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1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFH4257DPBF dual pqfn 5mm x 4mm tape and reel 4000 irfh4257dtrpbf q1 q2 v dss 25 25 v r ds(on) max (@v gs = 4.5v) 4.70 1.80 m ??? qg (typical) 9.7 23 nc i d (@t c = 25c) 25 ? 25 ? a features benefits control and synchronous mosfets in one package increased power density low charge control mosfet (9.7nc typical) lower switching losses low r dson synchronous mosfet (<1.8m ? ) results in lower conduction losses rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability intrinsic schottky diode with low forward voltage on q2 ? lower switching losses notes ? through ? are on page 12 absolute maximum ratings ?? parameter q1 max. q2 max. units v gs gate-to-source voltage 20 ? v i d @ t c = 25c continuous drain current, v gs @ 4.5v 68 ?? 111 ?? a ? i d @ t c = 70c continuous drain current, v gs @ 4.5v 54?? 88?? i d @ t c = 25c continuous drain current, v gs @ 4.5v (source bonding technology limited) 25? 25? i dm pulsed drain current 120 ? 375? p d @t c = 25c power dissipation 25 28 w ? p d @t c = 70c power dissipation 16 18 linear derating factor 0.20 0.22 w/c t j operating junction and -55 to + 150 t stg storage temperature range c ? applications ?? control and synchronous mosfets for synchronous buck converters ? ? thermal resistance ??? parameter q1 max. q2 max. units r ? jc (bottom) junction-to-case ? 5.0 4.5 r ? jc (top) junction-to-case ? 33 26 r ? ja junction-to-ambient ? 45 40 r ? ja (<10s) junction-to-ambient ? 30 27 c/w fast ir fet? IRFH4257DPBF dual pqfn 5x4 mm ?
2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF static @ t j = 25c (unless otherwise specified) ???? ? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage q1 25 ??? ??? v v gs = 0v, i d = 250a q2 25 ??? ??? v gs = 0v, i d = 1.0ma ? bv dss / ? t j breakdown voltage temp. coefficient q1 ??? 22 ??? mv/c reference to 25c, i d = 1.0ma q2 ??? 22 ??? reference to 25c, i d = 10ma q1 ??? 2.7 3.4 m ? ? v gs = 10v, i d = 25a ? r ds(on) static drain-to-source on-resistance q2 ??? 1.1 1.4 v gs = 10v, i d = 25a ? q1 ??? 3.7 4.7 v gs = 4.5v, i d = 25a ? q2 ??? 1.4 1.8 v gs = 4.5v, i d = 25a ? v gs(th) gate threshold voltage q1 1.1 1.6 2.1 v q1: v ds = v gs , i d = 35a q2 1.1 1.6 2.1 q2: v ds = v gs , i d = 100a ? v gs(th) / ? t j gate threshold voltage coefficient q1 ??? -5.4 ??? mv/c q1: v ds = v gs , i d = 35a q2 ??? -5.3 ??? q2: v ds = v gs , i d = 1ma i dss ? drain-to-source leakage current ? q1 ??? ??? 1.0 v ds = 20v, v gs = 0v q2 ??? ??? 250 v ds = 20v, v gs = 0v i gss gate-to-source forward leakage q1 ??? ??? 100 na v gs = 20v q2 ??? ??? 100 v gs = 20v gate-to-source reverse leakage q1 ??? ??? -100 v gs = -20v q2 ??? ??? -100 v gs = -20v gfs forward transconductance q1 100 ??? ??? s v ds = 10v, i d = 25a q2 138 ??? ??? v ds = 10v, i d = 25a q g total gate charge q1 ??? 9.7 15 nc q2 ??? 23 35 q gs1 pre-vth gate-to-source charge q1 ??? 2.4 ??? q1 q2 ??? 5.1 ??? v ds = 13v q gs2 post-vth gate-to-source charge q1 ??? 1.2 ??? v gs = 4.5v, i d = 25a q2 ??? 2.6 ??? q gd gate-to-drain charge q1 ??? 3.4 ??? q2 q2 ??? 7.6 ??? v ds = 13v q godr gate charge overdrive q1 ??? 2.7 ??? v gs = 4.5v, i d = 25a q2 ??? 7.7 ??? q sw switch charge (q gs2 + q gd ) q1 ??? 4.6 ??? q2 ??? 10.2 ??? q oss output charge q1 ??? 10 ??? nc v ds = 16v, v gs = 0v q2 ??? 25 ??? r g gate resistance q1 ??? 1.4 ??? ?? q2 ??? 0.7 ??? t d(on) turn-on delay time q1 ??? 8.2 ??? ns q1 q2 ??? 12 ??? v ds = 13v v gs = 4.5v t r rise time q1 ??? 47 ??? i d = 25a, rg = 1.8 ? q2 ??? 51 ??? t d(off) turn-off delay time q1 ??? 12 ??? q2 q2 ??? 20 ??? v ds = 13v v gs = 4.5v t f fall time q1 ??? 20 ??? i d = 25a, rg = 1.8 ? q2 ??? 25 ??? c iss input capacitance q1 ??? 1321 ??? pf q2 ??? 3161 ??? v gs = 0v c oss output capacitance q1 ??? 365 ??? v ds = 13v q2 ??? 965 ??? ? = 1.0mhz c rss reverse transfer capacitance q1 ??? 101 ??? q2 ??? 237 ??? a ?
