production specification npn epitaxial transistor 2SC1766 e049 www.gmicroelec.com rev.a 1 features z small flat package. z low saturation voltage v ce(sat) =-0.5v z high speed switching time z pc=1.0 to 2.0w z high saturation current capability applications z power amplifier sot-89 ordering information type no. marking package code 2SC1766 p1766/q1766/y1766 sot-89 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a i cm peak collector current 2 a i bm peak base current 0.4 a p d total power dissipation 1000 mw t j, t stg junction and storage temperature -55 to +150 pb lead-free
production specification npn epitaxial transistor 2SC1766 e049 www.gmicroelec.com rev.a 2 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a v ce =2v,i c =500ma 82 390 dc current gain h fe v ce =2v,i c =2a 20 collector-emitter saturation voltage v ce(sat) i c =1a, i b =50ma 0.5 v base-emitter saturation voltage v be(sat) i c =1a, i b =50ma 1.2 mv transition frequency f t v ce =2v,i c =0.5a f=100mhz 120 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 40 pf classification of h fe rank p q y range 82-180 120-270 180-390 marking p1766 q1766 y1766 typical characteristics @ ta=25 unless otherwise specified
production specification npn epitaxial transistor 2SC1766 e049 www.gmicroelec.com rev.a 3 package outline plastic surface mounted package sot-89 soldering footprint unit:mm package information sot-89 dim min max a 4.30 4.70 b 2.25 2.65 c 1.50 typical d 0.40 typical e 1.40 1.60 f 0.48 typical h 1.60 1.80 j 0.40 typical l 0.90 1.10 k 3.95 4.35 all dimensions in mm device package shipping 2SC1766 sot-89 1000/tape&reel b k c d e j f a h l 4 5 4 5 1.00 1.50 1.50 0.90 2.20 0.90 1.00 1.50
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