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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 19 i d @ v gs = 12v, t c = 100c continuous drain current 12 i dm pulsed drain current 76 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 60 mj i ar avalanche current 19 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 8.6 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g c a www.irf.com 1 for footnotes refer to the last page pre-irradiation features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight international rectifiers r6 tm technology provides superior power mosfets for space applications.these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in todayshigh speed switching applications such as dc-dc converters and motor controllers. these devices retain all of the well established advantages of mosfets such as voltage control, ease of paralleling and temperature stability of electrical parameters. smd-0.5 irhnj67134 radiation hardened jansr2n7589u3power mosfet 150v, n-channel surface mount (smd-0.5) ref: mil-prf-19500/746 technology product summary part number radiation level r ds(on) i d qpl part number irhnj67134 100k rads (si) 0.088 ? 19a jansr2n7589u3 irhnj63134 300k rads (si) 0.088 ? 19a jansf2n7589u3 esd rating: class 2 per mil-std-750, method 1020 pd-96931c downloaded from: http:///
irhnj67134, jansr2n7589u3 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 19 i sm pulse source current (body diode) 76 v sd diode forward voltage 1.2 v t j = 25c, i s = 19a, v gs = 0v t rr reverse recovery time 350 ns t j = 25c, i f = 19a, di/dt 100a/ s q rr reverse recovery charge 2.5 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 150 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.18 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.088 ? v gs = 12v, i d = 12a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma ? v gs(th) / ? t j gate threshold voltage coefficient -9.42 mv/c g fs forward transconductance 13 s v ds = 15v, i ds = 12a i dss zero gate voltage drain current 10 v ds = 120v ,v gs =0v 2 5 v ds = 120v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = 19a q gs gate-to-source charge 15 nc v ds = 75v q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 25 v dd = 75v, i d = 19a, t r rise time 30 v gs = 12v, r g = 7.5 ? t d (off) turn-off delay time 60 t f fall time 30 l s + l d total inductance 4.0 ciss input capacitance 1570 v gs = 0v, v ds = 25v c oss output capacitance 240 p f f = 1.0mhz c rss reverse transfer capacitance 5.2 na nh ns a measured from the center of drain pad to center of source pad r g gate resistance 1.08 ? f = 1.0mhz, open drain thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.67 c/w downloaded from: http:///
www.irf.com 3 pre-irradiation irhnj67134, jansr2n7589u3 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 150 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds = 120v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) 0.092 ? v gs = 12v, i d = 12a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 19a resistance (smd-0.5) 0.088 ? v gs = 12v, i d = 12a 1. part numbers irhnj67134 (jansr2n7589u3) and irhnj63134 (jansf2n7589u3) 0 25 50 75 100 125 150 175 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=39 5% let=61 5% let=90 5% table 2. typical single event effect safe operating area let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= 0v -5v -10v -15v -20v 39 5% 410 5% 50 5% 150 150 150 150 150 61 5% 825 5% 66 7.5% 150 150 150 40 - 90 5% 1470 5% 80 5% 50 50 30 - - downloaded from: http:///
irhnj67134, jansr2n7589u3 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 567891 0 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 19a downloaded from: http:///
www.irf.com 5 pre-irradiation irhnj67134, jansr2n7589u3 fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 8. typical threshold voltage vs temperature fig 7. typical drain-to-source breakdown voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 150 160 170 180 190 200 210 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma 0 20 40 60 80 i d , drain current (a) 0 40 80 120 160 200 240 280 320 360 400 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 150c v gs = 12v 4 8 12 16 20 24 v gs, gate -to -source voltage (v) 0 40 80 120 160 200 240 280 320 360 400 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 19a t j = 25c t j = 150c downloaded from: http:///
irhnj67134, jansr2n7589u3 pre-irradiation 6 www.irf.com fig 12. maximum drain current vs. case temperature 100khz fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 2800 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1 02 03 04 05 06 0 q g, total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v v ds = 30v i d = 19a for test circuit see figure 13 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 t c , case temperature (c) 0 4 8 12 16 20 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///
www.irf.com 7 pre-irradiation irhnj67134, jansr2n7589u3 fig 15. maximum effective transient thermal impedance, junction-to-case fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.5a 12a bottom 19a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc downloaded from: http:///
irhnj67134, jansr2n7589u3 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
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0.1 % + - downloaded from: http:///
www.irf.com 9 pre-irradiation irhnj67134, jansr2n7589u3 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 120 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l = 0.33mh peak i l = 19a, v gs = 12v i sd 19a, di/dt 673a/ s, v dd 150v, t j 150c footnotes: case outline and dimensions smd-0.5 1 = drain 2 = gate 3 = source pad assignments ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 08/2013 downloaded from: http:///

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