S1JF - s1mf creat by art - glass passivated chip junction - ideal for automated placement - low forward voltage drop - low leakage current - halogen-free according to iec 61249-2-21 molding compound: ul flammability classification rating 94v-0 packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test symbol unit v rrm v v rms v v dc v i f(av) a t rr s c j pf t j c t stg c note 2: test conditions: i f =0.5a, i r =1.0a, i rr =0.25a note 3: measured at 1 mhz and applied reverse voltage of 4.0v dc. document number: ds_d1511004 version: a15 maximum rms voltage 560 700 600 800 1000 800 420 taiwan semiconductor 1a, 600v - 1000v surface mount rectifiers features msl1: per j-std-020 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec polarity: indicated by cathode band mechanical data case: smaf smaf weight: 35mg (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) s1kf s1mf 1000 maximum repetitive peak reverse voltage parameter S1JF 600 maximum dc blocking voltage maximum average forward rectified current 1 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm maximum reverse current @ rated v r t j =25c t j =125c a maximum instantaneous forward voltage (note 1) @ 1 a v f 1.1 v i r 5 a 50 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle c/w 25 70 typical reverse recovery time (note 2) typical junction capacitance (note 3) 6 r jl r ja typical thermal resistance 1.8 30 operating junction temperature range - 55 to +150
note 2: whole series with green compound (t a =25c unless otherwise noted) document number: ds_d1511004 version: a15 S1JF - s1mf taiwan semiconductor ratings and characteristics curves ordering information part no. packing code packing code suffix package packing packing code suffix g smaf 3,000 / 7" plastic reel S1JF r3g S1JF r3 g green compound note 1: "x" defines voltage from 600v (S1JF) to 1000v (s1mf) example example p/n part no. packing code r2 smaf 10,000 / 13" paper reel s1xf (note 1, 2) r3 description 0 0.5 1 1.5 0 25 50 75 100 125 150 average forward current(a) lead temperature ( c) fig.1 forward current derating curve 0 10 20 30 40 50 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine wave 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics t j =25 c t j =125 c 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics pulse width=300 s 1% duty cycle t j =25 c t j =125 c
min max min max a 1.25 1.60 0.049 0.063 b 2.40 2.80 0.094 0.110 c 3.30 4.30 0.130 0.169 d 0.90 1.10 0.035 0.043 e 0.10 0.25 0.004 0.010 f 0.70 1.20 0.028 0.047 g 4.40 5.20 0.173 0.205 marking diagram p/n = specific device code g = green compound code yw = date code f = factory code document number: ds_d1511004 version: a15 S1JF - s1mf taiwan semiconductor package outline dimensions smaf dim. unit (mm) unit (inch)
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