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20 12 -0 4 - 04 page 1 rev. 2. 1 bso 612 cv g sipmos small-signal-transistor product summary n p drain source voltage v ds 60 -60 v drain-source on-state resistance r ds(on) 0.12 0.3 w continuous drain current i d 3 -2 a features dual n- and p -channel enhancement mode avalanche rated pb-free lead plating;rohs compliant type package marking bso 612 cv pg-d so - 8 612cv maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit n p continuous drain current t a = 25 c t a = 70 c i d 3 2.4 -2 -1.6 a pulsed drain current t a = 25 c i d puls 12 -8 avalanche energy, single pulse i d = 3 a, v dd = 25 v, r gs = 25 w i d = -2 a, v dd = -25 v, r gs = 25 w e as 47 - - 70 mj avalanche energy, periodic limited by t jmax e ar 0.2 0.2 reverse diode d v /d t, t jmax = 150 c i s = 3 a, v ds = 48 v, d i /d t = 200 a/s i s = -2 a, v ds = -48 v, d i /d t = -200 a/s d v /d t 6 - - 6 kv/s gate source voltage v gs 20 20 v power dissipation t a = 25 c p tot 2 2 w operating and storage temperature t j , t stg -55...+150 c iec climatic category; din iec 68-1 55/150/56
20 12 -0 4 - 04 page 2 rev. 2. 1 bso 612 cv g termal characteristics parameter symbol values uni t min. typ. max. dynamic characteristics thermal resistance, junction - soldering point ( pin 4) n p r thjs - - - - 40 40 k/ w smd version, device on pcb: @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. n n p p r thja - - - - - - - - 110 62.5 70 62.5 static characteristics , at t j = 25 c, unless otherwise specified drain- source breakdown voltage v gs = 0 v, i d = 250 a v gs = 0 v, i d = -250 a n p v (br)ds s 60 -60 - - - - v gate threshold voltage, v gs = v ds i d = 20 a i d = -450 a n p v gs(th) 2.1 -2.1 3 -3 4 -4 zero gate voltage drain current v ds = 60 v, v gs = 0 v, t j = 25 c v ds = 60 v, v gs = 0 v, t j = 125 c v ds = -60 v, v gs = 0 v, t j = 25 c v ds = -60 v, v gs = 0 v, t j = 125 c n n p p i dss - - - - 0.1 10 -0.1 -10 1 100 -1 -100 a gate-source leakage current v gs = 20 v, v ds = 0 v v gs = -20 v, v ds = 0 v n p i gss - - 10 -10 100 -100 na drain-source on-state resistance v gs = 10 v, i d = 3 a v gs = -10 v , i d = -2 a n p r ds(on) - - 0.09 0.22 0.12 0.3 w 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
20 12 -0 4 - 04 page 3 rev. 2. 1 bso 612 cv g electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values uni t min. typ. max. characteristics transconductance v ds 3 2 * i d * r ds(on)max , i d = 3 a vv ds 3 2 * i d * r ds(on)max , i d = -2 a n p g fs 2 1.2 4 2.4 - - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz v gs = 0 v, v ds = -25 v, f = 1 mhz n p c iss - - 275 320 340 400 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz v gs = 0 v, v ds = -25 v, f = 1 mhz n p c oss - - 90 105 115 130 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz v gs = 0 v, v ds = -25 v, f = 1 mhz n p c rss - - 50 40 65 50 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 3 a , r g = 33 w v dd = -30 v, v gs = -10 v, i d = -2 a , r g = 27 w n p t d(on) - - 12 15 18 23 ns rise time v dd = 30 v, v gs = 10 v, i d = 3 a, r g = 33 w v dd = -30 v, v gs = -10 v, i d = -2 a, r g = 27 w n p t r - - 35 60 55 90 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 3 a , r g = 33 w v dd = -30 v, v gs = -10 v, i d = -2 a , r g = 27 w n p t d(off) - - 25 145 40 220 fall time v dd = 30 v, v gs = 10 v, i d = 3 a , r g = 33 w v dd = -30 v, v gs = -10 v, i d = -2 a , r g = 27 w n p t f - - 30 95 45 140
