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www.irf.com 1 10/02/09 IRG7I319Upbf descriptionthis igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak currentcapability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package pd -96273 e c g n-channel gc e gate collector emitter v ce min 330 v v ce(on) typ. @ i c = 30a 1.42 v i rp max @ t c = 25c 170 a t j max 150 c key parameters absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v i c @ t c = 100c continuous collector, v ge @ 15v a i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range c soldering temperature for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case CCC 3.6 r cs case-to-sink, flat, g reased surface 0.50 c/w r ja junction-to-ambient, typical socket mount 65 wt weight 2.0 g 300 -40 to + 150 3414 0.27 max. 15 170 30 30 downloaded from: http:/// 2 www.irf.com half sine wave with duty cycle <= 0.05, ton=2sec. r is measured at t j of approximately 90c. pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 330 CCC CCC v ? v ces / ? t j breakdown voltage temp. coefficient CCC 0.38 CCC v/c CCC 1.20 1.45 CCC 1.34 CCC CCC 1.42 CCC 1.57 CCC v CCC 2.02 CCC 2.79 CCC 1.44 CCC v ge(th) gate threshold voltage 2.2 CCC 4.7 v ? v ge(th) / ? t j gate threshold voltage coefficient CCC -8.8 CCC mv/c i ces collector-to-emitter leakage current CCC 1.0 20 50 200 CCC 125 CCC i ges gate-to-emitter forward leakage CCC CCC 100 na gate-to-emitter reverse leakage CCC CCC -100 g fe forward transconductance CCC 55 CCC s q g total gate charge CCC 38 CCC q gc gate-to-collector charge CCC 12 CCC t d(on) turn-on delay time CCC 16 CCC i c = 25a, v cc = 196v t r rise time CCC 22 CCC ns r g = 10 ? , l = 200h, l s = 150nh t d(off) turn-off delay time CCC 81 CCC t j = 25c t f fall time CCC 105 CCC t d(on) turn-on delay time CCC 16 CCC i c = 25a, v cc = 196v t r rise time CCC 25 CCC ns r g = 10 ? , l = 200h, l s = 150nh t d(off) turn-off delay time CCC 95 CCC t j = 150c t f fall time CCC 203 CCC t st shoot through blocking time 100 CCC CCC ns e pulse energy per pulse j human body model machine model c ies input capacitance CCC 1085 CCC c oes output capacitance CCC 57 CCC pf c res reverse transfer capacitance CCC 31 CCC l c internal collector inductance between lead, nh 6mm (0.25in.) l e internal emitter inductance from package v ce = v ge , i ce = 1.3ma 7.5 CCC CCC 4.5 CCC CCC nc CCC 1083 static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 25a, t j = 150c v ge = 15v, i ce = 40a v ge = 15v, i ce = 120a v ge = 15v, i ce = 25a CCC v ce = 25v, i ce = 25a v ce = 200v, i c = 25a, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 25c l = 220nh, c= 0.40f, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 100c CCC 854 CCC v cc = 240v, v ge = 15v, r g = 5.1 ? l = 220nh, c= 0.40f, v ge = 15v v ce = 330v, v ge = 0v v ce = 330v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v a v ce = 330v, v ge = 0v, t j = 125c ? = 1.0mhz and center of die contact conditions v ge = 0v, i ce = 250a reference to 25c, i ce = 1ma v ge = 15v, i ce = 70a v ge = 15v, i ce = 15a v ge = 15v, i ce = 30a esd class 1c (per jedec standard jesd22-a114) class b (per eia/jedec standard eia/jesd22-a115) v ce = 30v v ge = 0v downloaded from: http:/// www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 024681 01 2 v ge (v) 0 50 100 150 200 i c e ( a ) t j = 25c t j = 150c 4 8 12 16 20 v ge (v) 0 2 4 6 8 10 v c e ( v ) t j = 25c t j = 150c i c = 25a 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v downloaded from: http:/// 4 www.irf.com fig 7. maximum collector current vs. case temperature fig 10. typical e pulse vs. collector-to-supply voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area fig 8. typical repetitive peak current vs. case temperature 160 170 180 190 200 210 220 230 i c , peak collector current (a) 500 600 700 800 900 1000 1100 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 20 40 60 80 100 120 140 160 t j , temperature (oc) 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 0 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 35 i c ( a ) 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 100 120 140 160 180 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 2s duty cycle <= 0.05 half sine wave 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse 1msec 190 200 210 220 230 240 250 260 270 v cc, collector-to-supply voltage (v) 700 800 900 1000 1100 1200 1300 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c downloaded from: http:/// www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 1 02 03 04 05 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 240v v ces = 150v v ces = 60v i c = 25a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.38124 0.0003660.56023 0.001917 1.19321 0.091553 1.46677 2.1537 0 50 100 150 200 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc downloaded from: http:/// 6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st downloaded from: http:/// www.irf.com 7 dimensions are shown in milimeters (inches) to-220ab full-pak package is not recommended for surface mount application. to-220 full-pak part marking information !"#$%&&"'()*)#$"+ !# $ #$,#-%!"& "%,./"" 0 data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2009 downloaded from: http:/// |
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