www.irf.com 1 02/22/11 IRG7IA19UPBF descriptionthis igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak currentcapability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. advanced trench igbt technology optimized for sustain and energy recoverycircuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
e c g n-channel gc e gate collector emitter
absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v i c @ t c = 100c continuous collector, v ge @ 15v a i nominal nominal current i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range c soldering temperature for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case CCC 3.6 r cs case-to-sink, flat, g reased surface 0.50 c/w r ja junction-to-ambient, typical socket mount 65 wt weight 2.0 g max. 15 170 30 30 15 300 -40 to + 150 3514 0.27 features v ce min 360 v v ce(on) typ. @ i c = 30a 1.49 v i rp max @ t c = 25c 170 a t j max 150 c key parameters pd-96356 downloaded from: http:///
2 www.irf.com half sine wave with duty cycle <= 0.05, ton=2sec. r q is measured at t j of approximately 90c. pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 360 CCC CCC v ? v ces / ? t j breakdown voltage temp. coefficient CCC 0.34 CCC v/c CCC 1.26 1.52 CCC 1.41 CCC CCC 1.49 CCC 1.65 CCC v CCC 2.12 CCC 2.93 CCC 1.51 CCC v ge(th) gate threshold voltage 2.2 CCC 4.7 v ? v ge ( th ) / ? t j gate threshold voltage coefficient CCC -10 CCC mv/c i ces collector-to-emitter leakage current CCC 1.0 20 35 200 CCC 130 CCC i ges gate-to-emitter forward leakage CCC CCC 100 na gate-to-emitter reverse leakage CCC CCC -100 g fe forward transconductance CCC 62 CCC s q g total gate charge CCC 38 CCC q gc gate-to-collector charge CCC 12 CCC t d(on) turn-on delay time CCC 15 CCC i c = 25a, v cc = 196v t r rise time CCC 21 CCC ns r g = 10 , l = 200h, l s = 150nh t d(off) turn-off delay time CCC 68 CCC t j = 25c t f fall time CCC 88 CCC t d(on) turn-on delay time CCC 15 CCC i c = 25a, v cc = 196v t r rise time CCC 23 CCC ns r g = 10 , l = 200h, l s = 150nh t d(off) turn-off delay time CCC 84 CCC t j = 150c t f fall time CCC 191 CCC t st shoot through blocking time 100 CCC CCC ns e pulse energy per pulse j human body model machine model c ies input capacitance CCC 1100 CCC c oes output capacitance CCC 57 CCC pf c res reverse transfer capacitance CCC 30 CCC l c internal collector inductance between lead, nh 6mm (0.25in.) l e internal emitter inductance from package v ce = v ge , i ce = 1.0ma 7.5 CCC CCC 4.5 CCC CCC nc CCC 1083 static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 25a, t j = 150c v ge = 15v, i ce = 40a v ge = 15v, i ce = 120a v ge = 15v, i ce = 25a CCC v ce = 25v, i ce = 25a v ce = 200v, i c = 25a, v ge = 15v v cc = 240v, r g = 5.1 , t j = 25c l = 220nh, c= 0.40f, v ge = 15v v cc = 240v, r g = 5.1 , t j = 100c CCC 854 CCC v cc = 240v, v ge = 15v, r g = 5.1 l = 220nh, c= 0.40f, v ge = 15v v ce = 360v, v ge = 0v v ce = 360v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v a v ce = 360v, v ge = 0v, t j = 125c ? = 1.0mhz and center of die contact conditions v ge = 0v, i ce = 250a reference to 25c, i ce = 1ma v ge = 15v, i ce = 70a v ge = 15v, i ce = 15a v ge = 15v, i ce = 30a esd class 1c (per jedec standard jesd22-a114) class b (per eia/jedec standard eia/jesd22-a115) v ce = 30v v ge = 0v downloaded from: http:///
www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 024681 01 2 v ge (v) 0 50 100 150 200 i c e ( a ) t j = 25c t j = 150c 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 v c e ( v ) t j = 25c t j = 150c i c = 25a 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v downloaded from: http:///
4 www.irf.com fig 7. maximum collector current vs. case temperature fig 10. typical e pulse vs. collector-to-supply voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area fig 8. typical repetitive peak current vs. case temperature 160 170 180 190 200 210 220 230 i c , peak collector current (a) 500 600 700 800 900 1000 1100 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 20 40 60 80 100 120 140 160 t j , temperature (oc) 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 0 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 35 i c ( a ) 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 100 120 140 160 180 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 2s duty cycle <= 0.05 half sine wave 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse 1msec 190 200 210 220 230 240 250 260 270 v cc, collector-to-supply voltage (v) 700 800 900 1000 1100 1200 1300 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c downloaded from: http:///
www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 1 02 03 04 05 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 240v v ces = 150v v ces = 60v i c = 25a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.38124 0.0003660.56023 0.001917 1.19321 0.091553 1.46677 2.1537 0 50 100 150 200 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc downloaded from: http:///
6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st downloaded from: http:///
www.irf.com 7 to-220ab full-pak package outline dimensions are shown in milimeters (inches) to-220ab full-pak package is not recommended for surface mount application.
to-220 full-pak part marking information logo in the assembly line "k" as s emb le d on ww 24, 2001 example: lot code 3432 this is an irfi840g with assembly part number irf i840g international rectif ier 124k note: "p" in as sembly line pos ition i ndi cates "l ead- f r ee" line k week 24 year 1 = 2001 dat e code lot code assembly 34 32 data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 101 n. sepulveda blvd, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2011 downloaded from: http:///
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