powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 dual igbtmod? compact igbt series module 6 00 amperes/1200 volts mg600 q 2ys60a 1 7 /05 description: powerex dual igbtmod? compact igbt series modules are designed for use in switching applications. each module consists of two igbt transistors in a half- bridge con?guration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simpli?ed system assembly and thermal management. features: over-current and over-temperature protection low v ce(sat) isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete part number from the table below -i.e. MG600Q2YS60A is a 1200v (v ces ), 600 ampere dual igbtmod? compact igbt series module. type current rating v ces amperes volts (x 10) mg 600 120 outline drawing and circuit diagram dimensions inches millimeters a 4.920.04 125.01.0 b 3.780.04 96.01.0 c 0.840.04 21.31.0 d 4.490.03 113.00.8 e 3.300.03 84.00.8 f 0.860.04 22.01.0 g 1.460.04 37.01.0 h 0.750.04 19.01.0 j 0.710.04 18.01.0 k 0.730.04 18.61.0 l 0.590.04 15.01.0 m 3.660.03 93.00.8 dimensions inches millimeters n 0.070.04 1.81.0 p 1.240.04 31.51.0 q 0.400.03 10.20.8 r 0.340.03 8.70.8 s 4.920.04 125.01.0 t 1.24-0.01/+0.04 31.5+2.0/-0.8 u 1.810.04 46.01.0 v 0.220.04 5.61.0 w 0.630.03 16.00.8 x 0.21 dia. 5.5 dia. y m8 metric m8 th 1 th 2 f o 1 e1 g1 f o 2 e2 g2 c2e1 e2 c1 v v v l v v l g1 f o 1 th1 th2 e1 g2 f o 2 e2 e2 c1 e1/c2 a d h f f w e b g u g s q r p t j k m det ail "a" det ail "a" x (4 pla ces) y (3 pla ces) #110 t ab (8 pla ces) n c
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A dual igbtmod? compact igbt series module 6 0 0 amperes/1200 volts 2 7 /05 absolute maximum ratings, t j = 25c unless otherwise speci?ed characteristics symbol MG600Q2YS60A units collector-emitter voltage v ces 1200 volts gate-emitter voltage v ges 20 volts collector current (dc) i c 600 amperes forward current (dc) i f 600 amperes collector dissipation (t c = 25c) p c 4300 watts power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c mounting torque, m5 mounting screws 27 in-lb mounting torque, m8 main terminal screws 88 in-lb module weight (typical) 680 grams isolation voltage, ac 1 minute, 60hz sinusoidal v iso 2500 volts electrical and mechanical characteristics, t j = 25c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units gate leakage current i ges v ge = 20v, v ce = 0v 10 a collector cutoff current i ces v ce = 1200v, v ge = 0v 1.0 ma gate-emitter cutoff voltage v ge(off) i c = 600ma,v ce = 5v 6.0 6.7 8.0 volts collector-emitter saturation voltage v ce(sat) v ge = 15v, i c = 600a, t j = 25c 2.7 3.1 volts v ge = 15v, i c = 600a, t j = 125c 3.2 3.5 volts input capacitance c ies v ce = 10v, v ge = 0v, f = 1mhz 41000 pf gate-emitter voltage v ge 13.0 15.0 17.0 volts gate resistance r g 7.5 15.0 inductive load t d(on) 0.3 s switching t r 0.2 s times t on v cc = 600v, i c = 600a, 0.5 s t d(off) v ge = 15v, r g = 7.5 1.3 s t f 0.1 0.3 s t off 1.4 s forward voltage v f i f = 600a, v ge = 0v, t j = 25c 2.2 3.2 volts i f = 600a, v ge = 0v, t j = 125c 2.0 volts reverse recovery time t rr i f = 600a, v ge = -15v, di/dt = 2000a/s 0.3 0.5 s junction to case thermal resistance r th(j-c)q igbt (per 1/2 module) 0.029 c/watt r th(j-c)d fwdi (per 1/2 module) 0.056 c/watt rtc operating current i rtc t j = 25c 1200 amperes
