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bsg0813ndi power block features ? dual asymmetric n-channel optimos?5 mosfet ? logic level (4.5v rated) ? optimized for high performance buck converters ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target applications ? halogen-free according to iec61249-2-21 ? monolithic integrated schottky like diode maximum ratings, at tj=25c, unless otherwise specified 2) parameter symbol conditions unit q1 q2 continuous drain current i d t c =70?c,? v gs =10 v 50 50 a t c =70?c,? v gs =4.5 v 50 50 t a =25?c,? v gs =4.5?v 3) 31 50 t a =25?c,? v gs =4.5?v 4) 19 33 pulsed drain current i d,pulse t c =70?c 160 160 avalanche energy, single pulse e as q1: i d =10?a, q2: i d =20?a, r gs =25? w 30 90 mj gate source voltage v gs t j =25?c v power dissipation p tot t a =25?c 3) 6.25 6.25 w t a =25 c 4) 2.5 2.5 operating and storage temperature t j , t stg c iec climatic category; din iec 68-1 value -55 ... 150 55/150/56 16 1) j-std20 and jesd22 type package marking bsg0813ndi pg -tison8-4 0813ndi d1 (vin) s1 (vphase) d1 (vin) g1 (ghs) s1/d2 (vphase) g2 (gls) s1/d2 (vphase) s1/d2 (vphase) s2 (gnd) q1 top view (1) (2) (3) (4) (5) (6) (7) (8) (10) (9) q2 q1 q2 v ds 25 25 v r ds(on),max v gs =10 v 3 1.2 m w v gs =4.5 v 4 1.7 i d 50 50 a product summary rev.2.1 page 1 2016-03-08
bsg0813ndi parameter symbol conditions unit min. typ. max. thermal characteristics q1 r thjc - - 4.3 k/w q2 - - 2.2 q1 r thja q2q1 q2 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage q1q2 q1 q2 gate threshold voltage q1q2 zero gate voltage drain current q1 i dss - - 1 a q2 - - 500 q1 - - 100 q2 - 1 - ma gate-source leakage current q1 i gss q2q1 r ds(on) - 3.2 4.0 m w q2 - 1.2 1.7 q1 - 2.4 3.0 q2 - 0.9 1.2 gate resistance q1 r g - 0.7 1.2 w q2 - 1 1.7 transconductance q1 g fs 46 93 - s q2 70 140 - breakdown voltage temperature coefficient d v (br)dss /d t j i d =10?ma, referenced to 25?c - 15 v gs(th) v v ds = v gs , i d =250?a 20 50 - - - - - mv/k 6 cm 2 cooling area 4) v (br)dss v gs =0?v, i d =1?ma v ds =25?v, v gs =0?v, t j =25?c values 2) only one of both transistors active drain-source on-state resistance thermal resistance, junction - ambient 2) application specific board 3) 100 - - 2 1.2 thermal resistance, junction - case 1.6 25 6) v v gs =4.5?v, i d =20?a v gs =10?v, i d =20?a | v ds |>2| i d | r ds(on)max , i d =20?a v ds =20?v, v gs =0?v, t j =125?c na - v gs =16?v, v ds =0?v - rev.2.1 page 2 2016-03-08
bsg0813ndi parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance q1 c iss - 780 1100 pf q2 - 2200 2900 output capacitance q1 c oss - 390 520 q2 - 1300 1700 reverse transfer capacitance q1 c rss - 38 - q2 - 71 - turn-on delay time q1 t d(on) - 4.3 - ns q2 - 3.6 - rise time q1 t r - 4.7 - q2 - 2.8 - turn-off delay time q1 t d(off) - 4.3 - q2 - 5.7 - fall time q1 t f - 1.4 - q2 - 1.7 - gate charge characteristics gate to source charge q1 q gs - 2.0 nc gate to drain charge q gd - 1.4 - gate charge total q g - 5.6 8.4 gate plateau voltage v plateau - 2.6 - v gate to source charge q2 q gs - 5.2 - nc gate to drain charge q gd - 3.1 - gate charge total q g - 15 22 gate plateau voltage v plateau - 2.3 - v output charge q1 q oss - 8 - nc q2 - 27 - 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 3) 8 layers copper 70m thickness. pcb in still air values v gs =0?v, v ds = 12?v, f =1?mhz v in =12?v, v drv =5?v, f sw =500?khz, i out =20?a 5) v dd =12?v, i d =20?a, v gs =0?to 4.5?v v dd =12?v, v gs =0?v rev.2.1 page 3 2016-03-08
bsg0813ndi parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current q1 i s - - 29 a q2 - - 50 diode pulse current q1 i s,pulse - - 160 q2 - - 160 diode forward voltage q1 v sd v gs =0?v, i f =20?a, t j =25?c - 0.82 1 v q2 v gs =0?v, i f =11?a, t j =25?c - 0.52 0.7 reverse recovery charge q1 q rr nc q2 5) for more information see application note n tbd 6) the device can withstand a pulse of not more than 30 v for a duration of u p to 2 ns at a frequency of 600 khz with maximum buck converter input voltage v in =16 v values t c =25?c v r =12 v, i f = i s , d i f /d t =100 a/s 10 - - rev.2.1 page 4 2016-03-08