3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF avalanche characteristics ??? parameter typ. q1 max. q2 max. units e as single pulse avalanche energy ? ??? 42 387 mj diode characteristics ????? ? parameter min. typ. max. units conditions i s continuous source current q1 ??? ??? 25 ? a mosfet symbol (body diode) q2 ??? ??? 25 ? showing the i sm pulsed source current q1 ??? ??? 120 ? a integral reverse (body diode) q2 ??? ??? 375 ? p-n junction diode. v sd diode forward voltage q1 ??? ??? 1.0 v t j = 25c, i s = 25a, v gs = 0v ? q2 ??? ??? 0.75 t j = 25c, i s = 25a, v gs = 0v ? t rr reverse recovery time q1 ??? 18 ??? ns q1 t j = 25c, i f = 25a q2 ??? 30 ??? v dd = 13v, di/dt = 200a/s ? q rr reverse recovery charge q1 ??? 16 ??? nc q2 t j = 25c, i f = 25a q2 ??? 37 ??? v dd = 13v, di/dt = 200a/s ?
4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF fig 1. typical output characteristics fig 5. typical transfer characteristics fig 3. typical output characteristics fig 2. typical output characteristics q1 - control fet q2 - synchronous fet fig 4. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 150c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v 1.0 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width fig 6. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 150c 2.5v vgs top 10v 5.0v 4.5v 3.5v 3.1v 2.9v 2.7v bottom 2.5v 1.0 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width
5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF q1 - control fet q2 - synchronous fet fig 9. typical gate charge vs . gate-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage fig 11. maximum safe operating area fig 12. maximum safe operating area 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package 0 5 10 15 20 25 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 25a fig 7. typical capacitance vs. drain-to-source voltage 0 102030405060 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds =20v v ds = 13v i d = 25a fig 8. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package
6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF fig 13. normalized on-resistance vs. temperature fig 17. typical on-resistance vs. gate voltage fig 15. typical source-drain diode forward voltage q1 - control fet q2 - synchronous fet fig 14. normalized on-resistance vs. temperature fig 18. typical on-resistance vs. gate voltage 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 16. typical source-drain diode forward voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 25a v gs = 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 25a v gs = 4.5v 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 25a t j = 25c t j = 125c 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 25a t j = 25c t j = 125c 0.3 0.5 0.7 0.9 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
7 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF fig 19. maximum drain current vs. case temperature fig 20. maximum drain current vs. case temperature fig 23. maximum avalanche energy vs. drain current fig 24. maximum avalanche energy vs. drain current q1 - control fet q2 - synchronous fet -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 35a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.1a 10a bottom 25a fig 21. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0ma 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.4a 7.0a bottom 25a fig 22. threshold voltage vs. temperature 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) limited by package 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package
8 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF fig 26. typical avalanche current vs. pulse width (q2) fig 27. maximum effective transient thermal impedance, junction-to-case (q1) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) fig 25. typical avalanche current vs. pulse width (q1)
9 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF fig 28. maximum effective transient thermal impedance, junction-to-case (q2) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
10 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF fig 29. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 32a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 32b. gate charge waveform fig 30a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 30b. unclamped inductive waveforms fig 31a. switching time test circuit fig 31b. switching time waveforms vdd ?
11 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF note: for the most current drawing please refer to ir website at http://www.irf.com/package/ dual pqfn 5x4 package details for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf dual pqfn 5x4 part marking
12 www.irf.com ? 2014 international rectifier submit datasheet feedback september 15, 2014 ? IRFH4257DPBF ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ notes: ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, q1: l = 0.13mh, r g = 50 ? , i as = 25a; q2: l = 1.24mh, r g = 50 ? , i as = 25a. ? pulse width 400s; duty cycle 2%. ? r ? is measured at t j approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on ma ximum allowable junction temperature. ? current is limited to q1 = 25a & q2 = 25a by source bonding technology. ? pulsed drain current is limited to 100a by source bonding technology. qualification information ? ? qualification level industrial (per jedec jesd47f ?? guidelines ) moisture sensitivity level dual pqfn 5mm x 4mm msl1 (per jedec j-std-020d ??) rohs compliant yes ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? applicable version of jedec standar d at the time of product release. dual pqfn 5x4 outline tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ? bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape description typ e package 5 x 4 pqfn note: all dimension are nominal diameter reel qty wid th reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadrant pin 1 (inch) w1 (mm) 13 4000 12.4 5.300 4.300 1.20 8.00 12 q1

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