052-6208 rev e 12-2005 apt12gt60br(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 0.5ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 10a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 10a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt12gt60br(g) 600 30 2512 30 30a @ 600v 108 -55 to 150 300 unit volts amps watts c parametercollector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.advancedpower.com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 600 3 4 5 1.6 2.0 2.5 2.8 25 1000 100 600v apt12gt60br APT12GT60BRG* *g denotes rohs compliant, pb free terminal finish. ? the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ? low forward voltage drop ? high freq. switching to 150khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated thunderbolt igbt ? t o - 2 4 7 g c e g c e downloaded from: http:///
052-6208 rev e 12-2005 apt12gt60br(g) thermal and mechanical characteristics unit c/w gm min typ max 1.16 n/a 5.9 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 10a t j = 150c, r g = 10 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 10a r g = 10 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 10a r g = 10 ? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 610 75 50 7.5 65 5 30 30 6 6 95 34 90 140 120 6 6 115 50 95 220 185 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode.5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the speci?cations and information contained herein . downloaded from: http:///
052-6208 rev e 12-2005 apt12gt60br(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 3025 20 15 10 50 3025 20 15 10 50 4.03.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.151.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 1 2 3 4 5 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 80 6 8 10 12 14 16 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 5045 40 35 30 25 20 15 10 50 1614 12 10 86 4 2 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 3530 25 20 15 10 50 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction tem perature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temper ature 15v 9v 8v 7v 10v t j = 125c t j = 25c t j = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 20a i c = 10a i c = 5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 20a i c = 10a i c = 5a t j = 125c t j = 25c t j = -55c 13v 11v v ce = 480v v ce = 300v v ce = 120v i c = 10a t j = 25c v ge = 15v downloaded from: http:///
052-6208 rev e 12-2005 apt12gt60br(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 10 ? l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junc tion temperature r g = 10 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , or 125c r g = 10 ? l = 100h 86 4 2 0 1210 86 4 2 0 600500 400 300 200 100 0 1000 800600 400 200 0 140120 100 8060 40 20 0 6050 40 30 20 10 0 400300 200 100 0 600500 400 300 200 100 0 v ge = 15v t j = 125c, v ge = 15v t j = 25 or 125c,v ge = 15v t j = 25c, v ge = 15v v ce = 400v v ge = +15v r g = 10 ? 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 0 10 20 30 40 50 0 25 50 75 100 125 r g = 10 ? , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 10 ? t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 10 ? t j = 125c t j = 25c e on2, 20a e off, 20a v ce = 400v v ge = +15v t j = 125c e on2, 10a e off, 10a e on2, 5a e off, 5a e on2, 20a e off, 20a e on2, 10a e off, 10a e on2, 5a e off, 5a downloaded from: http:///
052-6208 rev e 12-2005 apt12gt60br(g) typical performance curves 1.201.00 0.80 0.60 0.40 0.20 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 1,000 500100 5010 3530 25 20 15 10 50 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operatin g area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 0 5 10 15 20 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 10 ? 280100 5010 c res 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: c oes c ies 0.4220.427 0.312 0.00040.0028 0.0451 power (watts) junction temp. ( c) rc model case temperature. ( c) downloaded from: http:///
052-6208 rev e 12-2005 apt12gt60br(g) apt15dq60 figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circui t v cc apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign p atents. us and foreign patents pending. all rights reserved. to - 247 package outlin e e1 sac: tin, silver, copper 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. downloaded from: http:///
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