2008. 11. 3 1/5 semiconductor technical data KMB4D0N30SA n-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features h v dss =30v, i d =4a h drain-source on resistance r ds(on) =47m ? (max.) @ v gs =10v r ds(on) =65m ? (max.) @ v gs =4.5v h super high dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a bc d e 2.93 0.20 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q note > *surface mounted on 1 ? 1 fr4 board, t ? 5sec pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v drain current dc@t a =25 ? i d * 4.0 a dc@t a =70 ? 3.5 pulsed i dp * 20 drain-source-diode forward current i s 1.04 a drain power dissipation t a =25 ? p d * 1.25 w t a =70 ? 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient r thja * 100 ? /w 2 3 1 gs d 1 2 3 kna downloaded from: http:///
2008. 11. 3 2/5 KMB4D0N30SA revision no : 1 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =250 a, v gs =0v, 30 - - v drain cut-off current i dss v gs =0v, v ds =30v - - 0.5 a v gs =0v, v ds =30v, tj=55 ? - - 10 gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain-source on resistance r ds(on) * v gs =10v, i d =3.5a - 38 47 m ? v gs =4.5v, i d =2.8a - 52 65 on-state drain current i d(on) * v gs =5v, v ds =4.5v 6 - - a forward transconductance g fs * v ds =5v, i d =2.5a - 7 - s dynamic input capaclitance c iss v ds =15v, f=1mhz, v gs =0v - 305 - pf ouput capacitance c oss - 65 - reverse transfer capacitance c rss - 29 - total gate charge q g * v ds =15v, v gs =10v, i d =2.5a - 6 9 nc gate-source charge q gs * - 1.6 - gate-drain charge q gd * - 1.0 - turn-on delay time t d(on) * v dd =15v, v gs =10v i d =1a, r g =6 ? - 7 11 ns turn-on rise time t r * - 12 18 turn-off delay time t d(off) * - 14 25 turn-off fall time t f * - 6 10 source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i dr =1.25a - 0.8 1.2 v note 1> * : pulse test : pulse width <300 k , duty cycle < 2% downloaded from: http:///
2008. 11. 3 3/5 KMB4D0N30SA revision no : 1 downloaded from: http:///
2008. 11. 3 4/5 KMB4D0N30SA revision no : 1 downloaded from: http:///
2008. 11. 3 5/5 KMB4D0N30SA revision no : 1 downloaded from: http:///
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