MCH6937 no.8040-1/6 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8040 MCH6937 tr : pnp epitaxial planar silicon transistor fet : n-channel silicon mosfet power management switch applications features ? composite type with a pnp transistor and a n-ch mosfet contained in one package facilitating high-density mounting. ? ultrasmall package permitting applied sets to be small and slim. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [tr] collector-to-base voltage v cbo --30 v collector-to-emitter voltage v ceo --30 v emitter-to-base voltage v ebo -- 5 v collector current i c --300 ma collector current (pulse) i cp --600 ma collector dissipation p c mounted on a ceramic board (600mm 2 5 0.8mm) 0.5 w junction temperature tj 150 c [fet] drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current i d 150 ma drain current (pulse) i dp 600 ma allowable power dissipation p d mounted on a ceramic board (600mm 2 5 0.8mm) 0.5 w channel temperature tch 150 c [common rating] total dissipation p t mounted on a ceramic board (600mm 2 5 0.8mm) 0.55 w storage temperature tstg --55 to +150 c marking : ey any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 12805ea ts im tb-00001159
MCH6937 no.8040-2/6 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [tr] collector cutoff current i cbo v cb =--30v, i e =0 --100 na emitter cutoff current i ebo v eb =--4v, i c =0 --100 na dc current gain h fe v ce =--2v, i c =--10ma 200 500 gain-bandwidth product f t v ce =--10v, i c =--50ma 520 mhz output capacitance cob v cb =--10v, f=1mhz 3 pf collector-to-emitter saturation voltage v ce (sat) i c =--100ma, i b =--5ma --110 --220 mv base-to-emitter saturation voltage v be (sat) i c =--100ma, i b =--5ma --0.9 --1.2 v collector-to-base breakdown voltage v (br)cbo i c =--10 m a, i e =0 --30 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --30 v emitter-to-base breakdown voltage v (br)ebo i e =--10 m a, i c =0 --5 v turn-on time t on see specified test circuit. 39 ns storage time t stg see specified test circuit. 200 ns fall time t f see specified test circuit. 48 ns [fet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 10 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =100 m a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =80ma 0.15 0.22 s r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 w static drain-to-source on-state resistance r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 w r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 w input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss v ds =10v, f=1mhz 5.9 pf reverse transfer capacitance crss v ds =10v, f=1mhz 2.3 pf turn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 65 ns turn-off delay time t d (off) see specified test circuit. 155 ns fall time t f see specified test circuit. 120 ns total gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =150ma 0.26 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =150ma 0.31 nc diode forward voltage v sd i s =150ma, v gs =0 0.87 1.2 v package dimensions electrical connection unit : mm 2236 5 6 1 4 23 1 : source 2 : gate 3 : collector 4 : emitter 5 : base 6 : drain top view 1 : source 2 : gate 3 : collector 4 : emitter 5 : base 6 : drain sanyo : mcph6 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 123 654 32 5 46 (bottom view) (top view)
