61312 tkim/31412 tkim/22212pa tkim tc-00002682 no.8994-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 FW217A n-channel power mosfet 35v, 6a, 39m , dual soic8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-state resistance r ds (on)1=30m (typ.) ? 4.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 35 v gate-to-source voltage v gss 20 v drain current (dc) i d 6a drain current (pw 10s) i dp duty cycle 1% 6.5 a drain current (pw 10 s) i dp duty cycle 1% 24 a allowable power dissipation p d when mounted on ceramic substrate (2000mm 2 0.8mm) 1unit, pw 10s 1.8 w total dissipation p t when mounted on ceramic substrate (2000mm 2 0.8mm), pw 10s 2.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7072-001 ordering number : en8994b product & package information ? package : soic8 ? jeita, jedec : sc-87, sot-96 ? minimum packing quantity : 2,500 pcs./reel packing type : tl marking electrical connection fw217 lot no. a 8765 1234 4.9 0.22 6.0 3.9 1.375 14 5 8 0.445 1.27 0.715 0.375 1.55 0.175 0.254 (gage plane) 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 soic8 tl FW217A-tl-2w
FW217A no.8994-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 35 v zero-gate voltage drain current i dss v ds =35v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.7 2.6 v forward transfer admittance | yfs | v ds =10v, i d =6a 3 s static drain-to-source on-state resistance r ds (on)1 i d =6a, v gs =10v 30 39 m r ds (on)2 i d =3a, v gs =4.5v 50 70 m input capacitance ciss v ds =20v, f=1mhz 470 pf output capacitance coss 70 pf reverse transfer capacitance crss 35 pf turn-on delay time t d (on) see speci ed test circuit. 8ns rise time t r 34 ns turn-off delay time t d (off) 31 ns fall time t f 30 ns total gate charge qg v ds =20v, v gs =10v, i d =6a 10 nc gate-to-source charge qgs 2nc gate-to-drain ?miller? charge qgd 2nc diode forward voltage v sd i s =6a, v gs =0v 0.84 1.2 v switching time test circuit ordering information device package shipping memo FW217A-tl-2w soic8 2,500pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =6a r l =3 v dd =20v v out v in 10v 0v v in FW217A
FW217A no.8994-3/7 it16778 it16779 05 0 0 6 2 1 4 3 5 1.0 0.2 0.3 0.4 0.1 0.5 0.6 0.7 0.8 0.9 0 10 4 123 6 1 2 3 8 4 7 9 5 10.0v 3.5v v gs =2.5v -- 2 5 c 25 c ta= 75 c v ds =10v 16.0v 4.5v 6.0v 3.0v 4.0v i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs i s -- v sd diode forward voltage, v sd -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a 0 5 10 7 5 3 2 100 1000 7 3 2 35 25 30 15 520 10 it16785 it16784 it16783 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 7 5 3 2 2 1.0 7 5 3 2 it16784 25 c --25 c f=1mhz ciss coss crss ta=75 c 0.01 0.1 2 23 57 1.0 2 357 2 3 5 7 2 0.1 1.0 3 5 7 10 v ds =10v ta= --25 c 75 c v gs =0v 10 1.0 3 3 2 2 5 7 100 5 7 0.1 1.0 2 23 57 10 357 v dd =20v t d (off) t f t d (on) t r it16780 it16781 0 0 100 16 2610 4 8 12 14 --60 --40 --20 0 20 40 60 80 100 120 140 160 40 80 60 20 0 100 60 80 40 20 v gs =4.5v, i d =3.0a ta=25 c i d =3a v gs =10.0v, i d =6.0a 6a 10 357 25 c 10 7 5 3
FW217A no.8994-4/7 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a it16786 0 0 1 2 3 4 5 6 7 10 8 10 8 9 46 2 it16787 v ds =10v i d =4.5a 0.01 0.1 1.0 10 23 57 23 57 23 57 23 5 100 7 0.01 0.1 1.0 10 100 7 5 7 5 3 2 7 5 3 2 7 5 3 2 3 2 i d =6a 100ms 1ms 10ms 100 s operation in this area is limited by r ds (on). dc operation i dp =24a(pw 10 s) 10s ta=25 c single pulse 1unit when mounted on ceramic substrate (2000mm 2 0.8mm) it16790 it16789 0 25 50 75 100 125 150 175 0 0.6 0.2 0.4 0.8 1.0 1.4 1.2 2.2 2.0 1.6 1.8 2.4 0 0 0.4 0.8 0.2 0.6 0.4 1.2 1.0 1.2 1.0 0.8 0.2 0.6 1.4 1.8 1.6 1.4 1.8 1.6 2.4 2.2 2.0 2.4 2.2 2.0 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 1unit when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s total dissipation allowable power dissipation(fet2), p d -- w p d (fet1) -- p d (fet2) allowable power dissipation(fet1), p d -- w when mounted on ceramic substrate (2000mm 2 0.8mm) , pw 10s taping speci cation FW217A-tl-2w 3 d f n l q j ) r u p d w 0 d [ l p x p 1 x p e h u r i g h y l f h v f r q w d l q h g s f v 3 d f n l q j i r u p d w 3 d f n d j h 1 d p h & |