SBP5307D-O copyright@semiwell semiconductor co., ltd., all rights are reserved semiwell semiconductor absolute maximum ratings (t j = 25 unless otherwise specified) symbol parameter condition value units v ces collector-emitter voltage v be = 0 700 v v ceo collector-emitter voltage i b = 0 400 v v ebo emitter-base voltage i c = 0 9.0 v i c collector current 8.0 a i cp collector pulse current 16.0 a i b base current 4.0 a i bm base peak current t p = 5ms 8.0 a p c total dissipation at tc = 25 80 w t j operation junction temperature - 40 ~ 150 t stg storage temperture - 40 ~ 150 thermal characteristics symbol parameter ratings unit r jc thermal resistance junction to case 1.67 /w r ja thermal resistance junction to ambient 62.5 /w high voltage fast switching npn power transistor features very high switching speed minimum lot to lot h fe variation wide reverse bias soa general description this device is designed for high voltage, high speed switching characteristics required such as lighting system, switching mode power supply. oct 2008. rev. 0 1/4 symbol 1 2 3
SBP5307D-O electrical characteristics ( tc = 25 unless otherwise noted) symbol items conditions ratings unit min typ. max i cev colletor cut-off current ( v be = -1.5v ) v ce = 700v v ce = 700v tc = 100 1.0 5.0 ma v ceo(sus) collector-emitter sustaining voltage i b = 0, i c = 10ma 400 v v ce(sat) collector-emitter sa turation voltage i c = 2.0a, i b = 0.4a i c = 5.0a, i b = 1.0a i c = 8.0a, i b = 2.0a 0.6 1.5 3.0 ma v be(sat) base-emitter satu ration voltage i c = 2.0a, i b = 0.4a i c = 5.0a, i b = 1.0a 1.2 1.6 ma h fe dc current gain i c = 2.0a, v ce = 5v i c = 5.0a, v ce = 5v 10 10 40 30 v t s t f storage time fall time i c = 5.0a, v cc = 125v i b1 = 1.0a, i b2 = -1.0a t p = 25us 3.6 1.6 ? 2/4
SBP5307D-O fig. 1 dc current gain fig. 2 saturation voltage 0.1 1 1 0.01 0.1 1 10 v ce (sat) v be (sat) ic=3i b 0.1 1 1 1 10 100 v ce =5v fig. 3 power derating fig. 4 safe operation area 0 25 50 75 100 125 150 175 2 0 0 10 20 30 40 50 60 70 80 90 100 1 10 100 10 0 0.01 0.1 1 10 100 1 0 0us 1 m s icmax(dc) icmax(pulse) fig. 5 collect output capacitance 0.1 1 10 100 10 0 1 10 100 1000 3/4 v be(s), v ce(s) saturation voltage h fe , dc current gain i c [a], collector current i c [a], collector current p c [w], power dissipation t c [ ], case temperature i c [a], collector current v ce [v], collector emitter voltage c ob [pf], capacitance v cb [v], collector base voltage
SBP5307D-O to-220 package dimension 4/4
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