3.1 - forward transfer admittance |y fs | *5 v ds = -5 v, i d = -10 a 10 - - s *1t c =25 , limited only by maximum temperature allowed. *2 pw Q 10 s, duty cycle Q 1% *3 l ? 0.5mh, v dd = -15v, r g = 25 , starting t j = 25 fig.3-1,3-2 *4 mounted on a cu boad (40400.8mm) *5 pulsed www.rohm.com ? 2017 rohm co., ltd. all rights reserved. 2/10 20180219 - rev. 001
RQ3E100AT datasheet electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0 v - 1900 - pf output capacitance c oss v ds = -15 v - 340 - reverse transfer capacitance c rss f = 1 mhz - 265 - turn - on delay time t d(on) *5 v dd ? -15 v,v gs = -10 v - 12 - ns rise time t r *5 i d = -5.0 a - 14 - turn - off delay time t d(off) *5 r l ? 3.0 - 85 - fall time t f *5 r g = 10 - 50 - gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *5 v dd ? -15 v i d = -10 a v gs = -10 v - 42 - nc v gs = -4.5 v - 21 - gate - source charge q gs *5 - 6.3 - gate - drain charge q gd *5 - 7.8 - body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. continuous forward current i s t a = 25 - - -1.67 a pulse forward current i sp *2 - - -40 a forward voltage v sd *5 v gs = 0 v, i s = -1.67 a - - -1.2 v www.rohm.com ? 2017 rohm co., ltd. all rights reserved. 3/10 20180219 - rev. 001
RQ3E100AT datasheet electrical characteristic curves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2017 rohm co., ltd. all rights reserved. 4/10 20180219 - rev. 001
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