bsg0813ndi 1 power dissipation (q1) 2 power dissipation (q2) p tot =f( t a ) 4) p tot =f( t a ) 4) 3 drain current (q1) 4 drain current (q2) i d =f( t c ) i d =f( t c ) parameter: v gs 10 v parameter: v gs 10 v 0 0.5 1 1.5 2 2.5 3 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 60 0 40 80 120 160 i d [a] t c [ c] 0 0.5 1 1.5 2 2.5 3 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 60 0 40 80 120 160 i d [a] t c [ c] rev.2.1 page 5 2016-03-08
bsg0813ndi 5 safe operating area (q1) 6 safe operating area (q2) i d =f( v ds ); t c =25 c; d =0 i d =f( v ds ); t c =25 c; d =0 parameter: t p parameter: t p 7 max. transient thermal impedance (q1) 8 max. transient thermal impedance (q2) z thjc =f( t p ) z thjc =f( t p ) parameter: d = t p / t parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 i d [a] v ds [v] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -1 10 0 10 1 z thjc [k/w] t p [s] 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 i d [a] v ds [v] rev.2.1 page 6 2016-03-08
bsg0813ndi 9 typ. output characteristics (q1) 10 typ. output characteristics (q2) i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: v gs parameter: v gs 11 typ. drain-source on resistance (q1) 12 typ. drain-source on resistance (q2) r ds(on) =f( i d ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 100 200 300 400 0 1 2 3 i d [a] v ds [v] 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 40 80 120 160 0 1 2 3 i d [a] v ds [v] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 0.5 1 1.5 2 2.5 3 0 20 40 60 80 r ds(on) [m w ] i d [a] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 2 4 6 8 10 0 20 40 60 80 r ds(on) [m w ] i d [a] rev.2.1 page 7 2016-03-08
bsg0813ndi 13 typ. transfer characteristics (q1) 14 typ. transfer characteristics (q2) i d =f( v gs ); | v ds |>2 | i d | r ds(on)max i d =f( v gs ); |v ds |>2 | i d | r ds(on)max parameter: t j parameter: t j 15 drain-source on-state resistance (q1) 16 drain-source on-state resistance (q2) r ds(on) =f( t j ); i d =20 a; v gs =10 v r ds(on) =f( t j ); i d =20 a; v gs =10 v 25 c 150 c 0 100 200 300 400 0 1 2 3 4 i d [a] v gs [v] 25 c 150 c 0 40 80 120 160 0 1 2 3 4 i d [a] v gs [v] typ 0 1 2 3 4 5 6 7 -60 -20 20 60 100 140 180 r ds(on) [m w ] t j [ c] typ 0 0.5 1 1.5 2 -60 -20 20 60 100 140 180 r ds(on) [m w ] t j [ c] rev.2.1 page 8 2016-03-08
bsg0813ndi 17 typ. gate threshold voltage (q1) 18 typ. gate threshold voltage (q2) v gs(th) =f( t j ); v gs = v ds ; i d =250 a v gs(th) =f( t j ); v gs = v ds ; i d =10 ma 19 typ. capacitances (q1) 20 typ. capacitances (q2) c =f( v ds ); v gs =0 v; f =1 mhz c =f( v ds ); v gs =0 v; f =1 mhz ciss coss crss 10 0 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] ciss coss crss 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] rev.2.1 page 9 2016-03-08
bsg0813ndi 21 forward characteristics of reverse diode (q1) 22 forward characteristics of reverse diode (q2) i f =f( v sd ) i f =f( v sd ) parameter: t j parameter: t j 23 avalanche characteristics (q1) 24 avalanche characteristics (q2) i as =f( t av ); r gs =25 w i as =f( t av ); r gs =25 w parameter: t j(start) parameter: t j(start) 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 150 c 10 -2 10 -1 10 0 10 1 10 2 10 3 0 0.4 0.8 1.2 i f [a] v sd [v] - 55 c 25 c 150 c 100 c 10 -2 10 -1 10 0 10 1 10 2 10 3 0 0.4 0.8 1.2 i f [a] v sd [v] rev.2.1 page 10 2016-03-08
bsg0813ndi 25 typ. gate charge (q1) 26 typ. gate charge (q2) v gs =f( q gate ); i d =20 a pulsed v gs =f( q gate ); i d =20 a pulsed parameter: v dd parameter: v dd 27 drain-source breakdown voltage (q1) 28 typ. drain-source leakage current (q2) v br(dss) =f( t j ); i d =1 ma i dss =f( v ds ); v gs =0 v parameter: t j 20 21 22 23 24 25 26 27 28 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 5 v 12 v 20 v 0 2 4 6 8 10 0 2 4 6 8 10 12 14 v gs [v] q gate [nc] 5 v 12 v 20 v 0 2 4 6 8 10 0 10 20 30 v gs [v] q gate [nc] 25 c 75 c 100 c 125 c 10 -6 10 -5 10 -4 10 -3 10 -2 0 5 10 15 20 i dss [a] v ds [v] rev.2.1 page 11 2016-03-08
bsg0813ndi package outline pg-tison8-4 rev.2.1 page 12 2016-03-08
bsg0813ndi boardpads & apertures pg-tison8-4 all the dimensions in mm rev.2.1 page 13 2016-03-08
15 25voptimosa5powermosfet bsg0813ndi rev.2.1,2016-03-24 revisionhistory bsg0813ndi revision:2016-03-24,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2015-03-17 release of final version 2.1 2016-03-24 update package drawing trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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