MCH6937 no.8040-3/6 0 0 --20 --40 --60 --80 --100 --120 --140 --160 --180 --200 i c -- v ce it04096 it04098 it04097 it04099 --0.2 --0.4 --1.0 --1.2 --0.6 --0.8 --1.4 --1.6 --1.8 --2.0 i c -- v be h fe -- i c 23 57 --1.0 --10 23 57 --100 23 5 100 2 3 5 1000 7 5 7 --10 --1.0 --10 23 57 23 57 --100 23 5 --100 2 3 5 7 2 3 5 7 v ce (sat) -- i c i b =0 --0.2ma --0.4ma --0.6ma --0.8ma --1.0ma --2.0ma i c / i b =20 v ce = --2v ta=75 c 25 c --25 c ta=75 c --25 c --1.8ma --1.6ma --1.4ma --1.2ma 25 c collector-to-emitter voltage, v ce -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv --100 --200 --300 --400 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 v ce = --2v ta=75 c 25 c --25 c [tr] [tr] [tr] [tr] it04100 it04101 v be (sat) -- i c --1.0 --10 23 57 23 57 --100 23 5 3 --1000 2 3 5 7 --1.0 --10 23 57 23 57 --100 23 5 5 100 2 3 5 1000 7 7 f t -- i c i c / i b =20 v ce = --10v ta= --25 c 75 c 25 c collector current, i c -- ma collector current, i c -- ma gain-bandwidth product, f t -- mhz base-to-emitter saturation voltage, v be (sat) -- mv [tr] [tr] switching time test circuit v r r b v cc = --12v v be =5v + + 50 w input output r l 220 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --100ma pw=10 m s d.c. 1% p. g 50 w g s d i d =80ma r l =187.5 w v dd =15v v out MCH6937 v in 4v 0v v in
MCH6937 no.8040-4/6 it04102 1.0 cob -- v cb --0.1 --1.0 23 57 23 57 --10 23 5 10 2 3 5 7 f=1mhz output capacitance, cob -- pf collector-to-base voltage, v cb -- v p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c f=1mhz --0.1 5 ron -- i b it06066 3 2 10 7 5 3 2 7 1.0 5 3 2 57 3 2 57 --1.0 --10 out in 1k w 1k w i b base current, i b -- ma on-resistance, ron -- w [tr] [tr] [tr] 0 0 0.1 0.2 it06744 0.3 0.4 0.5 0.6 40 20 100 120 60 80 140 160 mounted on a ceramic board (600mm 2 5 0.8mm)1unit [fet] [fet] 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v it00029 i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- a i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- a 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v ta=--25 c 25 c 75 c it00030 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78910 ta=25 c 0.01 0.1 23 57 23 5 7 5 3 2 1.0 25 c --25 c ta=75 c it00031 it00032 v gs =4v i d =40ma 80ma [fet] [fet] static drain-to-source on-state resistance, r ds (on) -- w drain current, i d -- a r ds (on) -- v gs r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- w gate-to-source voltage, v gs -- v
MCH6937 no.8040-5/6 [fet] [fet] [fet] [fet] [fet] [fet] 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 5 3 2 7 5 3 2 --25 c 25 c ta=75 c 0.01 10 0.1 23 57 2 5 100 7 5 3 2 3 2 v dd =15v v gs =4v t d (on) t r t f t d (off) it00037 it00038 --60 1 --40 --20 2 020 3 40 60 4 5 6 7 80 100 120 140 160 i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v 5 0.01 0.1 23 57 23 5 0.1 7 5 3 2 7 it00035 it00036 0.01 0.1 23 57 23 5 10 1.0 7 5 3 2 v gs =2.5v 2 0.001 0.01 23 57 23 5 3 10 7 5 3 2 v gs =1.5v ta=75 c 25 c --25 c --25 c 25 c ta=75 c it00033 it00034 sw time -- i d i f -- v sd ? y fs ? -- i d r ds (on) -- ta r ds (on) -- i d r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- ambient temperature, ta -- c drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a ta=--25 c 25 c 75 c 02468101214161820 1.0 10 3 2 7 5 3 2 5 ciss coss crss f=1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =150ma it00039 it00040 [fet] [fet] v gs -- qg ciss, coss, crss -- v ds total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v ciss, coss, crss -- pf v ds =10v v gs =0
MCH6937 no.8040-6/6 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of january, 2005. specifications and information herein are subject to change without notice. ps [common] 0 20 40 60 100 120 140 0 80 0.5 0.55 0.6 0.4 0.3 0.2 0.1 160 ambient temperature, ta -- c p t -- ta total dissipation, p t -- w it07146 mounted on a ceramic board (600mm 2 5 0.8mm) p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w [fet] 0 20 40 60 100 120 140 0 80 0.5 0.6 0.4 0.3 0.2 0.1 160 it01118 mounted on a ceramic board (600mm 2 5 0.8mm)1unit note on usage : since the MCH6937 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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