50v-1000v 3.0a es3a thru es3m 1000 800 700 560 1000 800 m k j g d ba mako semiconductor 1 of 2 features mechanical d ata maximum ra tings and electrical characteristics lo w cost low leakage low forward voltage drop high current capability easily cleaned with alcohol,isopropanol and similar solvents the plastic material carries u/l recognition 94v-0 case:jedec do-214aa,molded plastic te rminals: s olderab l e per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.007 ounces,0.21 grams mounting position: any s u r f a ce m o unt r e c t i f i e r rati ng at 25 ambient temperature unless otherwise specified. single phase, half wave ,60hz, resistive or inductive load. for capacitive load, derate current by 20% characteristics symbol es3 es3 es3 es3 es3 unit maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 v maximum rm s voltage v rms 35 70 140 280 420 v maximum dc blocking voltage v dc 50 100 200 400 600 v maximum average forward rectified curren t @t a =55 peak forward surge current 8.3ms single half sine-wave super imposed on rate d load(jedec method) peak forward voltag e at 3.0a dc v f 1.25 1. 70 v maximum dc r everse current @t j=25 at rated dc blocking voltage @t j=100 maximum reverse recovery time(note 1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating temperature range t j storage temperature range t stg 0.95 45 70 100 a 125 i fsm a i (av) 3.0 2.measured at 1.0 mhz and applied reverse voltag e of 4.0v dc 3.thermal resistance junction t o ambient. notes: 1.measured with if =0.5a, i r =1a, i rr =0.25a -55 to +150 -55 to +150 a i r 5.0 20 35 es3 es3 mako semiconductor.,co.ltd
ra tings and characteristic curves es3a thru es3m mako semiconductor 2 of 2 percent of rated peak reverse voltage, (%) fig.4 - typical revers e characteristics ins tantaneous reverse current, (ua) 20 40 12 0 14 0 0 0.1 1.0 10 10 00 100 60 80 10 0 t j = 25 c t j = 125 c fig.1 - forward current derating curve average forward current amperes 20 60 80 100 12 0 0. 8 0 40 0. 4 14 0 single phase half wave 60hz re sistive or inductive load 1. 0 0. 6 0. 2 lead temperature , c 160 instantaneous f orward voltage, volts fig.3 - typical forward characteris tics instantaneous forward current, (a) 0.8 1. 0 1. 8 0. 6 0. 1 1. 0 10 1. 2 1.4 1. 6 .0 1 t j = 25 c pulsewidth:300us es3 ab-ES3Db es3gb es3jb 0 0.2 0.4 peak forward su rge current, amperes fig.2 - maximum non-repetitive su rge current number of cycles at 60hz 1 510 50 100 2 20 0 20 40 10 0 pulse width 8.3ms single half-sine-wave (jedec method) 60 80 50v-1000v 3.0a es3a thru es3m s u r f a ce m o unt r e c t i f i e r makosemiconductor.,co.ltd
|
