? semiconductor components industries, llc, 2013 september, 2013 ? rev. 1 1 publication order number: njw21193/d NJW21193G (pnp) njw21194g (npn) silicon power transistors the NJW21193G and njw21194g utilize perforated emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. features ? total harmonic distortion characterized ? high dc current gain ? excellent gain linearity ? high soa ? these devices are pb ? free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 250 vdc collector ? base voltage v cbo 400 vdc emitter ? base voltage v ebo 5.0 vdc collector ? emitter voltage ? 1.5 v v cex 400 vdc collector current ? continuous i c 16 adc collector current ? peak (note 1) i cm 30 adc base current ? continuous i b 5.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.6 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 s, duty cycle 10%. thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.625 c/w thermal resistance, junction ? to ? ambient r ja 40 c/w 16 amperes complementary silicon power transistors 250 volts, 200 watts http://onsemi.com device package shipping ordering information to ? 3p case 340ab styles 1,2,3 marking diagram njw21194g to ? 3p (pb ? free) 30 units/rail NJW21193G to ? 3p (pb ? free) 30 units/rail njw2119xg ayww x = 3 or 4 g = pb ? free package a = assembly location y = year ww = work week 1 2 3 4 123 1 base emitter 3 collector 2, 4 1 base emitter 3 collector 2, 4 pnp npn
NJW21193G (pnp) njw21194g (npn) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 250 ? ? vdc collector cutoff current (v ce = 200 vdc, i b = 0) i ceo ? ? 100 adc emitter cutoff current (v ce = 5 vdc, i c = 0) i ebo ? ? 100 adc collector cutoff current (v ce = 250 vdc, v be(off) = 1.5 vdc) i cex ? ? 100 adc second breakdown second breakdown collector current with base forward biased (v ce = 50 vdc, t = 1 s (non ? repetitive) (v ce = 80 vdc, t = 1 s (non ? repetitive) i s/b 4.0 2.25 ? ? ? ? adc on characteristics dc current gain (i c = 8 adc, v ce = 5 vdc) (i c = 16 adc, i b = 5 adc) h fe 20 8 ? ? 80 ? base ? emitter on voltage (i c = 8 adc, v ce = 5 vdc) v be(on) ? ? 2.2 vdc collector ? emitter saturation voltage (i c = 8 adc, i b = 0.8 adc) (i c = 16 adc, i b = 3.2 adc) v ce(sat) ? ? ? ? 1.4 4 vdc dynamic characteristics total harmonic distortion at the output v rms = 28.3 v, f = 1 khz, p load = 100 w rms h fe unmatched (matched pair h fe = 50 @ 5 a/5 v) h fe matched t hd ? ? 0.8 0.08 ? ? % current gain bandwidth product (i c = 1 adc, v ce = 10 vdc, f test = 1 mhz) f t 4 ? ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? ? 500 pf i c collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current gain bandwidth product (mhz) t pnp NJW21193G f, current gain bandwidth product (mhz) t npn njw21194g i c collector current (amps) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 1.0 10 0.1 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0 1.0 10 0.1 1.0 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 10 v v ce = 5 v t j = 25 c f test = 1 mhz
NJW21193G (pnp) njw21194g (npn) http://onsemi.com 3 figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c collector current (amps) i c collector current (amps) h fe , dc current gain h fe , dc current gain i c collector current (amps) i c collector current (amps) v ce , collector-emitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collector-emitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) pnp NJW21193G npn njw21194g h fe , dc current gain typical characteristics pnp NJW21193G pnp NJW21193G npn njw21194g npn njw21194g 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 1000 100 10 100 10 1.0 0.1 30 0 25 20 15 10 5.0 0 5.0 10 15 20 25 35 0 30 25 20 15 5.0 0 5.0 10 15 20 25 10 v ce = 20 v t j = 100 c 25 c -25 c v ce = 20 v t j = 100 c 25 c -25 c t j = 100 c 25 c -25 c v ce = 5 v t j = 100 c 25 c -25 c v ce = 20 v t j = 25 c t j = 25 c 1.5 a i b = 2 a 1 a 0.5 a i b = 2 a 1.5 a 1 a 0.5 a
NJW21193G (pnp) njw21194g (npn) http://onsemi.com 4 v be(on) , base-emitter voltage (volts) figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical base ? emitter voltage i c , collector current (amps) figure 12. typical base ? emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) pnp NJW21193G npn njw21194g typical characteristics pnp NJW21193G npn njw21194g 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 1.4 100 10 1.0 0.1 1.2 1.0 0.8 0.6 0.4 0.2 0 10 100 10 1.0 0.1 1.0 0.1 10 100 10 1.0 0.1 1.0 0.1 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) figure 13. active region safe operating area v ce , collector emitter (volts) figure 14. active region safe operating area pnp NJW21193G npn njw21194g 100 1000 10 1.0 1.0 0.1 100 10 i c , collector current (amps) 100 msec 10 msec 1 sec v ce , collector emitter (volts) 100 1000 10 1.0 1.0 0.1 100 10 i c , collector current (amps) 100 msec 10 msec 1 sec
NJW21193G (pnp) njw21194g (npn) http://onsemi.com 5 there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t j(pk) = 150 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. figure 15. NJW21193G typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 16. njw21194g typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 17. typical total harmonic distortion frequency (hz) t hd , total harmonic distortion (%) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100000 10000 1000 100 10 t c = 25 c c ob c ib t c = 25 c c ib c ob f (test) = 1 mhz) f (test) = 1 mhz)
NJW21193G (pnp) njw21194g (npn) http://onsemi.com 6 audio precision model one plus total harmonic distortion analyzer source amplifier 50 0.5 0.5 8.0 -50 v dut dut +50 v figure 18. total harmonic distortion test circuit
NJW21193G (pnp) njw21194g (npn) http://onsemi.com 7 package dimensions to ? 3p ? 3ld case 340ab ? 01 issue a g k l c e j h 123 4 d 3x s b m 0.25 a a p dim a min nom max millimeters 19.70 19.90 20.10 b 15.40 15.60 15.80 c 4.60 4.80 5.00 d 0.80 1.00 1.20 e 1.45 1.50 1.65 g 5.45 bsc h 1.20 1.40 1.60 j 0.55 0.60 0.75 k 19.80 20.00 20.20 l 18.50 18.70 18.90 u 5.00 ref p 3.30 3.50 3.70 q 3.10 3.20 3.50 w 2.80 3.00 3.20 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30mm from the terminal tip. 4. dimension a and b do not include mold flash, protrusions, or gate burrs. f 1.80 2.00 2.20 b g b q a (3 ) seating plane f u w style 1: pin 1. base 2. collector 3. emitter 4. collector style 2: pin 1. anode 2. cathode 3. anode 4. cathode style 3: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 njw21193/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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