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A dual igbtmod? compact igbt series module 6 0 0 amperes/1200 volts 3 7 /05 ga te-emitter volt ag e, v ge , (v ol ts) collect or-emitter sa tura tion volt age, v ce(sat) , (volts) 0 6 12 18 24 collector-emitter saturation voltage characteristics (typical) collector current, i c , (amperes) output characteristics (typical) 300 600 900 0 1200 300 600 900 0 1200 12 6 0 2 4 8 10 0 1 0 6 8 2 4 collector-emitter voltage, v ce(sat) , (volts) t j = 25c t j = 25 c forward current, i f , (amperes) free-wheel characteristics (typical) 0 5 2 3 4 1 forward voltage, v f , (volts) i c = 1200a i c = 600 a i c = 300a i c = 1200a i c = 600 a i c = 300a i c = 1200a i c = 600 a i c = 300a ga te-emitter volt age, v ge , (v ol ts) collect or-emitter sa tura tion volt age, v ce(sat) , (volts) 0 6 12 18 24 collector-emitter saturation voltage characteristics (typical) 12 6 0 2 4 8 10 t j = 125c ga te-emitter volt age, v ge , (v ol ts) collect or-emitter sa tura tion volt age, v ce(sat) , (volts) 0 6 12 18 24 collector-emitter saturation voltage characteristics (typical) 12 6 0 2 4 8 10 t j = -40c collector current, i c , (amperes) output characteristics (typical) 300 600 900 0 1200 0 1 0 6 8 2 4 collector-emitter voltage, v ce(sat) , (volts) t j = 125c v ge = 20 v 15v 12v 10v 9v 8v v ge = 20v 12v 15v 10v 9v 8v v ge = 0v t j = 25c t j = 125c tj = -40c 10 4 10 3 10 2 0 600 400 200 collector current, i c , (amperes) 10 5 0 2 0 15 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 300 600 900 1200 collector current, i c , (amperes) switching time, t off , ( s) turn-off time vs. collector current (typical) v cc = 600v v ge = 15v r g = 7.5 ? t j = 25c t j = 125c 10 4 10 3 10 2 0 600 400 200 collector current, i c , (amperes) switching time, t on , ( s) turn-on time vs. collector current (typical) v cc = 600v v ge = 15v r g = 7.5 ? t j = 25 c t j = 125 c v ce = 5v t j = 25c t j = 125c tj = -40c
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A dual igbtmod? compact igbt series module 6 0 0 amperes/1200 volts 4 7 /05 collector current, i c , (amperes) switching time, t f , ( s) fall time vs. collector current (typical) 10 3 10 2 10 1 0 600 400 200 collector current, i c , (amperes) switching time, t r , ( s) rise time vs. collector current (typical) v cc = 600v v ge = 15v r g = 7.5 ? t j = 25 c t j = 125 c 10 4 10 3 10 2 0 600 400 200 collector current, i c , (amperes) switching time, t d(off) , ( s) turn-off delay time vs. collector current (typical) v cc = 600v v ge = 15v r g = 7.5 ? t j = 25 c t j = 125 c 10 4 10 3 10 2 0 600 400 200 collector current, i c , (amperes) switching time, t d(on) , ( s) turn-on delay time vs. collector current (typical) v cc = 600v v ge = 15v r g = 7.5 ? t j = 25 c t j = 125 c 10 3 10 2 10 1 0 600 400 200 v cc = 600v v ge = 15v r g = 7.5 ? t j = 25 c t j = 125 c 10 4 10 3 10 2 5 2 0 10 15 5 2 0 10 15 gate resistance, r g , ( ? ) switching time, t of f , ( s) turn-off time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 600 a t j = 25 c t j = 125 c 10 4 10 3 10 2 gate resistance, r g , ( ? ) switching time, t on , ( s) turn-on time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 600 a t j = 25 c t j = 125 c 10 4 10 3 10 2 switching time, t d(off) , ( s) turn-off delay time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 600 a t j = 25 c t j = 125 c 10 4 10 3 10 2 switching time, t d(on) , ( s) turn-on delay time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 600 a t j = 25 c t j = 125 c 10 4 10 3 10 2 switching time, t f , ( s) fall time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 600 a t j = 25 c t j = 125 c 5 2 0 10 15 5 2 0 10 15 gate resistance, r g , ( ? ) gate resistance, r g , ( ? ) 5 2 0 10 15 gate resistance, r g , ( ? )
