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| igbt highspeedduopack:igbtintrenchandfieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW40N120H3 1200vhighspeedswitchingseriesthirdgeneration datasheet industrialpowercontrol
2 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 highspeedduopack:igbtintrenchandfieldstoptechnologywithsoft,fast recoveryanti-paralleldiode features: trenchstop tm technologyoffering ?verylowv cesat ?lowemi ?verysoft,fastrecoveryanti-paralleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?uninterruptiblepowersupplies ?weldingconverters ?converterswithhighswitchingfrequency keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKW40N120H3 1200v 40a 2.05v 175c k40h1203 pg-to247-3 g c e g c e 3 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 g c e g c e 4 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emitter voltage v ce 1200 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 80.0 40.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 160.0 a turnoffsafeoperatingarea v ce 1200v, t vj 175c - 160.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 40.0 20.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 160.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 600v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =175c t sc 10 s powerdissipation t c =25c powerdissipation t c =100c p tot 483.0 220.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.31 k/w diode thermal resistance, junction - case r th(j-c) 1.11 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e 5 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 1200 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =40.0a t vj =25c t vj =125c t vj =175c - - - 2.05 2.50 2.70 2.40 - - v diode forward voltage v f v ge =0v, i f =20.0a t vj =25c t vj =175c - - 1.80 1.85 2.35 - v diode forward voltage v f v ge =0v, i f =40.0a t vj =25c t vj =125c t vj =175c - - - 2.40 2.60 2.60 3.05 - - v gate-emitter threshold voltage v ge(th) i c =1.00ma, v ce = v ge 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t vj =25c t vj =175c - - - - 250.0 2500.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 600 na transconductance g fs v ce =20v, i c =15.0a - 20.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 2330 - output capacitance c oes - 185 - reverse transfer capacitance c res - 130 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =960v, i c =40.0a, v ge =15v - 185.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 600v, t sc 10s t vj =175c - 139 - a g c e g c e 6 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 30 - ns rise time t r - 57 - ns turn-off delay time t d(off) - 290 - ns fall time t f - 16 - ns turn-on energy e on - 3.20 - mj turn-off energy e off - 1.20 - mj total switching energy e ts - 4.40 - mj t vj =25c, v cc =600v, i c =40.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =70nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 355 - ns diode reverse recovery charge q rr - 1.90 - c diode peak reverse recovery current i rrm - 12.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -150 - a/s t vj =25c, v r =600v, i f =40.0a, di f /dt =500a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 29 - ns rise time t r - 49 - ns turn-off delay time t d(off) - 366 - ns fall time t f - 48 - ns turn-on energy e on - 4.40 - mj turn-off energy e off - 2.60 - mj total switching energy e ts - 7.00 - mj t vj =175c, v cc =600v, i c =40.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =70nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 639 - ns diode reverse recovery charge q rr - 4.30 - c diode peak reverse recovery current i rrm - 16.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -105 - a/s t vj =175c, v r =600v, i f =40.0a, di f /dt =500a/s g c e g c e 7 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 figure 1. collectorcurrentasafunctionofswitching frequency ( t j 175c, d =0.5, v ce =600v, v ge =15/0v, r g =12 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 20 40 60 80 100 120 140 160 t c =80 t c =110 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 50s 100s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 100 200 300 400 500 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 20 40 60 80 g c e g c e 8 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 figure 5. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 8 0 20 40 60 80 100 120 140 160 180 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 5 10 15 0 50 100 150 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i c =20a i c =40a i c =80a g c e g c e 9 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =12 w ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 5 15 25 35 45 55 65 75 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, i c =40a,testcircuitinfig.e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 0 10 20 30 40 10 100 1000 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =600v, v ge =15/0v, i c =40a, r g =12 w ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 1000 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =1ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2 3 4 5 6 7 typ. min. max. g c e g c e 10 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =12 w ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 0 2 4 6 8 10 12 14 16 18 20 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, i c =40a,testcircuitinfig.e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 0 2 4 6 8 10 12 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =600v, v ge =15/0v, i c =40a, r g =12 w ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0 2 4 6 8 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =40a, r g =12 w ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 500 600 700 800 0 2 4 6 8 10 e off e on e ts g c e g c e 11 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 figure 17. typicalgatecharge ( i c =40a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 40 80 120 160 200 0 2 4 6 8 10 12 14 16 240v 960v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 600v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 12 14 16 18 50 100 150 200 250 300 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 600v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 12 14 16 18 20 0 10 20 30 40 50 g c e g c e 12 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 figure 21. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.06414 3.7e-4 2 0.074055 3.9e-3 3 0.162315 0.01916724 4 10.0e-3 0.3399433 figure 22. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.290775 2.7e-4 2 0.43377 2.6e-3 3 0.363015 0.01477471 4 0.02781 0.1784607 figure 23. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 200 400 600 800 1000 200 300 400 500 600 700 800 t j =25c, i f = 40a t j =175c, i f = 40a figure 24. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 200 400 600 800 1000 0 1 2 3 4 t j =25c, i f = 40a t j =175c, i f = 40a g c e g c e 13 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 figure 25. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 200 400 600 800 1000 6 8 10 12 14 16 18 20 22 t j =25c, i f = 40a t j =175c, i f = 40a figure 26. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 200 400 600 800 1000 -300 -250 -200 -150 -100 -50 0 t j =25c, i f = 40a t j =175c, i f = 40a figure 27. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 3 4 0 20 40 60 80 100 120 t j =25c t j =175c figure 28. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i f =10a i f =20a i f =40a g c e g c e 14 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 g c e g c e pg-to247-3 15 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 g c e g c e pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief di/dt di i,v figure a. figure b. figure c. figure e. figure d. i c (t) 16 IKW40N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-11-26 revisionhistory IKW40N120H3 revision:2014-11-26,rev.2.1 previous revision revision date subjects (major changes since last revision) 1.1 2009-12-03 - 1.2 2010-02-10 - 2.1 2014-11-26 final data sheet welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g c e pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief di/dt di i,v figure a. figure b. figure c. figure e. figure d. i c (t) |
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