features low cost diffused junction low leakage low forward voltage drop high current capability and s im ilar s olvents mechanical data terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode w e i g h t : 0.024ounces,0.68 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. byw 34 byw 35 byw 36 units maximum recurrent peak reverse voltage v rrm 400 500 600 v max imum rms v olta ge v rms 280 350 420 v maximum dc blocking voltage v dc 400 500 600 v maximum average f orw ard rectif ied current 9.5mm lead length, @t a =75 peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous f orw ard voltage @ 2.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =150 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 5.0 BYW32 (z) - - - byw36 (z) 200 22 voltage range: 200---600 v current: 2.0 a 300 byw 33 2.0 a f a st r e c ove r y r ec t i f i er s 1.2 ca s e : j e d e c d o - 1 5 b , m old e d pla s t i c maximum ratings and electrical characteristics 4 0 . 0 i f(av) a i fsm 3. thermal resistance f rom junction to ambient. a 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- +150 - 55---- +150 35 i r 5 0 . 0 d o - 1 5 b 200 140 200 byw 32 easily cleaned with freon,alcohol,isopropanol 300 210 the plastic material carries u/l recognition 94v-0 dimensions in millimeters www.diode.kr diode semiconductor korea
10 1 1 1 0 0 4 t j =25 f=1.0mhz 20 40 0.01 0 t j =75 0.1 1 10 20 40 60 80 100 20 t j =25 t j =125 0 . 6 t j =25 pulse width=300 ?? 8.3ms single half sine-wave 100 1 10 20 30 40 50 average forward rectified current, amperes peak forward surge curren t amperes amperes amperes junction capacitance, pf rectification efficiency fig.5-- typical junction capacitance fig.6-- typical rectification efficiency n u m b e r o f c y c l e s a t 6 0 h z fi g. 4--typi cal reverse characteri sti cs i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s p e r c e n t o f r a t ed p e ak r e v e r s e v o l t a g e , % reverse voltage,volts freouency, khz ambient temperature, fig.3 --typical forward characteristics instantaneous reverse current, fig.1 --forward derating curve BYW32 (z) - - - byw36 (z) instantaneous forward current f i g . 2 -- p e ak f o r w a r d s u r g e c u r r e n t 0 1 0.2 10 100 1000 0.4 0.8 1.2 0.6 1.0 BYW32 thru byw36 series fast recovery standard recovery www.diode.kr diode semiconductor korea
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