jiangsu changjiang electron ics technology co., lt d dfnwb3*2-8l-b plastic-encapsulate mosfets CJ5903DC dual p-channel mosfet dfnwb3*2- 8 l-b feature ? surface mount package ? trenchfet power mosfet application ? load swith,pa switch and batte ry switch for portable ? devices and game consoles marking maximum ratings (t a =25 unless otherwis e noted) parameter symbol v a lue unit drain-source voltag e v ds -20 v gate-source voltage v gs 10 v continuous dr ain c urrent i d -4.5 a pulsed drai n c urrent i dm * -18 a t hermal resist ance from jun c tion to ambie n t r ja 1 13.6 /w junction t e mperature t j 150 storage temperature t stg -55~+150 lead te mperature for sold ering purposes(1/8?? from case for 10 s) t l 260 * repetitive rating : pulse wi d th limited by junction temperature. v (br)dss r ds(on) max i d - 2 0 v 70 m @ - 4.5 v ? -4. 5 a ? 9 0 m @ - 2 .5v 120 m @ - 1 . 8 v equivalent circuit www.cj-elec.com 1 a - 2 , may,2015 d1 d2
parameter symbol tes t condition min typ max unit static pa r ameters drain-source br eakd own voltage v (br) dss v gs = 0v, i d =-250a -20 v zero gate voltage drai n current i dss v ds =-16v,v gs = 0v -1 a gate-body leakage current i gss v gs =10v, v ds = 0v 10 ua gate threshold voltage (note 1) v gs(th) v ds =v gs , i d =-250a -0.4 -1 v drain-source on -resista nce (note 1) r ds(on) v gs =-4.5v, i d =-4.3a 70 m ? v gs =-2.5v, i d =-3.6a 90 m ? v gs =-1.8v, i d =-1.5a 120 m ? forwa r d tranconductance (note 1) g fs v ds =-6v, i d =-4.6a 12 s diode forwar d voltag e (note 1) v sd i s =-4.5a, v gs = 0v -1.2 v dynamic p a rameters (note 2) input capacitance c iss v ds =-6v,v gs =0v,f =1mhz 1500 pf output capacitance c oss 260 pf reverse transfer capacitance c rss 250 pf total gate charge q g v ds =-6v,v gs =-4.5v,i d =-5.6a 16 nc gate-source charge q gs 2.3 nc gate-drain charge q gd 2.5 nc switching parameters ( note 2) turn-on delay ti me t d( on) v gs =-4.5v,v dd =-6v, r g =1 ? ,r l =1.3 ? ,id -4.5a 35 ns turn-on rise time t r 35 ns turn-off delay ti me t d( o f f ) 50 ns turn-off fall time t f 25 ns notes : 1. pulse test : pulse w idth 300s, duty cycle 0.5%. 2. guaranteed by design, not su bject to production testing. mosfet electrical characteristics t =25 unless otherwise specified a www.cj-elec.com 2 a-2 , may,2015
www.cj-elec.com 3 a-2,may,2015 dfnwb3x2-8l-b package outline dimensions dfnwb3x2-8l-b 1 1 1 1
dfnwb3x2-8l tape and reel www.cj-elec.com 4 a-2 , may,2015
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