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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB995 description collector-emitter breakdown voltage- : v (br)ceo = -100v(min) low collector saturation voltage- : v ce(sat) = -2.0v(max)@ i c = -4a complement to type 2sd1355 applications power amplifier applications. recommended for 30w high-fidelity audio frequency amplifier output stage. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -5 a i b base current-continuous -0.5 a p c collector power dissipation @t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB995 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma; i b = 0 -100 v v ce (sat) collector-emitter saturation voltage i c = -4a; i b = -0.4a b -2.0 v v be (on) base-emitter on voltage i c = -4a; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -100v; i e = 0 -100 a i ebo emitter cutoff current v eb = -5v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -1a; v ce = -5v 40 240 h fe-2 dc current gain i c = -4a; v ce = -5v 20 c ob output capacitance i e = 0; v cb = -10v; f test = 1mhz 270 pf f t current-gain?bandwidth product i c = -1a; v ce = -5v 5 mhz ? h fe- 1 classifications r o y 40-80 70-140 120-240 isc website www.iscsemi.cn 2 |
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