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| 1 IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet pg-sot223 mosfet 800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years pioneeringsuperjunctiontechnologyinnovation. features ?best-in-classfomr ds(on) *e oss ;reducedq g ,c iss ,andc oss ?best-in-classdpakr ds(on) ?best-in-classv (gs)th of3vandsmallestv (gs)th variationof0.5v ?integratedzenerdiodeesdprotection ?fullyqualifiedacc.jedecforindustrialapplications ?fullyoptimizedportfolio benefits ?best-in-classperformance ?enablinghigherpowerdensitydesigns,bomsavingsandlower assemblycosts ?easytodriveandtoparallel ?betterproductionyieldbyreducingesdrelatedfailures ?lessproductionissuesandreducedfieldreturns ?easytoselectrightpartsforfinetuningofdesigns potentialapplications recommendedforhardandsoftswitchingflybacktopologiesforled lighting,lowpowerchargersandadapters,audio,auxpowerand industrialpower.alsosuitableforpfcstageinconsumerapplications andsolar. pleasenote: formosfetparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j=25c 800 v r ds(on),max 1.4 w q g,typ 10 nc i d 4 a e oss @ 500v 0.9 j v gs(th),typ 3 v esd class (hbm) 2 - type/orderingcode package marking relatedlinks IPN80R1K4P7 pg-sot223 80r1k4 see appendix a d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 3 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 4 2.7 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 8.9 a t c =25c avalanche energy, single pulse e as - - 8 mj i d =0.6a; v dd =50v avalanche energy, repetitive e ar - - 0.07 mj i d =0.6a; v dd =50v avalanche current, repetitive i ar - - 0.6 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0to400v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation p tot - - 7 w t c =25c operating and storage temperature t j , t stg -55 - 150 c - continuous diode forward current i s - - 1.4 a t c =25c diode pulse current 2) i s,pulse - - 8.9 a t c =25c reverse diode dv/dt 3) dv/dt - - 1 v/ns v ds =0to400v, i sd <=0.7a, t j =25c maximum diode commutation speed 3) di f /dt - - 50 a/ m s v ds =0to400v, i sd <=0.7a, t j =25c 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - solder point r thjs - - 18.7 c/w - thermal resistance, junction - ambient r thja - - 160 c/w device on pcb, minimal footprint thermal resistance, junction - ambient soldered on copper area r thja - - 75 c/w device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer 70 m m thickness) copper area for drain connection and cooling. pcb is vertical without air stream cooling. soldering temperature, wave- & reflow soldering allowed t sold - - 260 c reflow msl1 1) dpak equivalent. limited by t j max . maximum duty cycle d=0.5 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g ; t cond <2 m s d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 4 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 800 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.5 3 3.5 v v ds = v gs , i d =0.07ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =800v, v gs =0v, t j =25c v ds =800v, v gs =0v, t j =150c gate-source leakage curent incl. zener diode i gss - - 1 a v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.2 3.1 1.4 - w v gs =10v, i d =1.4a, t j =25c v gs =10v, i d =1.4a, t j =150c gate resistance r g - 1.5 - w f =250khz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 250 - pf v gs =0v, v ds =500v, f =250khz output capacitance c oss - 6.5 - pf v gs =0v, v ds =500v, f =250khz effective output capacitance, energy related 1) c o(er) - 8 - pf v gs =0v, v ds =0to500v effective output capacitance, time related 2) c o(tr) - 97 - pf i d =constant, v gs =0v, v ds =0to500v turn-on delay time t d(on) - 10 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w rise time t r - 8 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w turn-off delay time t d(off) - 40 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w fall time t f - 20 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 1 - nc v dd =640v, i d =1.4a, v gs =0to10v gate to drain charge q gd - 5 - nc v dd =640v, i d =1.4a, v gs =0to10v gate charge total q g - 10 - nc v dd =640v, i d =1.4a, v gs =0to10v gate plateau voltage v plateau - 4.5 - v v dd =640v, i d =1.4a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to500v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to500v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 5 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =1.4a, t f =25c reverse recovery time t rr - 800 - ns v r =400v, i f =0.7a,d i f /d t =50a/s reverse recovery charge q rr - 5 - c v r =400v, i f =0.7a,d i f /d t =50a/s peak reverse recovery current i rrm - 9 - a v r =400v, i f =0.7a,d i f /d t =50a/s d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 6 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 2 4 6 8 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 7 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 2 4 6 8 10 12 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 7 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 2 4 6 8 10 1.0 2.0 3.0 4.0 5.0 6.0 7.0 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 typ 98% r ds(on) =f( t j ); i d =1.4a; v gs =10v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 8 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 25 c 150 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 120 v 640 v v gs =f( q gate ); i d =1.4apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 e as =f( t j ); i d =0.6a; v dd =50v d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 9 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 700 750 800 850 900 950 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 -1 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 700 800 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 e oss = f (v ds ) d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 10 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 11 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet 6packageoutlines figure1outlinepg-sot223,dimensionsinmm-industrialgrade d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min ? 7.30 6.70 0.80 0.32 3.10 0.10 1.80 max 3.70 a2 1.70 0.75 1.10 3 1,50 12 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min ? 7.30 6.70 0.80 0.32 3.10 0.10 1.80 max 3.70 a2 1.70 0.75 1.10 3 1,50 13 800vcoolmosap7powertransistor IPN80R1K4P7 rev.2.1,2018-02-09 final data sheet revisionhistory IPN80R1K4P7 revision:2018-02-09,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2017-06-23 release of final version 2.1 2018-02-09 corrected front page text trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2018infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.5 revision 01 24-02-2016 issue date european projection 0 scale 5mm 0 2.5 document no. z8b00180553 millimeters 2.3 basic 4.6 basic e1 o n l ? e e1 e d b b2 c a1 a 6.30 3.30 6.70 1.52 2.95 0.24 0.60 - dim min ? 7.30 6.70 0.80 0.32 3.10 0.10 1.80 max 3.70 a2 1.70 0.75 1.10 3 1,50 |
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