20 12 -0 4 - 04 page 4 rev. 2. 1 bso 612 cv g electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. characteristics gate to source charge v dd = 48 v, i d = 3 a v dd = -48 v, i d = -2 a n p q gs - - 1 2 1.5 3 nc gate to drain charge v dd = 48 v, i d = 3 a v dd = -48 v, i d = -2 a n p q gd - - 5.5 4.5 8.3 6.8 gate charge total v dd = 48 v, i d = 3 a, v gs = 0 to 10v v dd = -48 v, i d = -2 a, v gs = 0 to -10v n p q g - - 10.3 10.5 15.5 16 gate plateau voltage v dd = 48 v, i d = 3 a v dd = -48 v, i d = -2 a n p v (plateau) - - 5 -4 - - v reverse diode inverse diode continuous forward current t a = 25 c n p i s - - - - 3 -2 a inverse diode direct current,pulsed t a = 25 c n p i sm - - - - 12 -8 inverse diode forward voltage v gs = 0 v, i f = i s v gs = 0 v, i f = i s n p v sd - - 0.9 -0.9 1.2 -1.2 v reverse recovery time v r = 30 v, i f = l s , d i f /d t = 100 a/s v r = -30 v, i f = l s , d i f /d t = -100 a/s n p t rr - - 55 55 85 85 ns reverse recovery charge v r = 30 v, i f = l s , d i f /d t = 100 a/s v r = -30 v, i f = l s , d i f /d t = -100 a/s n p q rr - - 90 65 135 100 nc
20 12 -0 4 - 04 page 5 rev. 2. 1 bso 612 cv g power dissipation (p-ch.) p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 w 2.2 bso 612 cv p tot power dissipation (n-ch.) p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 w 2.2 bso 612 cv p tot drain current (n-ch.) i d = f ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t a 0.0 0.4 0.8 1.2 1.6 2.0 2.4 a 3.2 bso 612 cv i d drain current (p-ch.) i d = f ( t a ) parameter: v gs 3 -10 v 0 20 40 60 80 100 120 c 160 t a 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 a -2.2 bso 612 cv i d
20 12 -0 4 - 04 page 6 rev. 2. 1 bso 612 cv g safe operating area (n-ch.) i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 -1 10 0 10 1 10 2 v v ds -2 10 -1 10 0 10 1 10 2 10 a bso 612 cv i d r d s ( on) = v d s / i d dc 10 ms 1 ms 100 s t p = 45.0 s safe operating area (p-ch.) i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 -10 -1 -10 0 -10 1 -10 a bso 612 cv i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 200.0 s transient thermal impedance (n-ch.) z thjc = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bso 612 cv z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 transient thermal impedance (p-ch.) z thjc = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bso 612 cv z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
20 12 -0 4 - 04 page 7 rev. 2. 1 bso 612 cv g typ. output characteristics (n-ch.) i d = f ( v ds ) parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 a 7.5 bso 612 cv i d v gs [v] a a 4.0 b b 4.2 c c 4.5 d d 4.7 e e 5.0 f f 5.2 g g 5.5 h h 5.7 i p tot = 2.00 w i 6.0 typ. output characteristics (p-ch.) i d = f ( v ds ) parameter: t p = 80 s 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v ds 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 a -5.0 bso 612 cv i d v gs [v] a a -4.0 b b -4.2 c c -4.5 d d -4.7 e e -5.0 f p tot = 2.00 w f -6.0 typ. drain-source-on-resistance (n-ch.) r ds(on) = f ( i d ) parameter: v gs 0.0 1.0 2.0 3.0 4.0 5.0 a 6.5 i d 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 w 0.38 bso 612 cv r ds(on) b v gs [v] = b 4.2 c c 4.5 d d 4.7 e e 5.0 f f 5.2 g g 5.5 h h 5.7 i i 6.0 typ. drain-source-on-resistance (p-ch.) r ds(on) = f ( i d ) parameter: v gs 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 c -5.0 t j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 w 1.0 bso 612 cv r ds(on) a v gs [v] = a -4.0 b b -4.2 c c -4.5 d d -4.7 e e -5.0 f f -6.0