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A dual igbtmod? compact igbt series module 6 0 0 amperes/1200 volts 5 7 /05 10 3 10 2 10 1 0 600 400 200 collector current, i c , (amperes) switching loss, e off , (mj/pulse) switching loss (off) vs. collector current (typical) v cc = 600v v ge = 15v r g = 7.5 ? t j = 25c t j = 125c 10 1 10 3 10 2 switching loss, e of f , (mj/pulse) switching loss (off) vs. gate resistance (typical) gate resistance, r g , ( ? ) v cc = 600v v ge = 15v i c = 600a t j = 25c t j = 125c 10 3 10 2 10 1 0 600 400 200 collector current, i c , (amperes) switching loss, e on , (mj/pulse) switching loss (on) vs. collector current (typical) v cc = 600v v ge = 15v r g = 7.5 ? t j = 25c t j = 125c 10 1 10 3 10 2 switching loss, e on , (mj/pulse) switching loss (on) vs. gate resistance (typical) gate resistance, r g , ( ? ) v cc = 600v v ge = 15v i c = 600a t j = 25c t j = 125c 10 3 10 2 10 1 0 600 400 200 forward current, i f , (amperes) reverse recovery current, i rr , (amperes) reverse recovery current (typical) v cc = 600v v ge = -10v di/dt = 2000a/ s t j = 25 c t j = 125 c 10 4 10 3 10 2 switching time, t r , ( s) rise time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 600a t j = 25 c t j = 125 c 5 2 0 10 15 5 2 0 10 15 5 2 0 10 15 gate resistance, r g , ( ? ) 10 2 10 1 10 0 0 600 200 400 forward current, i f , (amperes) forward current, i f , (amperes) reverse recovery loss, e ds w , (mj/pulse) reverse recovery loss vs. forward current (typical ) 10 3 10 2 10 1 0 600 200 400 reverse recovery time, t rr , (ns) reverse recovery time (typical) collect or-emitter volt age, v ce , (v ol ts) cap ac it ance, c ies , c oes , c res , (pf) 10 -2 10 0 10 -1 10 1 10 2 capacitance vs. collector-emitter voltage (typical) 10 5 10 3 10 2 10 4 v cc = 600v v ge = -10v di/dt = 2000a/ s t j = 25 c t j = 125 c v cc = 600v v ge = -10v di/dt = 2000a/ s t j = 25 c t j = 125 c c ie s c oe s c res v ge = 0v f = 1mhz t j = 25 c
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A dual igbtmod? compact igbt series module 6 0 0 amperes/1200 volts 6 7 /05 0 collect or-emitter volt ag e, v ce , (v ol ts) collect or current , i ic , (amperes) 0 200 600 400 800 1000 1200 1400 reverse bias safe operation area (typical) 10 4 10 0 10 2 10 3 10 1 gate-emitter voltage, v ge , (volts) gate charge, q g , (nc) gate-emitter voltage vs. gate charge (typical) 600v 200v 400v v ce = 0v collector-emitter voltage, v ce , (volts) 0 gate charge, q g , (nc) collector-emitter voltage vs. gate charg e (typical) 0 200 400 600 800 2000 4000 3000 1000 i c = 400a r l = 1.0 ? t j = 25 c 0 0 4 8 12 16 2000 4000 3000 1000 i c = 400a r l = 1.0 ? t j = 25 c v ge = 15v r g = 7.5 ? t j 125c collect or-emitter volt ag e, v ce , (v ol ts) collect or current , i ic , (amperes) 0 400 800 1200 1600 short circuit safe operating area (typical) 5000 3000 1000 4000 2000 pulse width, t w , (s ) 0 gate resistance r g , ( ? ) short circuit pulse width vs. gate resistance (typical) 0 5 10 15 20 5 10 2 0 15 time, (s ) transient imped ance, rt h (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (igbt) 10 0 10 -2 10 -4 10 -3 10 -1 v cc = 600v v ge = 15v r g = 7.5 ? t j 12 5 c v cc = 950v v ge = 15v t j = 25 c single pulse standard value = r th(j-c ) d = 0.056 c/w t c = 25 c single pulse standard value = r th(j-c) q = 0.029 c/w t c = 25 c time, (s ) transient imped ance, rt h (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (fwdi ) 10 0 10 -2 10 -4 10 -3 10 -1
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