inchange semiconductor isc product specification isc silicon pnp power transistor 2SB992 description collector-emitter breakdown voltage- : v (br)ceo = -80v(min) collector power dissipation- : p c = 40w@ t c = 25 low collector saturation voltage- : v ce(sat) = -0.5v(max)@ i c = -4a complement to type 2sd1362 applications high current switching applications. power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current-continuous -7 a i b base current-continuous -1 a collector power dissipation @t a =25 1.5 p c collector power dissipation @t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB992 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma; i b = 0 -80 v v ce (sat) collector-emitter saturation voltage i c = -4a; i b = -0.4a b -0.5 v v be (sat) base-emitter saturation voltage i c = -4a; i b = -0.4a b -1.4 v i cbo collector cutoff current v cb = -100v ; i e = 0 -5 a i ebo emitter cutoff current v eb = -5v; i c = 0 -5 a h fe-1 dc current gain i c = -1a; v ce = -1v 70 240 h fe-2 dc current gain i c = -4a; v ce = -1v 30 c ob output capacitance i e = 0; v cb = -10v; f test = 1mhz 250 pf f t current-gain?bandwidth product i c = -1a; v ce = -4v 10 mhz switching times t on turn-on time 0.4 s t stg storage time 2.5 s t f fall time v cc = -30v, r l = 10 , i b1 = -i b2 = -0.3a, 0.5 s ? h fe- 1 classifications o y 70-140 120-240 isc website www.iscsemi.cn 2
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