20 12 -0 4 - 04 page 8 rev. 2. 1 bso 612 cv g typ. transfer characteristics (n-ch.) parameter: t p = 80 s i d = f ( v gs ), v ds 3 2 x i d x r ds(on)max 0 1 2 3 4 5 v gs 7 v 0 1 2 3 4 5 6 7 8 a 10 i d typ. transfer characteristics (p-ch.) parameter: t p = 80 s i d = f ( v gs ), v ds 3 2 x i d x r ds(on)max 0.0 1.0 2.0 3.0 4.0 v gs 6.0 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 a 5.0 i d typ. forward transconductance (n-ch.) g fs = f( i d ); t j = 25 c parameter: g fs 0 1 2 3 4 5 6 7 8 a 10 i d 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 s 7.0 g fs typ. forward transconductance (p-ch.) g fs = f( i d ); t j = 25 c parameter: g fs 0.0 -1.0 -2.0 -3.0 -4.0 a -6.0 i d 0.0 0.5 1.0 1.5 2.0 2.5 3.0 s 4.0 g fs
20 12 -0 4 - 04 page 9 rev. 2. 1 bso 612 cv g drain-source on-resistance (n-ch.) r ds(on) = f ( t j ) parameter : i d = 3 a , v gs = 10 v -60 -20 20 60 100 c 180 t j 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 w 0.34 bso 612 cv r ds(on) typ 98% drain-source on-resistance (p-ch.) r ds(on) = f ( t j ) parameter : i d = -2 a , v gs = -10 v -60 -20 20 60 100 c 180 t j 0.00 0.10 0.20 0.30 0.40 0.50 0.60 w 0.80 bso 612 cv r ds(on) typ 98% gate threshold voltage (n-ch.) v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 20 a -60 -20 20 60 100 c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs(th) 2% -60 -20 20 60 100 c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs(th) typ -60 -20 20 60 100 c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs(th) 98% -60 -20 20 60 100 c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs(th) gate threshold voltage (p-ch.) v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -450 a -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 2% -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) typ -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th) 98% -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v gs(th)
20 12 -0 4 - 04 page 10 rev. 2. 1 bso 612 cv g typ. capacitances (n-ch.) c = f( v ds ) parameter: v gs =0 v, f =1 mhz 0 5 10 15 20 25 v ds 35 v 1 10 2 10 3 10 pf c c iss c oss c rss typ. capacitances (p-ch.) c = f( v ds ) parameter: v gs =0 v, f =1 mhz 0 -5 -10 -15 -20 -25 v ds -35 v 1 10 2 10 3 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ), (n-ch.) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -2 10 -1 10 0 10 1 10 a bso 612 cv i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) forward characteristics of reverse diode i f = f ( v sd ), (p-ch.) parameter: t j , t p = 80 s 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd -2 -10 -1 -10 0 -10 1 -10 a bso 612 cv i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
20 12 -0 4 - 04 page 11 rev. 2. 1 bso 612 cv g avalanche energy e as = f ( t j ) (n-ch.) parameter: i d = 3 a, v dd = 25 v r gs = 25 w 25 45 65 85 105 125 c 165 t j 0 5 10 15 20 25 30 35 40 mj 50 e as avalanche energy e as = f ( t j ) parameter: i d = -2 a, v dd = -25 v r gs = 25 w 25 45 65 85 105 125 c 165 t j 0 10 20 30 40 50 60 mj 80 e as typ. gate charge (n-ch.) v gs = f ( q gate ) parameter: i d = 3 a 0 2 4 6 8 nc 12 q gate 0 2 4 6 8 10 12 v 16 bso 612 cv v gs ds max v 0,8 ds max v 0,2 typ. gate charge (p-ch.) v gs = f ( q gate ) parameter: i d = -2 a 0 2 4 6 8 10 12 14 16 nc 19 q gate 0 -2 -4 -6 -8 -10 -12 v -16 bso 612 cv v gs ds max v 0,8 ds max v 0,2
20 12 -0 4 - 04 page 12 rev. 2. 1 bso 612 cv g drain-source breakdown voltage v (br)dss = f ( t j ), (n-ch.) -60 -20 20 60 100 c 180 t j 54 56 58 60 62 64 66 68 v 72 bso 612 cv v (br)dss drain-source breakdown voltage v (br)dss = f ( t j ), (p-ch.) -60 -20 20 60 100 c 180 t j -54 -56 -58 -60 -62 -64 -66 -68 v -72 bso 612 cv v (br)dss
20 12 -0 4 - 04 page 13 rev. 2. 1 bso 612 cv g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.co m ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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