APTGLQ200H120G APTGLQ200H120G C rev 1 december, 2014 www.microsemi.com 1 C 6 g4 0/vbus e3 q3 g3 out2 vbus e1 q1 g1 e4 q4 out1 e2 q2 g2 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per igbt) symbol parameter max ratings unit v ces collector - emitter voltage 1200 v i c continuous collector current t c = 25c 350 a t c = 80c 200 i cm pulsed collector current t c = 25c 700 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 1000 w rbsoa reverse bias safe operating area t j = 125c 400a @ 1100v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? high speed trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - rbsoa and scsoa rated ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant full bridge high speed trench + field stop igbt4 power module v ces = 1200v i c = 200a @ tc = 80c downloaded from: http:///
APTGLQ200H120G APTGLQ200H120G C rev 1 december, 2014 www.microsemi.com 2 C 6 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 100 a v ce(sat) collector emitter saturation voltage v ge = 15v i c = 200a t j = 25c 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 7 ma 5.2 5.8 6.4 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 340 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 12.3 nf c oes output capacitance 0.7 c res reverse transfer capacitance 0.6 q g gate charge v ge = 15v ; v ce =960v i c =200a 900 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v ce = 600v i c = 200a r g = 2.5 30 ns t r rise time 57 t d(off) turn-off delay time 290 t f fall time 16 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v ce = 600v i c = 200a r g = 2.5 30 ns t r rise time 49 t d(off) turn-off delay time 366 t f fall time 48 e on turn-on switching energy v ge = 15v v ce = 600v i c = 200a r g = 2.5 t j = 150c 18 mj e off turn-off switching energy t j = 150c 11 mj i sc short circuit data v ge 15v ; v bus = 600v t p 10s ; t j = 150c 700 a r thjc junction to case thermal resistance 0.15 c/w diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm repetitive reverse voltage 1200 v i rm reverse leakage current v r =1200v 150 a i f dc forward current t c = 60c 200 a v f diode forward voltage i f = 200a v ge = 0v t j = 25c 1.9 2.2 v t j = 150c 1.85 t rr reverse recovery time i f = 200a v r = 600v di/dt = 4000a/s t j = 25c 155 ns t j = 150c 300 q rr reverse recovery charge t j = 25c 18.6 c t j = 150c 39 e r reverse recovery energy t j = 25c 8 mj t j = 150c 16 r thjc junction to case thermal resistance 0.25 c/w downloaded from: http:///
APTGLQ200H120G APTGLQ200H120G C rev 1 december, 2014 www.microsemi.com 3 C 6 thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m for teminals m5 2 3.5 wt package weight 300 g package outline (dimensions in mm) see application note apt0601 - mounting instructio ns for sp6 power modules on www.microsemi.com downloaded from: http:///
APTGLQ200H120G APTGLQ200H120G C rev 1 december, 2014 www.microsemi.com 4 C 6 typical performance curve output characteristics (v ge =15v) t j =25c t j =150c 0 50 100 150 200 250 300 350 400 0.5 1 1.5 2 2.5 3 3.5 4 v ce (v) i c (a) output characteristics v ge =9v v ge =13v v ge =15v v ge =20v 0 50 100 150 200 250 300 350 400 0123456 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 50 100 150 200 250 300 350 400 5 6 7 8 9 10 11 12 v ge (v) i c (a) energy losses vs collector current eon eoff 0 10 20 30 40 50 60 0 50 100 150 200 250 300 350 400 i c (a) e (mj) v ce = 600v v ge = 15v r g = 2.5 ? t j = 150c eon eoff 10 15 20 25 30 02 . 557 . 51 0 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 200a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 0 300 600 900 1200 v ce (v) i c (a) v ge =15v t j =150c r g =2.5 ? maximum effective transient thermal impedance, junction to case vs pul se duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGLQ200H120G APTGLQ200H120G C rev 1 december, 2014 www.microsemi.com 5 C 6 hard switching zcs zvs 0 40 80 120 160 200 0 50 100 150 200 250 300 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =2.5 ? t j =150c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode forward characteristic of diode t j =25c t j =150c 0 100 200 300 400 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) downloaded from: http:///
APTGLQ200H120G APTGLQ200H120G C rev 1 december, 2014 www.microsemi.com 6 C 6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with lif e- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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